CBETO-92
C
B
E
BC
C
SOT-223
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
2001 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N3906 *MMBT3906 **PZT3906
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resi s tance, J unc tion to Case 83.3 °C/W
RθJA Thermal Resi s tance, Junction to Ambie nt 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2N3906 MMBT3906
SOT-23
Mark: 2A
PZT3906
2N3906 / MMBT3906 / PZT3906
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N3906/MMBT3906/PZT3906, Rev A
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
60
80
100
60
30
300
VCE
(
sat
)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.25
0.4 V
V
VBE
(
sat
)
Base-Emitter Saturation Voltag e IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cobo Output Capacit ance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.5 pF
Cibo Input Capacitance VEB = 0. 5 V, IC = 0,
f = 100 kHz 10.0 pF
NF Noise Figure IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7 kHz 4.0 dB
tdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
t
r
Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
tsStorage Time VCC = 3.0 V, IC = 10mA 225 ns
t
f
Fa ll Time IB1 = IB2 = 1.0 mA 75 ns
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
2N3906 / MMBT3906 / PZT3906
Typical Characteristics
Common-B ase Op en Circuit
Input and O ut put Capacitance
vs Rever se Bias Vo l tage
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
PNP General Purpose Amplifier
(continued)
Typi cal Pu lsed Cu rr en t Gai n
vs Colle c t or Curre n t
0.1 0.2 0.5 1 2 5 10 20 50 100
50
100
150
200
250
I - COLLECTOR C URRENT (mA )
h - T YPICA L PULSED CURRENT GAI N
C
FE
125 ° C
25 ° C
- 40 °C
V = 1.0V
CE
Colle c t or- E mit te r Sat ura t ion
V olta ge vs Colle c tor Current
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRE NT (mA)
V - COLLEC TOR EMITTE R VOLTAGE (V)
C
CESAT
25 °C
- 4 0 °C
125°C
β= 10
B ase-Emitter Saturatio n
Vo lt ag e vs C o llector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
Collector Current
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u toff Cu r rent
vs A mb ient Temp er at u re
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIE NT TEMP E RATU RE ( C)
I - COLLECTOR CURR ENT (nA)
A
CBO
°
V = 2 5V
CB
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - PO WER DISSIPATION ( W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figur e vs Fr eque ncy
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOIS E FI G URE ( d B)
I = 100 µA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 µA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 200Ω
CS
Nois e F igure vs Source R e sis t a nce
0.1 1 10 100
0
2
4
6
8
10
12
R - SO URCE RE SIS TANCE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 µA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collec to r C urren t
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I = tr
t
s
B1
C
B2 Ic
10
tf
td
Tu rn On and Turn Of f Tim es
vs Collector Curren t
1 10 100
1
10
100
500
I - CO LL ECT OR CURR ENT (mA )
TIME ( nS)
I = I =
t
off
B1 B2 Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1 Ic
10
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)
2N3906 / MMBT3906 / PZT3906
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Input Impeda n c e
0.1 1 10
0.1
1
10
I - COL LE CT OR CU RR ENT ( mA )
h - INPUT IMPEDANCE ( k )
V = 10 V
CE
C
ie
f = 1.0 kHz
Ω
Outp ut Admi tta n ce
0.1 1 10
10
100
1000
I - COL LECTOR CURRENT (mA)
h - OUTPUT ADMITTA NCE ( m hos)
V = 10 V
CE
C
oe
f = 1.0 kHz
µ
Cur rent Gain
0.1 1 10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kH z
Vol ta ge Feed back Ratio
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RA TIO (x 10 )
C
re
_4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
