VN0545 VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) TO-39 TO-92 Die 450V 60 150mA -- VN0545N3 VN0545ND 500V 60 150mA VN0550N2 VN0550N3 VN0550ND MIL visual screening available Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices Package Options Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) DGS Absolute Maximum Ratings TO-39 Case: DRAIN Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55C to +150C 300C Note: See Package Outline section for dimensions. * Distance of 1.6 mm from case for 10 seconds. 7-165 VN0545/VN0550 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TC = 25C jc C/W ja C/W IDR* IDRM TO-39 100mA 300mA 6.0W 20.8 125 100mA 300mA TO-92 50mA 250mA 1.0W 125 170 50mA 250mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage VN0550 500 VN0545 450 VGS(th) Gate Threshold Voltage VGS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current ID(ON) Typ 2 -5.0 RDS(ON) Static Drain-to-Source ON-State Resistance RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance COSS V VGS = 0V, ID = 1mA V VGS = VDS , ID = 1mA mV/C VGS = VDS , ID = 1mA nA VGS = 20V, VDS = 0V 10 A VGS = 0V, VDS = Max Rating 1 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125C mA 350 45 50 Conditions 100 100 150 Unit 4 -3.8 ON-State Drain Current Max 40 60 1 1.7 100 55 Common Source Output Capacitance 8 10 CRSS Reverse Transfer Capacitance 2 5 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 10 tf Fall Time 10 VSD Diode Forward Voltage Drop trr Reverse Recovery Time VGS = 5V, ID = 50mA VGS = 10V, ID = 50mA %/C VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA m 45 VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V Symbol pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V, ID = 150mA, RGEN = 25 0.8 V VGS = 0V, ISD = 0.5A 300 ns VGS = 0V, ISD = 0.5A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-166 VN0545/VN0550 Typical Performance Curves Output Characteristics Saturation Characteristics 0.5 0.25 VGS = 10V 8V 0.4 0.20 VGS = 10V ID (amperes) ID (amperes) 6V 0.3 0.2 0.1 8V 6V 0.15 0.10 0.05 4V 4V 0 0 0 10 20 30 40 0 50 2 4 6 8 10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 0.40 10 VDS = 25V 8 TA = -55C 0.24 TO-39 PD (watts) GFS (siemens) 0.32 TA = 25C 0.16 TA = 125C 0.08 6 4 2 TO-92 0 0 0 0.1 0.2 0.3 0.4 0 0.5 25 50 ID (amperes) 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) 1.0 TO-39 (pulsed) TO-39 (DC) ID (amperes) 75 TC (C) 0.1 TO-92 (DC) 0.01 TC = 25C PD = 6W TC = 25C 0.8 0.6 0.4 TO-92 PD = 1W 0.2 TC = 25C 0 0.001 1 TO-39 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-167 1 10 VN0545/VN0550 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 100 1.1 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 80 1.0 60 VGS = 10V 40 20 0.9 0 -50 0 50 100 0 150 0.1 0.2 0.3 0.4 0.5 ID (amperes) Tj (C) Transfer Characteristics V(th) and RDS Variation with Temperature 0.5 TA = -55 C 0.3 25C 150C 0.2 1.4 1.2 V(th) @ 1mA 1.0 1.0 0.8 0.6 0.6 0.2 0.1 0 0 2 4 6 8 -50 10 0 50 VGS (volts) Capacitance vs. Drain-to-Source Voltage 150 Gate Drive Dynamic Characteristics 100 10 VDS = 10V f = 1MHz 8 105 pF VGS (volts) 75 C (picofarads) 100 Tj(C) CISS 50 6 VDS = 40V 4 112 pF 25 2 COSS 50 pF CRSS 0 0 0 10 20 30 0 40 0.2 0.4 0.6 QG (nanocoulombs) VDS (volts) 7-168 0.8 1.0 RDS(ON) (normalized) RDS(ON) @ 10V, 50mA VGS(th) (normalized) ID (amperes) 0.4 1.8 1.4 VDS = 25V