1
TO-3P
Item Symbol Ratings Unit
Drain-source voltage V DS 900
Continuous drain current ID±6
Pulsed drain current ID(puls] ±24
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 6
Maximum Avalanche Energy EAS *1 277
Max. power dissipation PD125
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2850-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=900V
VGS=±30V
ID=3.0A VGS=10V
ID=3.0A VDS=25V
VCC=600V ID=6A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
A
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.0
35.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100 µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
W
°C
°C
*1 L=14.1mH, Vcc=90V *2 Tch=150°C
900
2.5 3.0 3.5
10 500
0.2 1.0
10 100
1.87 2.50
2.0 4.0
950 1450
140 210
80 120
20 30
50 80
110 170
60 90
61.0 1.5
900
10
-55 to +150 <
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
保守移行機種
Not recommend for new design.
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2
Characteristics
2SK2850-01 FUJI POWER MOSFET
0 50 100 150
0
25
50
75
100
125
150
Power Dissipation
PD=f(Tc)
PD [W]
Tc [oC] 100101102103
10-2
10-1
100
101
102
t=0.01µs
Safe operating area
DC
VDS [V]
ID [A]
1µs
100ms
10ms
1ms
100µs
10µs
t
T
D=
t
T
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
14
4.0V
5.0V
4.5V
7V
5.5V
6V
8V
10V
VGS=20V
VDS [V]
ID [A]
Typical output characteristics
012345678910
10-2
10-1
100
101
Typical transfer characteristic
ID [A]
VGS [V]
10-1 100101
10-1
100
101
Typical forward transconductance
gfs [s]
ID [A] 0 5 10 15
0
1
2
3
4
5
6
7
6V 7V
VGS=
4.0V 4.5V 5.5V
8V
20V
10V
5.0V
ID [A]
RDS(on) [ Ω ]
Typical drain-source on-state resistance
ID=f(VDS):D=0.01,Tc=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
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Not recommend for new design.
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3
2SK2850-01 FUJI POWER MOSFET
-50 0 50 100 150
0
2
4
6
8
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
RDS(on) [ Ω ]
Tch [••]
-50 0 50 100 150
0.0
1.0
2.0
3.0
4.0
5.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VGS(th) [V]
Tch [oC]
0 20 40 60 80 100 120 140 160 180
0
100
200
300
400
500
600
700
800
Vcc=180V
450V
720V
180V
450V
Vcc=720V
VGS [V]
VDS [V]
Typical gate charge characteristic
Qg [nC]
0
5
10
15
20
25
30
35
40
10-2 10-1 100101102
10p
100p
1n
10n
Crss
Coss
Ciss
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-2
10-1
100
101
102
Tch=25oC typ.
Forward characteristic of reverse of diode
IF [A]
VSD [V]
0 50 100 150
0
50
100
150
200
250
300
Avalanche energy derating
Eas [mJ]
Starting Tch [oC]
VGS=f(Qg):ID=6A,Tch=25°C
IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,IAV=6A
保守移行機種
Not recommend for new design.
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4
2SK2850-01 FUJI POWER MOSFET
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
101
D=0.5
0.2
0.02
0.05
0.1
0.01
0
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
t [s]
t
T
D=
t
T
保守移行機種
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