SRAM AS5C4008 Austin Semiconductor, Inc. 512K x 8 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATION 32-Pin DIP (CW), 32-Pin LCC (EC) 32-Pin SOJ (ECJ) * SMD 5962-95600 * MIL STD-883 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss FEATURES * * * * * * High Speed: 17, 20, 25, 35 and 45ns High-performance, low power military grade device Single +5V 10% power supply Easy memory expansion with CE\ and OE\ options All inputs and outputs are TTL-compatible Ease of upgradability from 1 Meg using the 32 pin evolutionary version. OPTIONS MARKING * Timing 15ns access (contact factory) 17ns access 20ns access 25ns access 35ns access 45ns access * Operating Temperature Range Military: -55oC to +125oC Industrial: -40oC to +85oC * Packages Ceramic Dip (600 mil) Ceramic Flatpack Ceramic LCC Ceramic SOJ Ceramic LCC (contact factory) * Options 2V data retention/ low power -15 -17 -20 -25 -35 -45 Radiation Tolerant (EPI) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 No. 112 No. 304 No. 209 No. 502 No. 208 Vcc A15 A17 WE\ A13 A8 A9 A11 OE\ A10 CE\ I/O7 I/O6 I/O5 I/O4 I/O3 L Vcc A15 A17 WE\ A13 A8 A9 A11 OE\ A10 CE\ I/O7 I/O6 I/O5 I/O4 I/O3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 E 32-Pin LCC (ECA) A12 A14 A16 A18 Vcc A15 A17 NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available. Please contact factory for availability of specific part number combinations. GENERAL DESCRIPTION A7 A6 A5 A4 A3 A2 A1 A0 I/O0 4 3 2 32 31 30 5 29 1 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 WE\ A13 A8 A9 A11 OE\ A10 CE\ I/O 7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 The AS5C4008 is a 4 megabit monolithic CMOS SRAM, organized as a 512K x 8. The evolutionary 32 pin device allows for easy upgrades from the 1 meg SRAM. For flexibility in high-speed memory applications, ASI offers chip enable (CE\) and output enable (OE\) capabilities. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. This allows systems designers to meet low standby power requirements. All devices operate from a single +5V power supply and all inputs are fully TTL-Compatible. AS5C4008 Rev. 4.0 10/00 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 32-Pin Flat Pack (F) A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss XT IT CW F EC ECJ ECA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 For more products and information please visit our web site at www.austinsemiconductor.com Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM AS5C4008 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM GND 2,097,152 Bit Memory Array I/O7 I/O Control Row Decoder A0:A18 Input Buffer Vcc I/O1 CE\ OE\ WE\ Column Decoder Power Down TRUTH TABLE MODE OE\ CE\ WE\ STANDBY X H X READ L L H NOT SELECTED H L H WRITE X L L AS5C4008 Rev. 4.0 10/00 DQ POWER High-Z STANDBY Q ACTIVE High-Z ACTIVE D ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM AS5C4008 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. Voltage on Vcc Supply Relative to Vss...................-.5V to +7.0V Storage Temperature ............................................-65C to +150C Short Circuit Output Current (per I/O)................................20mA Voltage on any Pin Relative to Vss......................-.5V to Vcc+1 V Maximum Junction Temperature**....................................