MBR20H200CT, MBRF20H200CT, SB20H200CT-1 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 A TO-220AB FEATURES ITO-220AB * Guardring for overvoltage protection * Low power loss, high efficiency * Low forward voltage drop * High frequency operation * Solder dip 275 C max., 10 s per JESD 22-B106 1 2 3 1 2 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 MBRF20H200CT MBR20H200CT TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection application. MECHANICAL DATA 1 2 Case: TO-220AB, ITO-220AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade 3 SB20H200CT-1 PIN 1 PIN 2 PIN 3 CASE Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) Mounting Torque: 10 in-lbs maximum 2 x 10 A VRRM 200 V IFSM 290 A VF 0.75 V TJ max. 175 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR20H200CT UNIT Maximum repetitive peak reverse voltage VRRM 200 V Working peak reverse voltage VRWM 200 V Maximum DC blocking voltage VDC 200 V Maximum average forward rectified current total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) 20 10 A IFSM 290 Peak repetitive reverse current per diode at tp = 2 s, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 s waveform) ERSM 20 mJ Non-repetitive avalanche energy per diode at 25 C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage human body model air discharge: C = 100 pF, R = 1.5 k VC 25 kV Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Revision: 21-Nov-12 A dV/dt 10 000 V/s TJ, TSTG - 65 to + 175 C VAC 1500 V Document Number: 88786 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H200CT, MBRF20H200CT, SB20H200CT-1 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL IF = 10 A TC = 25 C IF = 10 A TC = 125 C IF = 20 A TC = 25 C IF = 20 A VF (1) TC = 125 C 0.88 0.65 0.75 0.87 0.97 4.0 V, 1 MHz UNIT V 0.85 IR (1) TJ = 125 C Typical junction capacitance MAX. 0.81 0.74 TJ = 25 C Maximum reverse current per diode at working peak reverse voltage TYP. CJ 5.0 A 1.0 mA 250 pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR MBRF SB UNIT RJC 2.0 4.0 2.0 C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE Tube TO-220AB MBR20H200CT-E3/45 2.06 45 50/tube ITO-220AB MBRF20H200CT-E3/45 2.20 45 50/tube Tube TO-262AA SB20H200CT-1E3/45 1.58 45 50/tube Tube 10 100 Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 25 Average Forward Current (A) Average Forward Current (A) MBR, MBRB 20 MBRF 15 10 5 0 25 50 75 100 125 150 175 350 325 300 275 250 225 200 175 150 125 100 75 50 25 0 1 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 21-Nov-12 Document Number: 88786 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H200CT, MBRF20H200CT, SB20H200CT-1 www.vishay.com Vishay General Semiconductor 10 000 TJ = 175 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 C TJ = 75 C 1 TJ = 25 C 0.1 0.1 1000 100 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 000 100 1000 TJ = 175 C 100 TJ = 125 C Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TJ = 75 C 10 1 TJ = 25 C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 21-Nov-12 10 MBRF 1 0.1 0.01 MBR, MBRB 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 88786 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H200CT, MBRF20H200CT, SB20H200CT-1 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.343 (8.70) TYP. 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331(8.40) TYP. 1 0.634 (16.10) 0.618 (15.70) PIN 2 3 0.118 (3.00) TYP. 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.100 (2.54) TYP. 0.024 (0.60) 0.018 (0.45) ITO-220AB 0.408 (10.36) 0.392 (9.96) 0.138 (3.50) 0.122 (3.10) 0.630 (16.00) 0.614 (15.60) 1 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 1.29 (3.28) DIA. 1.21 (3.08) 0.270 (6.88) 0.255 (6.48) 0.320 (8.12) 0.304 (7.72) 0.264 (6.70) 0.248 (6.50) PIN 2 3 0.633 (16.07) 0.601 (15.67) 0.117 (2.96) 0.101 (2.56) 0.396 (10.05) 0.372 (9.45) 0.039 (1.00) 0.024 (0.60) 0.058 (1.47) MAX. 0.100 (2.54) TYP. 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. TO-262AA 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.039 (1.00) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 3 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. Revision: 21-Nov-12 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. Document Number: 88786 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000