SCH1301
No.8099-1/4
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±8V
Drain Current (DC) ID--2.4 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --9.6 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --12 V
Zero-Gate Voltage Drain Current IDSS VDS=--4V, VGS=0V --1 µA
VDS=--12V, VGS=0V --10 µA
Gate-to-Source Leakage Current IGSS VGS=±6.4V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward T ransfer Admittance yfsVDS=--6V, ID=--1.3A 2.52 4.2 S
RDS(on)1 ID=--1.3A, VGS=--4.5V 90 120 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.7A, VGS=--2.5V 125 175 mΩ
RDS(on)3 ID=--0.3A, VGS=--1.8V 165 280 mΩ
RDS(on)4 ID=--0.1A, VGS=--1.5V 330 580 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 450 pF
Output Capacitance Coss VDS=--6V, f=1MHz 100 pF
Reverse T ransfer Capacitance Crss VDS=--6V, f=1MHz 85 pF
Marking : JA Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8099A
71505 MS IM TB-00001682 / N3004PE TS IM TB-00000519
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SCH1301 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SCH1301
No.8099-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise T ime trSee specified Test Circuit. 70 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 65 ns
Fall T ime tfSee specified Test Circuit. 50 ns
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--2.6A 6.5 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--2.6A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--2.6A 2.0 nC
Diode Forward Voltage VSD IS=--2.6A, VGS=0V --0.87 --1.5 V
Package Dimensions Switching Time Test Circuit
unit : mm
7028-002
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1.3A
RL=4.6Ω
VDD= --6V
VOUT
SCH1301
VIN
0V
--4.5V
VIN
1.6
1.6
1.5
0.05
0.5
0.05
0.56
0.25
0.2 0.2
13
2
645
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT04327
0 --0.1
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
0
0
--0.2 --0.3 --0.4 --0.5
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
--1.5V
--2.5V
--1.8V
--4.5V
IT04325
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
VDS= --6V
IT04326
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT08145
0 --1 --2 --3 --4 --5 --6 --7 --8
50
100
150
200
250
Ta=25°C
--1.3A
ID= --0.7A
--3.0V
--3.5V
VGS= --1.0V
25°C
--25
°
C
Ta=75°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
100
150
200
250
300
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
ID= --0.3A, VGS= --1.8V
ID= --0.7A, VGS= --2.5V
ID= --1.3A, VGS= --4.5V
SCH1301
No.8099-3/4
0 --2 --4 --6 --8 --10 --12
100
1000
7
5
3
2
7
5
3
--0.1 23 57 23 57
--1.0
01234567
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT04333
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
VDD= --6V
VGS= --4.5V
td(on)
td(off)
tr
tf
IT04331
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT04329
--0.1 23 57 23 57
--1.0
1.0
10
7
5
7
5
3
2
3
2
100
10
7
5
3
2
5
3
2
Forward Transfer Admittance,
y
fs -- S
y
fs-- ID
VDS= --6V
75°C
Ta= --25
°
C
IT04330
--0.4 --0.6 --0.8 --1.0 --1.2
--0.1
--1.0
--10
7
5
3
2
7
5
3
2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
VGS=0V
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
f=1MHz
Ciss
Coss
Crss
IT04332
VDS= --6V
ID= --2.6A
25
°
C
--25
°
C
25°C
Ta=75
°
C
IT08146
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
2
3
5
7
2
3
5
7
2
3
5
7
2
--10
--1.0
--0.1
--0.01 23 57 23 57 23 57
--0.01 --0.1 --1.0 --10 23
I
DP= --9.6A
ID= --2.4A
Operation in this
area is limited by RDS(on).
100ms
DC operation (Ta=25°C)
1ms
10ms
<10µs
0.2
0.4
0.6
0.8
1.0
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT08147
Mounted on a ceramic board (900mm
2
✕0.8mm)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm)
SCH1301
No.8099-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2005. Specifications and information herein are subject
to change without notice.
PS
Note on usage : Since the SCH1301 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.