+150C ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC<TA<125oC or -40oC to +85oC; Vcc = 5V +10%) PARAMETER Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Supply Voltage PARAMETER Power Supply Current: Operating CONDITION OV < VIN < Vcc Output(s) disabled OV < VOUT < Vcc IOH = -4.0 mA IOL = 8.0 mA Power Supply Current: Standby L Version Only CE\ < VCC -0.2V; Vcc = MAX VIN < Vss +0.2V or VIN > Vcc -0.2V; f = 0 L Version Only MIN 2.2 -0.5 -10 MAX VCC +0.5 0.8 10 UNITS V V ILO -10 10 VOH VOL Vcc 2.4 --4.5 -0.4 5.5 V V V NOTES 1 1, 2 1 1 1 SYM -15 -17 MAX -20 -25 -35 -45 ICCSP 225 225 225 225 225 225 mA ICCLP 180 180 180 180 180 180 mA ISBTSP 60 60 60 60 60 60 mA ISBTLP 30 30 30 30 30 30 mA ISBCSP 25 25 25 25 25 25 mA ISBCLP 20 20 20 20 20 20 mA CONDITIONS CE\ < VIL; Vcc = MAX f = MAX = 1/tRC Outputs Open L Version Only CE\ > VIH; Vcc = MAX f = MAX = 1/tRC Outputs Open SYMBOL VIH VIL ILI UNITS NOTES 3 CAPACITANCE PARAMETER Input Capacitance Output Capactiance AS5C4008 Rev. 4.0 10/00 CONDITIONS o TA = 25 C, f = 1MHz VIN = 0 SYMBOL MAX UNITS NOTES CI 12 pF 4 Co 14 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM AS5C4008 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55oC<TA<125oC or -40oC to +85oC; Vcc = 5V +10%) DESCRIPTION READ CYCLE Read Cycle Time Address Access Time Chip Enable Access Time Output Hold From Address Change Chip Enable to Output in Low-Z Chip Disable to Output in High-Z Output Enable Acess Time Output Enable to Output in Low-Z Output Disable to Output in High-Z WRITE CYCLE WRITE Cycle Time Chip Enable to End of Write Address Valid to End of Write Address Setup Time Address Hold From End of Write WRITE Pulse Width Data Setup Time Data Hold Time Write Disable to Output in Low-Z Write Enable to Output in High-Z AS5C4008 Rev. 4.0 10/00 SYM -15 MIN tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE 15 tWC tCW tAW tAS tAH tWP tDS tDH 15 15 15 0 1 15 7 0 0 0 tLZWE tHZWE MAX -17 -20 -25 -35 -45 UNITS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 17 20 15 15 2 2 0 0 0 7 8 17 17 2 2 0 7 0 0 7 17 16 16 0 1 17 9 0 0 0 8 8 25 20 20 2 2 0 8 0 0 8 20 17 17 0 1 20 10 0 0 0 8 10 35 25 25 2 2 0 8 0 0 8 25 20 20 0 1 25 12 0 0 0 10 12 45 35 35 2 2 0 10 0 0 10 35 30 30 0 1 25 20 0 0 0 15 15 20 ns ns ns ns ns ns ns ns ns 30 ns ns ns ns ns ns ns ns ns ns 45 45 2 2 0 15 0 0 25 45 35 35 0 1 25 25 0 0 0 20 25 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM AS5C4008 Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ................................................... Vss to 3.0V Input rise and fall times ....................................................... 3ns Input timing reference levels ............................................ 1.5V Output reference levels ..................................................... 1.5V Output load ............................................... See Figures 1 and 2 Q 167 ohms 167 ohms Q 1.73V 1.73V C=30pF C=5pF Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent 9. NOTES 1. 2. 3. 4. 5. 6. 7. 8. All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV from steady state voltage. At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE. WE\ is HIGH for READ cycle. 10. 11. 12. 13. 14. 15. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. Chip enable and write enable can initiate and terminate a WRITE cycle. Output enable (OE\) is inactive (HIGH). Output enable (OE\) is active (LOW). ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150C. Care should be taken to limit power to acceptable levels. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION VCC for Retention Data Data Retention Current (L Version Only) Chip Deselect to Data Retention Time CONDITIONS CE\ > (Vcc -0.2V) VIN > (Vcc -0.2V) or < 0.2V VCC = 2V Operation Recovery Time AS5C4008 Rev. 4.0 10/00 SYMBOL MIN VDR 2 ICCDR MAX UNITS NOTES V 4.5 mA tCDR 0 ns 4 tR 10 ms 4, 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM AS5C4008 Austin Semiconductor, Inc. LOW VCC DATA RETENTION WAVEFORM DATA RETENTION MODE VDR >2V 4.5V Vcc 4.5V t tR tR CDR tCDR VIH VDR CE\ VIL READ CYCLE NO. 1 8, 9 (Write Enabled Controlled) t RC tRC ADDRESS VALID ttAA AA ttOH OH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10 (Write Enabled Controlled) ttRC RC CE\ t AOE tAOE tHZOE tHZOE t LZOE tLZOE OE\ t LZCE