Power Management & Multimarket
BGSA11GN10
Low RON Dual Single Pole Single Throw Antenna Tuning Switch
Data Sheet
Revision 0.3 - 2015-08-04
Edition 2015-08-04
Published by
Infineon Technologies AG
81726 Munich, Germany
c
2012 Infineon Technologies AG
All Rights Reserved.
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BGSA11GN10
Revision History
Document No.: BGSA11GN10.pdf
Revision History: 0.3
Previous Version: 0.2
Page Subjects (major changes since last revision)
7 updated min frequency
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Last Trademarks Update 2012-12-13
Data Sheet 3 Revision 0.3 - 2015-08-04
BGSA11GN10
Contents
Contents
1 Features 6
2 Product Description 6
3 Maximum Ratings 7
4 Operation Ranges 8
5 Logic Table 8
6 RF small signal parameter 9
7 RF large signal parameter 10
8 Package Outline and Pin Configuration 12
9 Application Examples 16
9.1 SingleSPSTshuntoperation ......................................... 16
9.2 Low RON SPSTshuntoperation........................................ 17
9.3 DualSPSTforRFtuning............................................ 17
List of Figures
1 BGSA11GN10blockdiagram ......................................... 7
2 Pinout(topview) ................................................ 12
3 PackageDimensionsDrawing......................................... 13
4 Landpatternandstencilmask ........................................ 13
5 Tapedrawing .................................................. 14
6 Package marking: Date code digits Y and W are found in Table 13/14 . . . . . . . . . . . . . . . . . . 14
7 BGSA11GN10 realizable circuit configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8 BGSA11GN10 single SPST shunt configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9 BGSA11GN10 low RON SPSTshuntconfiguration ............................. 17
10 BGSA11GN10 as shunt capacitance tuning device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
11 BGSA11GN10 as shunt inductance tuning device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Data Sheet 4 Revision 0.3 - 2015-08-04
BGSA11GN10
List of Tables
List of Tables
1 OrderingInformation.............................................. 6
2 MaximumRatings,TableI........................................... 7
3 MaximumRatings,TableII........................................... 8
4 OperationRanges ............................................... 8
5 LogicTable ................................................... 8
6 RFsmallsignalspecifications......................................... 9
7 RFlargesignalSpecifications......................................... 10
8 LogicTable ................................................... 10
9 LogicTable ................................................... 10
10 LogicTable ................................................... 11
11 Pindescription ................................................. 12
12 Mechanicaldata ................................................ 12
13 OperationRanges ............................................... 14
14 OperationRanges ............................................... 15
15 LogicTable ................................................... 18
16 LogicTable ................................................... 18
Data Sheet 5 Revision 0.3 - 2015-08-04
BGSA11GN10
BGSA11GN10 Low RON Dual Single Pole Single Throw Antenna Tuning
Switch
1 Features
•high-linearity Dual SPST for antenna aperture switching appli-
cations
•Ultra-Low RON of 0.79 Ωin ON state for each SPST, 0.38 Ω
using both SPST in parallel
•Ultra-Low COFF of 250 fF in OFF state
•High max RF voltage OFF state handling: 36 V peak (72 Vp−p)
•Low harmonic generation
•No power supply blocking required
•Supply voltage: 1.8 to 3.6 V
•Control voltage: 1.35 to 3.3 V (control high)
•Suitable for EDGE / C2K / LTE / WCDMA Applications
•0.1 to 5.0 GHz coverage
•Small form factor 1.1 mm x 1.5 mm
•400 µm pad pitch
•RoHS and WEEE compliant package
2 Product Description
The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna aperture switch optimized for low Ron
enabling applications up to 5.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple,
single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch maximum
input power level, resulting in linear performance at all signal levels. Unlike GaAs technology, the 0.1 dB compression
point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external
DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF
voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching
circuits without significant losses in quality factors.
