MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB Siliconix = IRF641 = IRF642 = IRF643 IRF240 = IRF244 = IRF242 = IRF243 IRF240 = IRF241 = IRF242 = IRF243 as IRF640 = IRF644 = IRF642 = IRF643 Siliconix . Ad d Information 200V N-Channel Enhancement-Mode vanee These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. Product Summar FEATURES at y ar = No Second Breakdown Number | BVoss | "osiom | 'o Package a High Input Impedance. IRF240 200 a Internal Drain-Source Diode IRFD41 150 0.180 | 18A u Very Rugged: Excellent SOA InF242 | 200 dL TOs w Extremely Fast Switching TRF DA3 150 o.220" | 16a IRF640 200 0.18 18A BENEFITS IRF641 150 me 70-2208 m Reduced Component Count IRF642 200 0.200 tea u Improved Performance IRF643 150 a Simpler Designs D u Improved Reliability a s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) . Drain-Source Voitage Gate Current (Peak)................-. a1. SA IRF240, 242, 640, 642.............000 ee -200V ; IRF241, 243,641,.643................... 4150V' Gate Source Voltage... eee ee eee +40V : Total Power Dissipation ................. 125W | Drain-Gate Voltage oe : IRF240, 242, 640,642......... ces cece ee 200V Linear Derating Factor .............. 1.0W/C IRF241, 243, 641,643............ 020000 150V Operating and Storage Drain Current Temperature .............--. 55 to +150C Continuous IRF240, 241,640,641................ + 18A Notes: IRF242, 243, 642,643..............0. +16A 1. Limited by package dissipation. Pulsed2.. 0... cece eee eee ees +72A 2. Pulse test 80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS sm 920 (051) 270 . 2%. wae Bre 8 a 0.135 max | MAX { 13.429} ~ 1 4 FF T 0.043 7.092) 0.312 SEATING aos 709057 aN S00 faa] PLANE [ag 197 way pia Stet (4.09 260 0876 (97.145) 1177 (29.896) ve o35 aess (166377 | 0.188 4__AZESN (lec ; [2898 sae fay {Ot a8 a | wa] 0.181 (4.089) \ 0.228 (5.775) a! os25 0.151 (3.838) 100 esa _,| } ert) + Pin 1 Gate 0.205 15-207) sorron view (79.398) BMAX 1 Ge) 500 (14.23) Pin 1 Gate Pin 2 Source ~ "960 (76.51) 1 Pin 2 & TAB Drain CASE Drain 10-3 TO-220 AB Pin 3 Source 2-14 Siliconix ELECTRICAL CHARACTERISTICS (Ic =25C unless otherwise noted) . Part Parameter Number Min | Max Unit Test Conditions Static IRF240, 242 200 Drain-Source Breakdown IRF640, 642 BV Vv Vas = 0, lp = 250, PSS Voltage | IRF241, 243 | 50 a8 =0; 1o= 250uA , IRF641, 643 Vestn) Gate Threshold Voltage All 2.0 4.0 Vv Ves= Vos, Ip=1mA less Gate-Body Leakage All +100 | nA Ves = + 20V, Vps=0 0.25 Vps= Rated Vg, Veg = 0 loss Zero Gate Voltage Drain Current All mA pS DS gs - ; 1.0 Vps = Rated Vos, Vag = 0, Te = 125C Ipyon) On-State Drain Current All 18 A Vos = 25V, Vag = 10V (Note 1) IRF240, 241 0.18 Static Drain-Source On-State IRF640, 641 . : osior) Resistance IRF242, 243 0.22 @ | Vas =10V, tp = 10A (Note 1) IRF642, 643 . Dynamic Os Forward Transconductance All 6.0 Ss Vos = 25V, Ip = 10A (Note 1) Ciss Input Capacitance 1600 , Coss Output Capacitance Alt 750 pF Ves = 0, Vos = 25V, f= 1 MHz Cres Reverse Transfer Capacitance 300 . tayon) Turn-On Delay Time All 30 t, Rise Time All 60 ng | Yoo= 75, Ip=10A, RL=7.50, Rg= 4.70 taorn Turn-Off Delay Time All 80 (Fig 1) t Fall Time All 60 Diain-Source Diode Characteristics Typ Vsp Forward On Voltage All -2.0 Vv Is = -18A Ves = 0 (Note 1) ter Reverse Recovery Time All 425 ns Ip =-18A, Vag = 0, di/dt = 100A/us Note: 1. Pulse test: 80 us to 300 us, 1% duty cycle. TEST CIRCUITS FIGURE 1 Switching Test Circuit FIGURE 2 Reverse Recovery Test Circuit Ne 502 difdt ADJUST (1-27 H) tt 0.5 T0'50 uF IN4933 TP ~ ver ADsUST , < | ~ sq j + , 2400 IN4001 4000 ,.F>= 2 $ PE | | ciRcurt. - 4 PULSE UNDER R = 0.259 [@eneraron| LEST L = 0.01 pH P.W.= Tus Cg <50 pF DUTY CYCLE = 1% vi _ nae WAY IN4723 | r 2N4204 AY 1 SCOPE FROM TRIGGER CKT ; Siliconix voidl = 779d! = b79sal = OV9dal evcidl = cycidl = bycddl = Oddi