2SK2850-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 6 24 30 6 277 125 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=14.1mH, Vcc=90V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=30V VDS=0V ID=3.0A VGS=10V Min. 900 2.5 Tch=25C Tch=125C ID=3.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=6A VGS=10V 2.0 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 3.0 3.5 10 500 0.2 1.0 10 100 1.87 2.50 4.0 950 1450 140 210 80 120 20 30 50 80 110 170 60 90 6 1.0 900 10 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 1.0 35.0 C/W C/W 1 2SK2850-01 FUJI POWER MOSFET Characteristics Safe operating area Power Dissipation PD=f(Tc) 150 ID=f(VDS):D=0.01,Tc=25C 10 2 125 10 1 t=0.01 s 1 s 75 10s DC ID [A] PD [W] 100 10 0 100s 50 10 1ms -1 t D= 25 t T 10ms T 0 0 50 100 10 150 100ms -2 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 14 VGS=20V 12 10V 8V 7V 10 6 ID [A] 10 nd e mm 5.0V 4 10 o c e r n sig ew n for 5.5V . de 1 6V 8 ID [A] 10 0 -1 4.5V 2 ot 0 0 5 10 N 15 20 4.0V 25 30 10 35 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical forward transconductance Typical drain-source on-state resistance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 7 6 VGS= 4.0V 4.5V 1 RDS(on) [ ] 10 5.0V 5.5V 5 gfs [s] 10 0 4 6V 7V 8V 3 10V 20V 2 1 10 -1 10 -1 10 0 10 1 0 0 ID [A] 5 10 15 ID [A] http://store.iiic.cc/ 2 2SK2850-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=3A,VGS=10V Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 8 5.0 4.0 6 4 VGS(th) [V] RDS(on) [ ] max. max. 3.0 typ. min. 2.0 typ. 2 1.0 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] Tch [**] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=6A,Tch=25C 10n 40 800 Vcc=720V 0V 18 c= 0V c V 45 V 0 72 700 600 30 450V 20 400 e m m 15 300 200 180V 10 100 0 0 20 40 60 ot N 80 100 o c e r 120 140 160 Ciss nd Coss 100p Crss 5 10p 0 180 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Avalanche energy derating Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 10 n sig ew n for C [F] 25 VGS [V] Eas=f(starting Tch):Vcc=90V,IAV=6A 2 300 250 10 1 200 o 10 Eas [mJ] Tch=25 C typ. IF [A] VDS [V] 1n 500 . de 35 0 150 100 10 -1 50 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 VSD [V] 50 100 150 o Starting Tch [ C] http://store.iiic.cc/ 3 2SK2850-01 1 10 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 t D= 0 0.02 0.01 t T T -2 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4