Table 1: Ordering Information
Type Package Marking Chip
BGSA11GN10 TSNP10-1 11 BGSA11GN10
Data Sheet 6 Revision 0.3 - 2015-08-04
BGSA11GN10
RF1
RFC
VDD
CTRL2
RF2
Voltage
Regulator
Chargepump
GND
Driver
ESD
CTRL1 Driver
Figure 1: BGSA11GN10 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Frequency Range f0.1 – – GHz 1)
Supply voltage 2) VDD -0.5 – 3.6 V –
Storage temperature range TSTG -55 – 150 ◦C –
RF input power PRF _TRx – – 39 dBm 25 % Duty Cycle
ESD capability, CDM 2) VESDCDM -1.5 – +1.5 kV
ESD capability, HBM 4) VESDHBM -1 – +1 kV
ESD capability, system level (RFC
port) 5)
VESDANT -8 – +8 kV RFC vs system GND, with
27 nH shunt inductor
Junction temperature Tj– – 125 ◦C –
1) Switch has a low pass response. The DC voltage at RF ports VRFDC has to be 0V.
2) Note: Consider any ripple voltages on top of VDD . A high RF ripple at the VDD can exceed the maximum ratings by VDD =VDC +VRipple.
3) Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R= 1.5 kΩ,C= 100 pF).
5) IEC 61000-4-2 (R= 330 Ω,C= 150 pF), contact discharge.
Data Sheet 7 Revision 0.3 - 2015-08-04
BGSA11GN10
Table 3: Maximum Ratings, Table II at TA= 25 ◦C, unless otherwise specified
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum DC-voltage on RF-Ports
and RF-Ground
VRFDC 0 – 0 V No DC voltages allowed on
RF-Ports
Control Voltage Levels VCTRL -0.7 – 3.3 V –
4 Operation Ranges
Table 4: Operation Ranges
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VDD 1.8 2.85 3.6 V –
Supply current1) IDD – 80 150 µA–
Control voltage low VCtrl,low 0 0.45 V –
Control voltage high VCtrl,high 1.2 1.8 2.85 V VCtrl,high VDD
Control current low ICtrl,low -1 0 1 µA–
Control current high ICtrl,high -1 0 1 µA VCtrl,high VDD
Ambient temperature TA-30 25 85 ◦C –
RF switching time tsw 2 5 7 µs–
Startup time tsw 20 30 µs–
1)TA= -30 ◦C−+85 ◦C, VVDD = 1.8 −3.6 V
5 Logic Table
Table 5: Logic Table
CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc
0 0 OFF OFF
0 1 OFF ON
1 0 ON OFF
1 1 ON ON
1), CTRL1 and CTRL 2 can be connected together to control both switches at once. This enables the use of both SPSTs to reduce Ron by
parallel switching.
Data Sheet 8 Revision 0.3 - 2015-08-04
BGSA11GN10
6 RF small signal parameter
Table 6: RF small signal specifications
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Frequency range f 0.1 – 5.0 GHz –
Switch ON resistance RON 0.7 0.79 0.89 ΩRFx to RFC
Switch OFF capacitance COFF – 250 – fF RFx to RFC
Parasitic RF shunt capaci-
tance
CSH,PAR – 42 – fF RFx to GND, extracted value
for 2 GHz
Switch series inductance LSER – 0.1 – nH –
Insertion Loss (1,2,3)
824 - 960 MHz
IL
0.10 0.19 0.28 dB VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω,
RF1 or RF2 switched to RFC
1710 - 1980 MHz 0.18 0.29 0.40 dB
1981 - 2169 MHz 0.25 0.33 0.40 dB
2170 - 2690 MHz 0.25 0.35 0.45 dB
Return Loss(1,2,3)
All Ports @ 824 - 915 MHz RL 25 28 36 dB VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω
All Ports @ 1710 - 2169 MHz 19 25 30 dB
All Ports @ 2170 - 2690 MHz 17 23 25 dB
Isolation RFx to RFC(1,2,3)
824 - 915 MHz
ISO
21 23 30 dB VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω
1710 - 1980 MHz 15 17 20 dB
1981 - 2169 MHz 14 16 20 dB
2170 - 2690 MHz 12 14 18 dB
Isolation RFx to RFx(1,2,3)
824 - 915 MHz
ISO
22 24 31 dB VDD = 1.8 −3.6 V,
TA= -30 ... +85 ◦C,
Z0= 50 Ω
1710 - 1980 MHz 26 18 21 dB
1981 - 2169 MHz 15 17 20 dB
2170 - 2690 MHz 13 14 19 dB
1) Valid for all RF power levels, no compression behavior
2) Network analyser input power: PIN =−20 dBm
3)On application board without any matching components
Data Sheet 9 Revision 0.3 - 2015-08-04
BGSA11GN10
7 RF large signal parameter
Table 7: RF large signal specifications
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
RF operating voltage VRF _peak – – 36 V
Harmonic Generation up to 12.75 GHz(1,2,3)
All RF Ports - Second Order Har-
monics
PH2– 105 – dBc 25 dBm, 50Ω,f0= 786 MHz
All RF Ports - Third Order Har-
monics
PH3– 115 – dBc 25 dBm, 50Ω,f0= 786 MHz
All RF Ports - Second Order Har-
monics
PH2– 98 – dBc 33 dBm, 50Ω,f0= 824 MHz
All RF Ports - Third Order Har-
monics
PH3– 110 – dBc 33 dBm, 50Ω,f0= 824 MHz
All RF Ports PHx 105 – – dBc 25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low IIP2,l – 110 – dBm IIP2 conditions table 8
IIP2, high IIP2,h – 120 – dBm
Intermodulation Distortion IMD3 (1,2,3)
IIP3 IIP3 – 75 – dBm IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE IIP3,SV – 75 – dBm SV-LTE conditions table 10
1)Terminating Port Impedance: Z0= 50 Ω2)Supply Voltage: VDD = 1.8 −3.6 V3)On application board without any matching
components
Table 8: IIP2 conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 1 Low 2140 1950 20 190 -15
Band 1 High 2140 1950 20 4090 -15
Band 5 Low 881.5 836.5 20 45 -15
Band 5 High 881.5 836.5 20 1718 -15
Table 9: IIP3 conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 1 2140 1950 20 1760 -15
Band 5 881.5 836.5 20 791.5 -15
Data Sheet 10 Revision 0.3 - 2015-08-04
BGSA11GN10
Table 10: SV-LTE conditions table
Band In-Band Frequency Blocker Frequency 1 Blocker Power 1 Blocker Frequency 2 Blocker Power 2
[MHz] [MHz] [dBm] [MHz] [dBm]
Band 5 872 827 23 872 14
Band 13 747 786 23 747 14
Band 20 878 833 23 2544 14
Data Sheet 11 Revision 0.3 - 2015-08-04
BGSA11GN10
8 Package Outline and Pin Configuration
RFC
10
RF2
GND GND
VDD CTRL 2
RF1
1
2
3
4
9
8
7
6
5
CTRL 1
Figure 2: Pinout (top view)
Table 11: Pin Description
Pin No. Name Pin
Type
Buffer
Type
Function
1 N.C. N.C. Not connected
2 RF1 I/O RF1
3 GND GND Ground
4 VDD PWR Supply voltage
5 CTRL 1 I Control Pin
6 CTRL 2 I Control Pin
7 GND GND Ground
8 RF2 I/O RF2
9 N.C. N.C. Not connected
10 RFC I/O Common RF
Table 12: Mechanical Data
Parameter Symbol Value Unit
X-Dimension X1.1 ±0.05 mm
Y-Dimension Y1.5 ±0.05 mm
Size Size 1.65 mm2
Height H0.375 mm
Data Sheet 12 Revision 0.3 - 2015-08-04
BGSA11GN10
Top vIew Bottom view
Figure 3: Package Dimensions Drawing
TSNP-10-1-FP V01
Stencil apertures
Copper Solder mask
0.475
0.4
10x 0.25
10x 0.25
0.4
0.4
10x 0.25
0.2
0.4
0.4
0.4
0.475
Optional solder mask dam
Figure 4: Land pattern and stencil mask
Data Sheet 13 Revision 0.3 - 2015-08-04
BGSA11GN10
40.5
Pin 1
marking
1.3
1.7
8
TSNP-10-1-TP V01
Figure 5: Tape drawing
TSNP-10-1MK V02
Pin 1 marking
11
Type code
Date code (YW)
Figure 6: Package marking: Date code digits Y and W are found in Table 13/14
Table 13: Year date code marking - digit "Y"
Year "Y" Year "Y" Year "Y"
2000 0 2010 0 2020 0
2001 1 2011 1 2021 1
2002 2 2012 2 2022 2
2003 3 2013 3 2023 3
2004 4 2014 4 2024 4
2005 5 2015 5 2025 5
2006 6 2016 6 2026 6
2007 7 2017 7 2027 7
2008 8 2018 8 2028 8
2009 9 2019 9 2029 9
Data Sheet 14 Revision 0.3 - 2015-08-04
BGSA11GN10
Table 14: Week date code marking - digit "W"
Week "W" Week "W" Week "W" Week "W" Week "W"
1 A 12 N 23 4 34 h 45 v
2 B 13 P 24 5 35 j 46 x
3 C 14 Q 25 6 36 k 47 y
4 D 15 R 26 7 37 l 48 z
5 E 16 S 27 a 38 n 49 8
6 F 17 T 28 b 39 p 50 9
7 G 18 U 29 c 40 q 51 2
8 H 19 V 30 d 41 r 52 3
9 J 20 W 31 e 42 s
10 K 21 Y 32 f 43 t
11 L 22 Z 33 g 44 u
Data Sheet 15 Revision 0.3 - 2015-08-04
BGSA11GN10
9 Application Examples
The BGSA11GN10 is a dual single pole single throw (SPST) RF switch in a 1.05 mm x 1.55 mm TSNP-10-1 package. Both SPST
can be controlled individually by the control placed next to each other. This solution allows the use of the device for several
applications shown in Fig. 7:
•Low RON = 0.79ΩSPST (a) or ultra low RON = 0.38ΩSPST (b)
•Tuning with 2 reactive devices such as capacitors or inductors. (c)
•Combinations of above.