tLZCE ttACE ACE tHZCE tHZCE DQ DATA VALID ttPU PU ttPD PD Icc AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM AS5C4008 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) ttWC WC ADDRESS tAW tAW tAS tAS ttAH AH tCW tCW CE\ ttWP WP WE\ ttDS DS D ttDH DH DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 12, 13 (Write Enabled Controlled) t WC tWC Address ADDRESS VALID ttAW AW t AH tAH tCW tCW CE\ ttAS AS t WP1 tWP1 WE\ ttDS DS D ttDH DH DATA VALID ttHZWE HZWE ttLZWE LZWE Q AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM AS5C4008 Austin Semiconductor, Inc. WRITE CYCLE NO. 37, 12, 14 (Write Enable Controlled) tWC ADDRESS tAW 123456789012345678901 12345678901234567890 123456 12345678901234567890 123456789012345678901 123456 123456 12345678901234567890 123456789012345678901 123456789012345678901 123456 CE\12345678901234567890 123456 12345678901234567890 123456789012345678901 tAS WE\ D t WP2 1234567 1234567 1234567 1234567 1234567 1234567890123456789012345678901212345 123456 1234567890123456789012345678901212345 123456 1234567890123456789012345678901212345 123456 1234567890123456789012345678901212345 123456 tHZWE 123456789012345678901234 1234567890123456789012345 1234 Q t AH 123456 1234567890123456789 123456 1234567890123456789 123456 1234567890123456789 123456 1234567890123456789 123456 1234567890123456789 tCW 1234567890123456789012345 123456789012345678901234 1234 1234567890123456789012345 123456789012345678901234 1234 1234 123456789012345678901234 tDH tDS Data Valid tLZWE High-Z 12345 12345678901 1234567890 12345 12345678901 1234567890 12345678901 1234567890 12345 12345 12345678901 1234567890 1234 123456 12345 1234 123456 12345 1234 123456 12345 1234 1234 1234 Don't Care 1234 123 123 123 AS5C4008 Rev. 4.0 10/00 Undefined Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM AS5C4008 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #112 (Package Designator CW) SMD 5962-95600, Case Outline X D A L L1 b e Pin 1 b1 E b2 E1 SMD Specifications SYMBOL A b b1 b2 D E e E1 L1 L MIN --0.014 0.045 0.008 --0.510 MAX 0.225 0.026 0.065 0.018 1.680 0.620 0.100 BSC 0.600 BSC 0.125 0.015 0.200 0.070 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM AS5C4008 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #304 (Package Designator F) SMD 5962-95600, Case Outline 9 L E e b D D1 Top View A c Q E2 SYMBOL A b c D D1 E E2 e L Q SMD SPECIFICATIONS MIN MAX 0.096 0.114 0.008 0.019 0.003 0.008 0.816 0.838 0.742 0.758 0.419 0.460 0.345 0.427 0.050 BSC 0.290 0.310 0.024 0.038 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM AS5C4008 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #209 (Package Designator EC) SMD 5962-95600, Case Outline Z A D1 D L R e b2 E A1 SYMBOL A A1 b2 D D1 E e L R SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.006 0.054 0.022 0.028 0.815 0.835 0.740 0.760 0.440 0.460 0.050 BSC 0.100 REF 0.009 REF NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. *All measurements are in inches. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM AS5C4008 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #502 (Package Designator ECJ) A L TYP L2 e D A2 D1 E2 b A1 E SYMBOL A A1 A2 b D D1 E E2 e L L2 ASI SPECIFICATIONS MIN MAX 0.115 0.160 0.054 0.075 0.025 0.063 0.015 0.028 0.815 0.835 0.740 0.760 0.418 0.460 0.371 0.440 0.050 BSC 0.050 0.070 0.115 0.135 NOTE: This package meets SMD 5962-95600, Case Outline U dimensions in every aspect, except dimension E2. *All measurements are in inches. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM AS5C4008 Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #208 (Package Designator ECA) D1 L1 e E1 D R E A A1 SYMBOL A A1 B1 D D1 E E1 e L L1 R L B1 SMD SPECIFICATIONS MIN MAX 0.060 0.080 0.040 0.050 0.022 0.028 0.540 0.560 0.390 0.410 0.442 0.458 0.290 0.310 0.045 0.055 0.045 0.055 0.075 0.095 0.004 0.014 *All measurements are in inches. