IRF7413UPbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V
(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board
Rθ is measured at TJ approximately 90°C
Symbol Parameter Min Typ Max Units
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C
––– ––– 0.011
––– ––– 0.018
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V
gfs Forward Transconductance 10 ––– ––– S
––– ––– 1.0
––– ––– 25
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
QgTotal Gate Charge ––– 52 79
Qgs Gate-to-Source Charge ––– 6.1 9.2 nC
Qgd Gate-to-Drain ("Miller") Charge ––– 16 23
RGGate Resistance 1.2 ––– 3.7
td(on) Turn-On Delay Time ––– 8.6 –––
trRise Time ––– 50 –––
td(off) Turn-Off Delay Time ––– 52 ––– ns
tfFall Time ––– 46 –––
Ciss Input Capacitance ––– 1800 –––
Coss Output Capacitance ––– 680 –––
Crss Reverse Transfer Capacitance ––– 240 –––
Symbol Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode) A
Pulsed Source Current
Bod
Diode
c
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 74 110 ns
Qrr Reverse Recovery Charge ––– 200 300 nC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
VGS = 10V, See Fig. 6 and 9
f
VDD = 15V
ID = 7.3A
VGS = -20V
VGS = 20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
TJ = 25°C, IS = 7.3A, VGS = 0V
e
TJ = 25°C, IF = 7.3A
di/dt = 100A/µs
e
showing the
integral reverse
p-n junction diode.
VGS = 10V, ID = 7.3A
f
MOSFET symbol
VDS = 10V, ID = 3.7A
ID = 7.3A
VDS = 24V
Conditions
RG = 2.0Ω, See Fig. 10
f
VGS = 0V
RG = 6.2 Ω
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
RDS(on)
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
ΩVGS = 4.5V, ID = 3.7A
f
Static Drain-to-Source On-Resistance
IS
IDSS Drain-to-Source Leakage Current µA
IGSS
pF
3.1––––––
ISM ––– ––– 58