2N5062G - ON SEMICONDUCTOR - Datasheet.Directory

September, 2011 − Rev. 10

1Publication Order Number:

2N5060/D

2N5060 Series

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO−92/TO-226AA package which

is readily adaptable for use in automatic insertion equipment.

Features

•Sensitive Gate Trigger Current − 200 mA Maximum

•Low Reverse and Forward Blocking Current − 50 mA Maximum,

TC = 110°C

•Low Holding Current − 5 mA Maximum

•Passivated Surface for Reliability and Uniformity

•These are Pb−Free Devices

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 110°C, Sine Wave,

50 to 60 Hz, RGK = 1 kW) 2N5060

2N5061

2N5062

2N5064

VDRM,

VRRM 30

100

200

On-State Current RMS (180° Conduction

Angles; TC = 80°C)

IT(RMS) 0.8 A

*Average On-State Current

(180° Conduction Angles)

(TC = 67°C)

(TC = 102°C)

IT(AV)

0.51

0.255

*Peak Non-repetitive Surge Current,

TA = 25°C (1/2 cycle, Sine Wave, 60 Hz)

ITSM 10 A

Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s

*Average On-State Current

(180° Conduction Angles) (TC = 67°C)

(TC = 102°C)

IT(AV) 0.51

0.255

*Forward Peak Gate Power (Pulse Width v

1.0 msec; TA = 25°C)

PGM 0.1 W

*Forward Average Gate Power

(TA = 25°C, t = 8.3 ms)

PG(AV) 0.01 W

*Forward Peak Gate Current (Pulse Width

v 1.0 msec; TA = 25°C)

IGM 1.0 A

*Reverse Peak Gate Voltage (Pulse Width

v 1.0 msec; TA = 25°C)

VRGM 5.0 V

*Operating Junction Temperature Range TJ−40 to

+110

°C

*Storage Temperature Range Tstg −40 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*Indicates JEDEC Registered Data.

SILICON CONTROLLED

RECTIFIERS

0.8 A RMS, 30 − 200 V

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

TO−92

CASE 29

STYLE 10

50xx Specific Device Code

Y = Year

WW = Work Week

MARKING

DIAGRAM

50xx

YWW

PIN ASSIGNMENT

Gate

Anode

Cathode

http://onsemi.com

123

2N5060 Series

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction−to−Case (Note 2) RqJC 75 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the

curved surface.

*Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current (Note 3)

(VAK = Rated VDRM or VRRM)T

C = 25°C

TC = 110°C

IDRM, IRRM

−

ON CHARACTERISTICS

*Peak Forward On−State Voltage (Note 4)

(ITM = 1.2 A peak @ TA = 25°C)

VTM − − 1.7 V

Gate Trigger Current (Continuous DC) (Note 5)

*(VAK = 7.0 Vdc, RL = 100 W)T

C = 25°C

TC = −40°C

IGT

−

200

350

Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C

*(VAK = 7.0 Vdc, RL = 100 W)T

C = −40°C

VGT −

−

0.8

1.2

*Gate Non−Trigger Voltage

(VAK = Rated VDRM, RL = 100 W)T

C = 110°C

VGD

0.1 − −

Holding Current (Note 3) TC = 25°C

*(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°C

IH−

−

5.0

Turn-On Time

Delay Time

Rise Time

(IGT = 1.0 mA, VD = Rated VDRM,

Forward Current = 1.0 A, di/dt = 6.0 A/ms

−

3.0

0.2

−

Turn-Off Time

(Forward Current = 1.0 A pulse,

Pulse Width = 50 ms,

0.1% Duty Cycle, di/dt = 6.0 A/ms,

dv/dt = 20 V/ms, IGT = 1 mA) 2N5060, 2N5061

2N5062, 2N5064

−

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(Rated VDRM, Exponential, RGK = 1 kW)

dv/dt −30 −V/ms

*Indicates JEDEC Registered Data.

