VMM 45-02F Dual Power HiPerFETTM Module Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family 1 VDSS = 200 V ID25 = 45 A RDS(on) = 45 mW TO-240 AA 3 6 2 1 4 5 5 4 2 Preliminary Data 6 3 Maximum Ratings 1 = Drain 1 3 = Source 2 5 = Gate 1 2 = Source 1, Drain 2 4 = Kelvin Source 1 6 = Gate 2 Symbol Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 10 kW 200 200 V V VGS VGSM Continuous Transient 20 30 V V ID25 ID80 IDM TC = 25C TC = 80C TC = 25C, tp = 10 s, pulse width limited by TJM 45 34 180 A A A Ptot TC = 25C 190 W -40 ... +150 150 -40 ... +125 C C C * Switched-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) 3000 3600 V~ V~ Advantages TJ TJM Tstg VISOL 50/60 Hz IISOL 1 mA t = 1 min t=1s Md Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Weight Typical including screws Symbol Conditions VDSS VGS(th) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA IGSS VGS = 20 V DC, VDS = 0 IDSS VDS = VDSS, VGS = 0 V, TJ = 25C VDS = 0.8 * VDSS, VGS = 0 V, TJ = 125C RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2% 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g Features * Two MOSFET's in phaseleg config. * International standard package * Direct copper bonded Al2O3 ceramic base plate * Isolation voltage 3600 V~ * Low RDS(on) HDMOSTM process Applications * * * * Easy to mount with two screws Space and weight savings High power density Low losses Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 V V 500 nA 15 A 1 mA 39 45 mW 948 Data per MOSFET unless otherwise stated. (c) 2000 IXYS All rights reserved 1-2 VMM 45-02F Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25 pulsed 20 30 S 4800 7500 pF 900 2250 pF Crss 310 750 pF td(on) 40 ns 45 ns 300 ns 45 ns 190 225 nC 35 55 nC 95 115 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 1 W (External), resistive load tf Qg Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC Dimensions in mm (1 mm = 0.0394") 0.63 K/W RthCH heatsink compound applied dS Creepage distance on surface dA Strike distance through air a Allowable acceleration Source-Drain Diode 0.3 12.7 mm 9.6 mm 50 m/s2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS; VGS = 0 V, Pulse test, t 300 s, duty cycle d 2% trr IF = IS, -di/dt = 100 A/s, VDS = 100 V, VGS = 0 V (c) 2000 IXYS All rights reserved K/W 45 A 180 A 0.9 1.2 V 200 400 ns 2-2