2011-09-21
1
BF799W
NPN Silicon RF Transistor
• For linear broadband amplifier
application up to 500 MHz
• SAW filter driver in TV tuners
• Pb-free (RoHS compliant) package
1
2
3
Type Marking Pin Configuration Package
BF799W LKs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 30
Collector-base voltage VCBO 30
Emitter-base voltage VEBO 3
Collector current IC35 mA
Base current IB10
Total power dissipation
TS = 107 °C
Ptot 280 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤ 155 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-09-21
2
BF799W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 20 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - -
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 3 - -
Collector-base cutoff current
VCB = 20 V, IE = 0
ICBO - - 100 nA
DC current gain
IC = 5 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
hFE
35
40
95
100
-
250
-
Collector-emitter saturation voltage
IC = 20 mA, IB = 2 mA
VCEsat - 0.1 0.3 V
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
VBEsat - - 0.95
AC characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
IC = 20 mA, VCE = 8 V, f = 100 MHz
fT
-
-
800
1100
-
-
MHz
Output capacitance
VCB = 10 V, IE = 0 mA, f = 1 MHz
Cob - 0.96 - pF
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 0.7 -
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce - 0.28 -
Noise figure
IC = 5 mA, VCE = 10 V, f = 100 MHz,
ZS = 50 Ω
F- 3 - dB
Output conductance
IC = 20 mA, VCE = 10 V, f = 35 MHz
g22e - 60 - µS
2011-09-21
3
BF799W
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
200
220
240
mW
300
Ptot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-21
4
BF799W
Collector-base capacitance Ccb = f (VCB)
f = 1 MHz
0
EHT07117BF 799
0.5
1.0
pF
1.5
20V10
V
CB
0
cb
C
Transition frequency fT = f (IC)
f = 100MHz
0
0
EHT07116BF 799
20 mA 50
200
400
600
800
1000
MHz
1200
10 30 40
V
CE
= 5
2
V
V
Ι
C
T
f
2011-09-21
5
BF799W
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
2011-09-21
6
BF799W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
