2008. 1. 3 1/2
SEMICONDUCTOR
TECHNICAL DATA
MBR10200CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
SWITCHING MODE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
·Average Output Rectified Current
: IO=10A.
·Repetitive Peak Reverse Voltage
: VRRM=200V.
·Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8 0.1
+
_
2.8 0.1
+
_
2.54 0.2
+
_
1.27 0.1
+
_
1.4 0.1
+
_
13.08 0.3
+
_
3.6 0.2
+
_
+
_
9.9 0.2
+
_
9.2 0.2
+
_
4.5 0.2
+
_
2.4 0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
ML
L
E
I
I
O
C
H
NN
Q
D
Q
P
P
1. ANODE
2. CATHODE
3. ANODE
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 200 V
Average Output Rectified
Current (Tc=118℃) (Note) IO10 A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz) IFSM 100 A
Junction Temperature Tj-40～150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : average forward current of centertap full wave connection.
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note) VFM IFM=5A - - 0.95 V
Repetitive Peak
Reverse Current (Note) IRRM VRRM=Rated - - 150 ㎂
Reverse Recovery Time (Note) trr IF=1.0A, di/dt=-30A/㎲- - 35 ns
Thermal Resistance (Note) Rth(j-c) Juction to Case - - 2.2 ℃/W
Note : A value of one cell
2008. 1. 3 2/2
MBR10200CT
Revision No : 0
AVERAGE FORWARD CURRENT IF(AV) (A)
AVERAGE FORWARD CURRENT I F(AV) (A)
PF(AV) (W)
AVERAGE FORWARD CURRENT IF(AV) (A)
PF(AV) - IF(AV)
AVERAGE FORWARD POWER DISSIPATION
REVERSE CURRENT IR (µA)
REVERSE VOLTAGE VR (V)
IR - VR
IF - VF
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (A)
IF - TCIF - TA
CASE TEMPERATURE Tc ( C) AMBIENT TEMPERATURE TA ( C)
0
0
0
0
0
0
0.1
0.2 0.4 0.6 0.8 1
1
10
50 100 150
0.1
1
10
25 50 75 100 125 175150
4
2
6
DC
40 80 120 160
2
8
10
4
6
12 RATED VOLTAGE APPLIED
ΘJA
ΘJA
R =16 C/W
R =62.5 C/W
(NO HEAT SINK)
DC
DC
2468
2
8
DC
4
6
8
10
12
10 12
10
200
RATED VOLTAGE
R = 2.2 C/W
ΘJC
APPLIED
j
T =25 C Tj =25 C
