Sep.2000
T
AC
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
V
V
V
V
V
V
10.
11.
12.
13.
14.
15.
16.
U
U
VV
W
W
WPC
UPI
VPI
WPI
NC
NI
P
N
P
P
N
N
UPC
FO
VVPC
17.
18.
19.
NC
WFO
O
VF
OUF
B
S
M
M
AD
AG
AG K J J
E
UU
U
AB
Q
AB
R
F
A
U
D
X
P
X
W
W
C
78 9
10
11 13 151234 56
N
VW U
BP
AA - THD (6 TYP.)
Z - DIA. (4 TYP.)
AD (15 TYP.)
12 14 16 18
17 19
Y (4 TYP.)
N
AE
G H L
AF
V
2.54 MM DIA. (2 TYP.)
(19 TYP.)
0.5 MM SQ. PIN
V
VCC
SI
GND GND
OUT UPI
V
UFO
UP
UPC
FO
IN
VCC
SI
GND GND
OUT
FO
IN
VCC
SI
GND GND
OUT
FO
IN
V
V
FO
V
V
FO
VPI
V
VP
VPC
WPI
W
WP
WPC
VCC
SI
GND GND
OUT
FO
IN
VCC
SI
GND GND
OUT
FO
IN
UN
VCC
SI
GND GND
OUT
FO
IN
V
V
W
N
V
NI
N
NC
TEMP
NC
FO
PUVWNNC
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Shor t Circuit
– Over Current
– Ov er Temperature
– Under V oltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM100CSA060 is a 600V,
100 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 100 60
Dimensions Inches Millimeters
A 4.33±0.04 110.0±1.0
B 3.74±0.02 95.0±0.5
C 3.50±0.04 89.0±1.0
D 3.27 83.0
E 2.91±0.02 74.0±0.5
F 2.44 62.0
G 1.28 32.6
H 1.24 31.6
J 1.02 26.0
K 0.94 24.0
L 0.87 +0.06/-0 22.0 +1.5/-0.0
M 0.79 20.0
N 0.76 19.4
P 0.75 19.0
Q 0.708 17.98
R 0.670 17.02
Dimensions Inches Millimeters
S 0.67 17.0
T 0.52 13.2
U 0.39 10.0
V 0.27 7.0
W 0.30 7.5
X 0.24 6.0
Y 0.24 Rad. Rad. 6.0
Z 0.22 Dia. Dia. 5.5
AA Metric M5 M5
AB 0.127 3.22
AC 0.10 2.6
AD 0.08 2.0
AE 0.07 1.8
AF 0.06 1.6
AG 0.02±0.01 0.5±0.3
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Outline Drawing and Circuit Diagram
Sep.2000
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N · m
Mounting Torque, M5 Main Terminal Screws — 1.47 ~ 1.96 N · m
Module Weight (Typical) — 550 Grams
Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied betw een VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC)V
CIN 20 Volts
Fault Output Supply Voltage
(Applied between U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
, F
O
-V
NC
)
VFO 20 Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Ter minal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN =15V) VCES 600 Volts
Collector Current, ±IC100 Amperes
Peak Collector Current, ±ICP 200 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC403 Watts
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 158 240 — Amperes
Short Circuit Trip Level Inverter Par t SC -20°C ≤ T ≤ 125°C, VD = 15V — 360 — Amperes
Over Current Delay Time t off(OC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Lev el 1 11 1 18 125 °C
OTrReset Level — 100 — °C
Supply Circuit Under Voltage Protection UV Tr i p Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — Volts
Supply Voltage VDApplied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, VCIN = 15V, V N1-VNC —4055mA
VD = 15V, VCIN = 15V, VXP1-VXPC —1318mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA
VCE = VCES, Tj = 125°C——10mA
Diode Forward Voltage VEC -IC = 100A, V D = 15V, VCIN = 15V — 2.2 3.3 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 100A — 1.8 2.7 Volts
VD = 15V, V CIN = 0V, IC = 100A, — 1.75 2.63 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.4 0.8 2.0 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs
tC(on) VCC = 300V, IC = 100A — 0.4 1.0 µs
toff Tj = 125°C — 2.0 2.9 µs
tC(off) — 0.6 1.2 µs
Control Sector
Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.31 °C/Watt
Rth(j-c)F Each FWDi — — 0.7 °C/Watt
Contact Thermal Resistance R th(c-f) Case to Fin Per Module, — — 0.027 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage V CC Applied across P-N Terminals 0 ~ 400 Volts
VDApplied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, V VP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VDVolts
UN · VN · WN-VNC
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 2.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
0
1
2
3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SATURATION VOLTAGE VCE(sat), (VOLTS)
0 40 20080 120 160
VD = 15V
Tj = 25oC
Tj = 125oC
VCIN = 0V
0
1
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
12 14 16 18 20
IC = 100A
Tj = 25oC
Tj = 125oC
VCIN = 0V
3
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
012
03
40
80
120
160 Tj = 25oC
VCIN = 0V
VD = 17V
15
13
100101102
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, ton, toff, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
ton
100
101
toff
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100101102
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, tc(on), tc(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
tc(on)
100
101
tc(off)
VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100101102
10-2
COLLECTOR REVERSE CURRENT, –IC, (AMPERES)
REVERSE RECOVERY TIME, trr, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10-1
100VCC = 300V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
101
102
Irr
trr
001.0 2.5
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR REVERSE CURRENT, –IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
101
102
0.5 1.5 2.0
Tj = 25oC
Tj = 125oC
VD = 15V
VCIN = 15V
40
60
80
100
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
12 14 16 18 20
Tj = 25oC
00
40
60
120
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 50 100 150-50
VD = 15V
100
80
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA060
FLA T-BASE TYPE
INSULATED PACKAGE
0
40
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
-50 0 50 100 150
VD = 15V
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
-50 150050100
UVt
UVr
0
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.31oC/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.70oC/W
10-2
10-3