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM AS5C4008 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: AS5C4008CW-25L/883C EXAMPLE: AS5C4008F-45LE/883C Device Number AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 AS5C4008 Device Package Speed Options** Process Number Type ns AS5C4008 CW -15 L /* AS5C4008 CW -15 E /* AS5C4008 CW -17 L /* AS5C4008 CW -17 E /* AS5C4008 CW -20 L /* AS5C4008 CW -20 E /* AS5C4008 CW -25 L /* AS5C4008 CW -25 E /* AS5C4008 CW -35 L /* AS5C4008 CW -35 E /* AS5C4008 CW -45 L /* AS5C4008 CW -45 E /* EXAMPLE: AS5C4008C-20E/883C EXAMPLE: AS5C4008ECA-45/883C Device Number Device Package Speed Options** Process Number Type ns L /* -15 AS5C4008 EC /* E AS5C4008 EC -15 /* ECJ -15 L AS5C4008 -15 E /* ECJ AS5C4008 AS5C4008 EC -17 L /* AS5C4008 EC -17 E /* AS5C4008 ECJ -17 L /* AS5C4008 ECJ -17 E /* AS5C4008 EC -20 L /* AS5C4008 EC -20 E /* AS5C4008 ECJ -20 L /* AS5C4008 ECJ -20 E /* AS5C4008 EC -25 L /* AS5C4008 EC -25 E /* AS5C4008 ECJ -25 L /* AS5C4008 ECJ -25 E /* AS5C4008 EC -35 L /* AS5C4008 EC -35 E /* AS5C4008 ECJ -35 L /* AS5C4008 ECJ -35 E /* AS5C4008 EC -45 L /* AS5C4008 EC -45 E /* AS5C4008 ECJ -45 L /* AS5C4008 ECJ -45 E /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing **DEFINITION OF OPTIONS 2V Data Retention/Low Power Radiation Tolerant (EPI) AS5C4008 Rev. 4.0 10/00 Package Speed Options** Process Type ns F -15 L /* F -15 E /* F -17 L /* F -17 E /* F -20 L /* F -20 E /* F -25 L /* F -25 E /* F -35 L /* F -35 E /* F -45 L /* F -45 E /* Package Speed Options** Process Type ns AS5C4008 AS5C4008 ECA ECA -15 -15 L E /* /* AS5C4008 AS5C4008 ECA ECA -17 -17 L E /* /* AS5C4008 AS5C4008 ECA ECA -20 -20 L E /* /* AS5C4008 AS5C4008 ECA ECA -25 -25 L E /* /* AS5C4008 AS5C4008 ECA ECA -35 -35 L E /* /* AS5C4008 AS5C4008 ECA ECA -45 -45 L E /* /* -40oC to +85oC -55oC to +125oC -55oC to +125oC L E Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14 SRAM AS5C4008 Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE Package Designator CW ASI Part # AS5C4008CW-15/883C AS5C4008CW-20/883C AS5C4008CW-25/883C AS5C4008CW-35/883C AS5C4008CW-45/883C AS5C4008CW-15L/883C AS5C4008CW-20L/883C AS5C4008CW-25L/883C AS5C4008CW-35L/883C AS5C4008CW-45L/883C Package Designator F SMD Part ASI Part # 5962-9560014MXA 5962-9560004MXA 5962-9560003MXA 5962-9560002MXA 5962-9560001MXA 5962-9560013MXA 5962-9560008MXA 5962-9560007MXA 5962-9560006MXA 5962-9560005MXA AS5C4008F-15/883C AS5C4008F-20/883C AS5C4008F-25/883C AS5C4008F-35/883C AS5C4008F-45/883C AS5C4008F-15L/883C AS5C4008F-20L/883C AS5C4008F-25L/883C AS5C4008F-35L/883C AS5C4008F-45L/883C Package Designator EC ASI Part # AS5C4008EC-15/883C AS5C4008EC-20/883C AS5C4008EC-25/883C AS5C4008EC-35/883C AS5C4008EC-45/883C AS5C4008EC-15L/883C AS5C4008EC-20L/883C AS5C4008EC-25L/883C AS5C4008EC-35L/883C AS5C4008EC-45L/883C SMD Part# 5962-9560014M9A 5962-9560004M9A 5962-9560003M9A 5962-9560002M9A 5962-9560001M9A 5962-9560013M9A 5962-9560008M9A 5962-9560007M9A 5962-9560006M9A 5962-9560005M9A Package Designator ECJ SMD Part# ASI Part # 5962-9560014MZA 5962-9560004MZA 5962-9560003MZA 5962-9560002MZA 5962-9560001MZA 5962-9560013MZA 5962-9560008MZA 5962-9560007MZA 5962-9560006MZA 5962-9560005MZA AS5C4008EC-15/883C AS5C4008ECJ-20/883C AS5C4008ECJ-25/883C AS5C4008ECJ-35/883C AS5C4008ECJ-45/883C AS5C4008EC-15L/883C AS5C4008ECJ-20L/883C AS5C4008ECJ-25L/883C AS5C4008ECJ-35L/883C AS5C4008ECJ-45L/883C SMD Part# 5962-9560014MUA 5962-9560004MUA 5962-9560003MUA 5962-9560002MUA 5962-9560001MUA 5962-9560013MUA 5962-9560008MUA 5962-9560007MUA 5962-9560006MUA 5962-9560005MUA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. AS5C4008 Rev. 4.0 10/00 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 15