2-200 MHz VHF AM/FM FETs These RF TMOS Field-Effect Transistors are designed for VHF military and commercial aircraft radio transmitters. These transistors are fully characterized at 150 MHz. Pout Pin | Gps a Output Power Input Power | = Minimum Minimum Vop. Wate ___sWatts Gain de Efficiency % | Supply Voltage Package MRF 134 ; 0.40 1 50 28 211-07 MRF 136 15 0.75 13 50 28 211-07 MRF 137 30 1.9 12 50 28 211-07 MRF171 45 2.8 12 50 28 211-07 MRF 172 80 8.0 10 50 28 21-14 MRF 174 125 15.8 9.0 50 28 211-14 2-400 MHz VHF/UHF AM/FM FETs These RF TMOS Field-Effect Transistors are designed for VHF/UHF military and commercial aircraft radio transmitters. These transistors are fully characterized at 400 MHz. Co Device MRF161 MRF 162 MRF 163 | Pot | Output Power : Watts _ Pin | Gos n input Power Minimum Minimum Voo Watts GaindB =__sEfficiency % Supply Voltage Package 0.40 11 45 28 r 244-04 1.2 11 45 28 244-04 2.5 10 45 28 244-04 MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-74