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
(a) Single SPST (b) 2 SPSTs parallel (c) 2 SPSTs for Tuning
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
C1 C2
Figure 7: BGSA11GN10 realizable circuit configurations
9.1 Single SPST shunt operation
The configuration (a) is used to obtain an RON = 0.79Ωand COFF = 250fF . It can be used for series and shunt configurations.
Note, that for single SPST shunt configuration, is is better to connect RFC to GND to avoid additional capacitance contribution of
the unused part RF2 to GND as shown in Fig. 8. For simplicity, connecting the unused RF and Control Pin can be connected to
ground.
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
RF1
GND GND
VDD CTRL 2
CTRL 1
1
2
3
4
9
8
7
6
5
10
Figure 8: BGSA11GN10 single SPST shunt configuration
Data Sheet 16 Revision 0.3 - 2015-08-04
BGSA11GN10
9.2 Low RON SPST shunt operation
9.2 Low RON SPST shunt operation
For lowest possible RON = 0.38Ωoperation, it is required to connect the logic inputs CTRL 1 with CTRL 2 together and same for
RF1 and RF2 as shown in Fig. 9
Figure 9: BGSA11GN10 low RON SPST shunt configuration
9.3 Dual SPST for RF tuning
The dual SPST can also be used for tuning applications, for example to tune capacitance or inductance. Fig. 10 shows as example
a tunable capacitance with 4 steps by using 2 external MLCC capacitors. Note that the RF voltage should not exceed the specified
36 V over the switch device and also not for the used capacitor.
RF1
GND GND
VDD CTRL 2
CTRL 1
1
2
3
4
9
8
7
6
5
10
RF2
RFC
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
C1 C2
C1 C2
Figure 10: BGSA11GN10 as shunt capacitance tuning device
For example, resulting capacitances using C1 and C2 can be controlled as shown in table 15. Resulting Q factors can be
calculated using the RON values using the equation Q=
1
ωC
RON with ω= 2πf. Same function can be realized also with inductors
(Fig. 11) with Q=ωL
RON in table 16.
Data Sheet 17 Revision 0.3 - 2015-08-04
BGSA11GN10
9.3 Dual SPST for RF tuning
RF1
VBATT
CTRL 1
RF2
CTRL 2
RFC
RF1
GND GND
VDD CTRL 2
CTRL 1
1
2
3
4
9
8
7
6
5
10
RF2
RFC
L1 L2
L1 L2
Figure 11: BGSA11GN10 as shunt inductance tuning device
Table 15: Logic Table
CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Capacitance RON
0 0 OFF OFF 500 fF 500 kΩ
0 1 OFF ON 250 fF + C2 0.79 Ω
1 0 ON OFF 250 fF + C1 0.79 Ω
1 1 ON ON C1 + C2 0.38 Ω
Table 16: Logic Table
CTRL 1 CTRL 2 Mode RF1 to RFc Mode RF2 to RFc Inductance RON
0 0 OFF OFF - 500 kΩ
0 1 OFF ON L2 0.79 Ω
1 0 ON OFF L1 0.79 Ω
1 1 ON ON L1 || L2 0.38 Ω
Data Sheet 18 Revision 0.3 - 2015-08-04
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