1N821UR-1 thru 1N829AUR-1 6.2 & 6.55 Volt ZENER REFERENCE DIODES Qualified per MIL-PRF-19500/159 Available on commercial versions *Qualified Levels: JAN, JANTX, JANTXV and JANS (available on some part numbers) DESCRIPTION The 1N821UR-1 thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005 %/oC for minimal voltage change with temperature when operated at 7.5 mA. These glass surface mount DO-213AA (MELF) reference diodes are optionally available with an internal-metallurgical-bond as well as RoHS compliant option for commercial applications. This type of bonded Zener package construction is also available in JAN, JANTX, and JANTXV military qualifications (RoHS compliant option not applicable). Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages up to 200 V. DO-213AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of JEDEC registered 1N821 thru 1N829. * * Lowered Zener impedance option available. Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options on commercial at lower voltage. (Excludes 1N826 and 1N828.) Temperature compensated. Internal metallurgical bond. Double plug construction. *JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/159 available on 1N821, 823, 825, 827 and 829. RoHS compliant versions available (commercial grade only). * * * * * Also available in: DO-35 (DO-204AH) (axial-leaded) 1N821 - 1N829 APPLICATIONS / BENEFITS * * * * * * * Provides minimal voltage changes over a broad temperature range. For instrumentation and other circuit designs requiring a stable voltage reference. Maximum temperature coefficient selections available from 0.01 %/C to 0.0005 %/C. Tight reference voltage tolerances available on commercial with center nominal value of 6.2 V by adding designated tolerance such as 1%, 2%, 3%, etc. after the part number for identification. (Excludes 1N826 and 1N828.) Small surface-mount footprint. Nonsensitive to ESD per MIL-STD-750 Method 1020. Typical low capacitance of 100 pF or less. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage temperature Power Dissipation (Note 1) Maximum Zener Current Solder Pad Temperatures at 10 s Symbol Value TJ and TSTG PD IZM TSP -55 to +175 Unit o C 500 mW 70 mA 260 o o C Notes: 1. @ TL = 25 C and maximum current IZM of 70 mA. For optimum voltage-temperature stability, IZ = 7.5 mA o o (less than 50 mW in dissipated power). Derate at 3.33 mW/ C above TA = +25 C. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0220-1, Rev. 1 (111514) (c)2011 Microsemi Corporation Page 1 of 6 1N821UR-1 thru 1N829AUR-1 MECHANICAL and PACKAGING * * * * * * * * CASE: Hermetically sealed glass case. DO-213AA package. TERMINALS: Leads, Tin-Lead (military) or RoHS compliant annealed matte Tin plating (commercial grade only) solderable per MIL-STD-750, Method 2026. MARKING: Cathode band (except double anode 1N822 and 1N824). POLARITY: Reference diode to be operated with the banded end positive with respect to the opposite end. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. TAPE & REEL option: Standard per EIA-481-B with 12 mm tape (add "TR" suffix to part number). Consult factory for quantities. WEIGHT: 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE Applicable to: JAN, JANTX, JANTXV and JANS 1N821, 1N823, 1N825, 1N827, and 1N829 only: JAN 1N821 UR -1 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial Metallurgical Bond Surface Mount Package JEDEC type number (see Electrical Characteristics table) Applicable to: commercial 1N821, 1N823, 1N825, 1N827, and 1N829 only: 1N821 A UR -1 -1% (e3) JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Zener Impedance A = 10 ohms Blank = 15 ohms Tighter voltage tolerance 1% 2% 3% Surface Mount Package Metallurgical Bond Continued on next page. T4-LDS-0220-1, Rev. 1 (111514) (c)2011 Microsemi Corporation Page 2 of 6 1N821UR-1 thru 1N829AUR-1 Applicable to: 1N822 and 1N824 only: 1N822 UR -1 -1% (e3) JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount Package Tighter voltage tolerance 1% 2% 3% Metallurgical Bond Applicable to: 1N826 and 1N828 only: 1N826 UR -1 (e3) JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount Package Metallurgical Bond SYMBOLS & DEFINITIONS Definition Symbol IR IZ, IZT, IZK VZ ZZT or ZZK Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK). Zener Voltage: The zener voltage the device will exhibit at a specified current (IZ) in its breakdown region. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of IZT or IZK) and superimposed on IZT or IZK respectively. T4-LDS-0220-1, Rev. 1 (111514) (c)2011 Microsemi Corporation Page 3 of 6 1N821UR-1 thru 1N829AUR-1 ELECTRICAL CHARACTERISTICS @ 25oC (unless otherwise specified) JEDEC TYPE NUMBER (Notes 1 & 5) 1N821UR 1N821AUR 1N822UR 1N823UR 1N823AUR 1N824UR 1N825UR 1N825AUR 1N826UR 1N827UR 1N827AUR 1N828UR 1N829UR 1N829AUR ZENER VOLTAGE VZ @ IZT (Note 1 and 4) ZENER TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE ZZT @ IZT (Note 2) MAXIMUM REVERSE CURRENT IR @ 3 V EFFECTIVE TEMPERATURE COEFFICIENT VZ A VOLTAGE TEMPERATURE STABILITY (VZT MAX) o o -55 C to +100 C (Note 3 and 4) mV Volts mA Ohms 5.89-6.51 5.89-6.51 5.9-6.5 5.89-6.51 5.89-6.51 5.9-6.5 5.89-6.51 5.89-6.51 6.2-6.9 5.89-6.51 5.89-6.51 6.2-6.9 5.89-6.51 5.89-6.51 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5 15 10 15 15 10 15 15 10 15 15 10 15 15 10 2 2 2 2 2 2 2 2 2 2 2 2 2 2 96 96 96 48 48 48 19 19 20 9 9 10 5 5 0.01 0.01 0.01 0.005 0.005 0.005 0.002 0.002 0.002 0.001 0.001 0.001 0.0005 0.0005 o %/ C Double Anode: Electrical specifications apply under both bias polarities. NOTES: 1. 2. 3. 4. 5. Add a "-1" suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ voltage nominal of 6.2 V, add a further hyphened suffix number % to the part number for desired tolerance, e.g. 1N827UR-12%, 1N829UR-1-1%, 1N829AUR-1-1%, etc. o Zener impedance is measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 C. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at any discrete temperature between the established limits. Voltage measurements to be performed 15 seconds after application of dc current. 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, and 1N829UR-1 also have qualification to MIL-PRF-19500/159 by adding the JAN, JANTX, or JANTXV prefix to part numbers as well as the "-1" suffix. T4-LDS-0220-1, Rev. 1 (111514) (c)2011 Microsemi Corporation Page 4 of 6 1N821UR-1 thru 1N829AUR-1 600 500 400 300 200 Zener Impedance IZT (Ohms) PD, Rated Power Dissipation (mW) GRAPHS 100 0 25 50 100 150 175 o TEC, End Cap temperature ( C) IZ - Operating Current (mA) FIGURE 3 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT The curve shown in Figure 3 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 7.5 mA. EXAMPLE: A diode in this series is operated at a current of 7.5 mA and has specified Temperature Coefficient (TC) limits of +/-0.005 %/oC. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 6.0 mA, the new TC limits (%/oC) can be estimated using the graph in FIGURE 3. At a test current of 6.0 mA the change in Temperature Coefficient (TC) is approximately -0.0006 %/oC. The algebraic sum of +/-0.005 %oC and -0.0006 %/oC gives the new estimated limits of +0.0044 %/oC and -0.0056 %/oC. Operating Current IZT (mA) FIGURE 2 TYPICAL ZENER IMPEDANCE VS. OPERATING CURRENT VZ - Change in Zener Voltage (mV) Change in temperature coefficient (mV/oC) Change in temperature coefficient (%/oC) FIGURE 1 POWER DERATING CURVE IZ - Operating Current (mA) FIGURE 4 TYPICAL CHANGE OF ZENER VOLTAGE WITH CHANGE IN OPERATING CURRENT This curve in Figure 4 illustrates the change of diode voltage arising from the effect of impedance. It is in effect an exploded view of the zener operating region of the I-V characteristic. In conjunction with Figure 3, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. T4-LDS-0220-1, Rev. 1 (111514) (c)2011 Microsemi Corporation Page 5 of 6 1N821UR-1 thru 1N829AUR-1 PACKAGE DIMENSIONS Symbol BD BL ECT S Dimensions Inches Millimeters Min Max Min Max .063 .067 1.60 1.70 .130 .146 3.30 3.71 .016 .022 0.41 0.56 .001 Min 0.03 Min NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. PAD LAYOUT A B C T4-LDS-0220-1, Rev. 1 (111514) INCHES .200 .055 .080 (c)2011 Microsemi Corporation mm 5.08 1.40 2.03 Page 6 of 6