3. RGK = 1000 W is included in measurement.

4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.

5. RGK current is not included in measurement.

2N5060 Series

http://onsemi.com

+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak on State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

120

100

110

0 0.1 0.2 0.3 0.4

130

0.5

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

110

130

0 0.1 0.2 0.3 0.4

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

A, MAXIMUM ALLOWABLE AMBIENT

TEMPERATURE ( C)

a = 30°

a = 30°60°90°

90°

120°

120°180°

CASE MEASUREMENT

POINT - CENTER OF

FLAT PORTION

60°

180°

TYPICAL PRINTED

CIRCUIT BOARD

MOUNTING

a = CONDUCTION ANGLE

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

CURRENT DERATING

2N5060 Series

http://onsemi.com

P(AV), MAXIMUM AVERAGE POWER

DISSIPATION (WATTS)

5.0

0.05

0.01

0.02

0 0.5 1.0 1.5 2.0

3.0

2.5

vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)

0.07

0.03

0.1

0.2

0.3

0.5

0.7

1.0

2.0

5.0

25°C

TJ = 110°C

7.0

1.0

3.0

2.0

1.0 2.0 3.0 5.0 7.0 10 20 50 70 100

0.2

0.4

0.6

0.1 0.4

0.8

0 0.2 0.5

a = CONDUCTION ANGLE

0.3

NUMBER OF CYCLES

IT(AV), AVERAGE ON‐STATE CURRENT (AMP)

iT, INSTANTANEOUS ON‐STATE CURRENT (AMP)

ITSM , PEAK SURGE CURRENT (AMP)

a = 30°

60°90°

120°180°

Figure 3. Typical Forward Voltage

Figure 4. Maximum Non−Repetitive Surge Current

Figure 5. Power Dissipation

CURRENT DERATING

2N5060 Series

http://onsemi.com

0.7

0.3

0.4

0.5

0.6

0.8

VAK = 7.0 V

RL = 100

RGK = 1.0 k

3.0

0.8

0.4

0.6

1.0

2.0

500-75 -50 -25

4.0

25 10075 110

TJ, JUNCTION TEMPERATURE (°C)

2N5060,61

100

VAK = 7.0 V

RL = 100

RGK = 1.0 k

0.2

0.5

1.0

2.0

5.0

200

VAK = 7.0 V

RL = 100

2N5062‐64

2N5060‐61

TYPICAL CHARACTERISTICS

500−75 -50 -25 25 10075 110

TJ, JUNCTION TEMPERATURE (°C)

500-75 -50 -25 25 10075

TJ, JUNCTION TEMPERATURE (°C)

VG, GATE TRIGGER VOLTAGE (VOLTS)

IGT, GATE TRIGGER CURRENT (NORMALIZED)

IH, HOLDING CURRENT (NORMALIZED)

2N5062‐64

0.02 0.2 20105.02.01.00.050.010.002 0.005 0.5

0.02

0.01

0.5

0.1

0.05

0.1

0.2

t, TIME (SECONDS)

1.0

r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED

110

Figure 6. Thermal Response

Figure 7. Typical Gate Trigger Voltage Figure 8. Typical Gate Trigger Current

Figure 9. Typical Holding Current

2N5060 Series

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

2N5060G TO−92

(Pb−Free)

5000 Units / Box

2N5060RLRA TO−92 2000 / Tape & Reel

2N5060RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N5060RLRMG TO−92

(Pb−Free)

2000 / Ammo Pack

2N5061G TO−92

(Pb−Free)

5000 Units / Box

2N5061RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N5062G TO−92

(Pb−Free)

5000 Units / Box

2N5062RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N5064RLRMG TO−92

(Pb−Free)

2000 / Ammo Pack

2N5064RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N5064G TO−92

(Pb−Free)

5000 Units / Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N5060 Series

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 ---

N2.04 2.66

P1.50 4.00

R2.93 ---

V3.43 ---

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

2N5060/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative