waar SBL2030CTSBL2060CT VISHAY Vishay Lite-On Power Semiconductor 20A Schottky Barrier Rectifier Features @ Schottky barrier chip @ Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 95 9630 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage SBL2030CT | Varm 30 Vv =Working peak reverse voltage SBL2035CT | =Vrawm 35 Vv =DC Blocking voltage SBL2040CT =VR 40 V SBL2045CT 45 Vv SBL2050CT 50 Vv SBL2060CT 60 Vv Peak forward surge current lesm 250 A Average forward current Te=95C IFay 20 A Junction and storage temperature range T=Tstg_ | -65...4150 | C Electrical Characteristics = 25C Forward voltage Ip=10A, Tc=25C | SBL2030CT-SBL2045CT Ve 0.55/| V SBL2050CT-SBL2060CT Ve 0.75 | V Reverse current Tce=25C IR 1.0 | mA Te=1 00C IR 50 mA Diode capacitance | VR=4V, f=1MHz Cp 650 pF Thermal resistance | T_=const. Rthuc 2.8 KAW junction to case Rev. A2, 24-Jun-98 1 (4) SBL2030CT-SBL2060CT Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) leay Average Forward Current (A) 15363 20 \ , \ 0 50 100 150 Tamb Ambient Temperature (C ) Figure 1. Max. Average Forward Current vs. |- Forward Current (A) 18364 Ambient Temperature 40 $BL2030CT SBL2045CT 10 1. T SBL2060CT Tj = 25C |r Pulse Width = 300 ps 2% Duty Cycle 01 01 0.3 05 0.7 0.9 11 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage legy7 Peak Forward Surge Current (A) 18365 300 TTT T T_TTTTT 8.3 ms Single Half-Sine-Wave JEDEC method 250 200 150 N N Ny 100 PS PAL 50 LH 0 1 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 4000 L a cI = 1000 w a w Oo 3G 2 a I a Oo 100 0.1 1.0 10 100 15366 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 < E 10 & Tj= 100C e 2 3 T= 75C 1.0 9 o > oc | 0.1 = Tj=25C 0.01 0 40 80 120 15367 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98 SBL2030CTSBL2060CT VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AB Dim Min Max ee A] 14.22 (5.88 aan B 9.65 10.67 ( 254 3.43 2 D Bh 6.86 E - 6.25 be G | 12.70 14.73 . H 2.29 2.79 | J 0.51 114 Lu kK] 03.53 04.09 WD L 3.56 483 M 114 1.40 N 0.30 0.64 P 7.03 2.92 Al Dimensions in mm N J oll P H | + technical drawings according to DIN specifications 14468 Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) SBL2030CTSBL2060CT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98