QFET N-CHANNEL FQP7N20 FEATURES BVDSS = 200V * Advanced New Design * Avanced Rugged Technology * Rugged Gate Oxide Technology * Very Low Intrinsic Capacitances * Excellent Switching Characteristics * Unrivalled Gate Charge: 8.0nC (Typ.) * Extended Safe Operating Area * Lower RDS(ON): 0.55 (Typ.) RDS(ON) = 0.69 ID = 6.6A TO-220 1 2 3 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID Characteristics Value Units Drain-to-Source Voltage 200 V Continuous Drain Current (TC = 25C) 6.6 Continuous Drain Current (TC = 100C) 4.2 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ, TSTG TL A 26 V 30 J 73 mJ 6.6 A 6.3 mJ 5.5 V/ns 63 0.51 W W/C Total Power Dissipation (TC = 25C) Linear Derating Factor Operating Junction and Storage Temperature Range -55 to +150 C Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds 300 THERMAL RESISTANCE Symbol Characteristics Typ. Max. RJC Junction-to-Case - 1.98 RCS Case-to-Sink 0.5 - RJA Junction-to-Ambient - 62.5 Units C/W REV. B 1 1999 Fairchild Semiconductor Corporation FQP7N20 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) Symbol Characteristics Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown Votlage 200 - - V BV/TJ Breskdown Voltage Temp. Coeff. - 0.27 - V/C 3.0 - 5.0 V Gate-Source Leakage, Forward - - 100 Gate-Source Leakage, Reverse - - -100 - - 1 - - 10 Static Drain-Source On-State Resistance - 0.55 0.69 VGS=10V, ID=3.3A gfs Forward Transconductance - 3.7 - S VDS=40V, ID=3.3A Ciss Input Capacitance - 300 400 Coss Output Capacitance - 60 75 pF Crss Reverse Transfer Capacitance - 9 12 VGS=0V, VDS=25V f=1MHz See Fig 5 td(on) Turn-On Delay Time - 8.0 25 Rise Time - 65 140 Turn-Off Delay Time - 15 40 ns VDD=100V, ID=6.6A RG=50 See Fig 13 Fall Time - 35 80 Qg Total Gate Charge - 8.0 10 Qgs Gate-Source Charge - 2.4 - nC Qgd Gate-Drain (Miller) Charge - 3.3 - VDS=160V, VGS=10V ID=6.6A See Fig 6 & Fig 12 VGS(th) IGSS IDSS RDS(on) tr td(off) tf Gate Threshold Voltage Drain-to-Source Leakage Current nA A VGS=0V, ID=250A ID=250A, See Fig 7 VDS=5V, ID=250A VGS=30V VGS= -30V VDS=200V VDS=160V, TC=125C SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristics Continuous Source Current Min. Typ. Max. - - 6.6 Test Conditions A Integral reverse pn-diode in the MOSFET ISM Pulsed-Source Current - - 26 VSD Diode Forward Voltage - - 1.5 V TJ=25C, IS=6.6A, VGS=0V Reverse Resovery Time - 110 - ns Reverse Resovery Charge - 0.51 - C TJ=25C, IF=6.6A, VDD=160V diF/dt=100A/s Qrr Notes: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature L=2.5mH, IAS=6.6A, VDD=50V, RG=25, Starting TJ =25C ISD 6.6A, di/dt 300s, VDD BVDSS, Starting TJ =25C Pulse Test: Pulse Width 300s, Duty Cycle 2% Essentially Independent of Operating Temperature 2 Units QFET N-CHANNEL FQP7N20 Fig 1. Output Characteristics ID , Drain Current [A] 10 Bottom : VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 10 ID , Drain Current [A] Top : 1 Fig 2. Transfer Characteristics 0 10 150E 0 25E 10 -55E O Note 1. VDS = 40V 2. 250is Pulse Test O Note : 1. 250is Pulse Test 2. TC = 25E -1 10 -1 -1 0 10 4.0 10 1 10 2 10 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 3.5 3.0 VGS = 10V 2.5 2.0 VGS = 20V 1.5 1.0 1 10 0 10 150E 0.0 -1 0 3 6 9 12 15 10 0.2 0.4 0.6 ID , Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 12 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 400 Coss 300 O Note ; 1. VGS = 0 V 2. f = 1 MHz 200 Crss 100 VDS = 40V VDS = 100V 10 VGS , Gate-Source Voltage [V] 500 Capacitances [pF] O Note : 1. VGS = 0V 2. 250is Pulse Test 25E 0.5 VDS = 160V 8 6 4 2 O Note : ID = 6.6 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] 0 0 2 4 6 8 10 QG, Total Gate Charge [nC] 3 FQP7N20 QFET N-CHANNEL Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 O Note : 1. VGS = 0 V 2. ID = 250 iA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 O Note : 1. VGS = 10 V 2. ID = 3.3 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 2 8 10 Operation in This Area is Limited by R DS(on) 6 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 10 1 ms 10 ms DC 0 10 O Notes : 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 0 25 10 0 1 10 2 10 10 50 75 100 C] TC, Case Temperature [[E] VDS, Drain-Source Voltage [V] 10 D = 0.5 0 0.2 O N o t e s : 1 . Z e J C(t ) = 1 . 9 8 E /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z e J C(t ) 0.1 10 0.05 -1 PDM 0.02 e JC ( t) , T h e rm a l R e s p o n s e Fig 11. Thermal Response 0.01 t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] 4 10 0 10 1 125 150 QFET N-CHANNEL FQP7N20 Fig 12. Gate Charge Test Circuit & Waveform 50K 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time 5 FQP7N20 QFET N-CHANNEL Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop 6 VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QS Quiet Series SuperSOT-3 SuperSOT-6 SuperSOT-8 TinyLogic UHC VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.