TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short), 4N26(Short), 4N27(Short), 4N28(Short) AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LOGIC / DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. 4 3 i HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. & RELAY CONTACT MONITOR. 2 ro 1 2 3 The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a 7.12#0.25, 58 7.62 +0.25 gallium arsenide infrared emitting diode coupled with a silicon a phototransistor in a dual in-line package. @ 3 | Sef ; ; : 0.5 + 0.1 1.240.152 @ Switching Speeds : 8us (Typ.) = 7.85-~8.80 54 +0. a @ DC Current Transfer Ratio : 100% (Typ.) eoeeoes @ JIsolation Resistance : 10140 (Min.) @ Isolation Voltage : 2500Vrms (Min.) V7A8 @ UL Recognized : UL1577, File No. E67349 TOSHIBA __11-7A8 Weight : 0.4g PIN CONFIGURATIONS (Top view) iQ iG oo 5 3U [4 : ANODE : CATHODE : N.C. : EMITTER : COLLECTOR : BASE aonrr WN & 961001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-27 1/6TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Continuous) IF 80 mA Forward Current Derating Alp/C 1.07 (*) |mA/C R Peak Forward Current (Note 1) IpF 3 A -] |Power Dissipation Pp 150 mW Power Dissipation Derating APp/C 2.0 (*) mW/C Reverse Voltage VR 3 Vv @ | Collector-Emitter Voltage BVCEO 30 Vv 2 Collector-Base Voltage BVCBO 70 Vv c |Emitter-Collector Voltage BVECO 7 Vv | Collector Current (Continuous) Ic 100 mA 2 Power Dissipation P 150 mW |Power Dissipation Derating APC /C 2.0 (*) mW/C Q Storage Temperature Range Tstg 55~150 C f | Operating Temperature Range Topr 55~100 C . Lead Soldering Temperature (10s) T gol 260 C + | Total Package Power Dissipation Py 250 mW 3 Total Package Power Dissipation APp/C 3.3%) bawsc Derating (Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25C ambient. 1998-02-27 2/6TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Q |Forward Voltage VP Ip=10mA | 1.15] 145 v & | Reverse Current IR VR=3V 100 | A q Capacitance Cp V=0, f=1MHz 30; pF DC Forward Current Gain | hpgE VcE=5V, I=500nA 200 | Collector-Emitter wz [Breakdown Voltage V (BR) CEO|Ic=ImA, Ip=0 30) _ Vv |Collector-Base Breakdown _ & | Voltage 'V (BR) CBO| Ic =100nA 70); Vv oO 5 Emitter-Collector eS = _ _ & | Breakdown Voltage V (BR) ECO| 1E= 100A a Vv 5 Collector Dark Current IckoO VcE=10V 1 50 | nA Collector Dark Current IcBo Vcp=10v _ 0.1 20 | nA Collector-Emitter Capacitance CCE V=0, f=1MHz _ 10| | pF Current Transfer Ratio Iq /Ip Ip=10mA, Vop=10V 20} 100 | % Collector-Emitter Saturation Voltage VCE (sat) |Ir=50mA, IG=2mA 0.1 0.5 Vv Capacitance Input to _ _ Output Cs Vs=0, f=1MHz 0.8 pF A Isolation Resistance Rg Vg=500V, R. H.= 60% 1ou | _ a 4 BVs AC, 1 minute 2500 | | Vrms Ay Isolat AN25, 4N25A 2500 | P {setation 4N26, 4N27 BVg (*) AC, Peak 1500 | | Vpk ce | 4Na8 s 500] | AN25A AC, 1 second 1775} | Vrms . . VCE=1LOV, Ic=2mA Rise / Fall Time ty / te Ry=1009 2; ps : : VoB=10V, Ic p=50nA Rise / Fall Time ty / te Ri=1000 200 ns (*) JEDEC registered minimum BVs, however, TOSHIBA specifies a minimum BVg of 2500Vrms, 1 minute. 1998-02-27 3/6TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) ALLOWABLE FORWARD CURRENT Ip (mA) (mA) FORWARD VOLTAGE TEMPERATURE PULSE FORWARD CURRENT Ipp COEFFICIENT AVp/ATa GnV/C) 0 -20 5000 3000 1000 wo oO oe o Co Oo ray Q =) wo on Oo Oo ra Q | o io I N oo I i) ES | N o I B aD | m ND | S a If Ta 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) Irp DR PULSE WIDTH= 300s Ta=25C 10-8 10-2 10-1 DUTY CYCLE RATIO DR AVREF/ATa IPF 0.3 1 3 10 FORWARD CURRENT Ip (mA) 30 120 10 ALLOWABLE COLLECTOR POWER DISSIPATION Pc (mW) FORWARD CURRENT Ip (mA) PULSE FORWARD CURRENT Ipp (mA) Pc - Ta 0 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (@C) If VF 100 50 Ta = 25C 30 10 0.5 0.3 0.1 0.6 0.8 1.0 12 14 16 1.8 FORWARD VOLTAGE VF (V) Ipp VFP 1000 500 300 100 50 30 10 PULSE WIDTHS 10ys REPETITIVE FREQUENCY =100Hz Ta =25C 0.6 1.0 1.4 18 2.2 2.6 PULSE FORWARD VOLTAGE Vpp (V) 1998-02-27 4/6TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) Ic IF Ic/IF - IF 160 Ta=25C Ta=25C VcE=10V VcE=10V 120 ---> VoR=04V SAMPLE A ---- Vop=04V 80 49-- SAMPLE B SAMPLE A SAMPLE B CURRENT TRANSFER RATIO Ic/Ip (%) 1 3 10 30 100 300 FORWARD CURRENT Ip (nA) COLLECTOR CURRENT Ic (mA) Ic VCE Ta=25C 1 3 10 30 100 FORWARD CURRENT Ip (mA) COLLECTOR CURRENT Ic (mA) Ic Ta 0 2 4 6 8 10 1000 Ta =25C COLLECTOR-EMITTER VOLTAGE Vcog (WV) Vop=10V q 100 VCE (sat) Ta & 1 a & g 08 & 10 Ze S By 03 5 ze oO BS we st a o4 3 = e BG oc a ae 0.05 o SOL 35 0.08 wa md 3 Ro 0.01 -60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (CC) 1998-02-27 5/6TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) (eA) COLLECTOR DARK CURRENT Icgo SWITCHING TIME (ys) IcEO Ta IcEO RBE z 10 10+ > 5 BZ 3 Vop=24V = e z 1 0 & 10 S 08 5 038 he & _ a 0.1 107? 2 S 0.05 & 0.08 E 0.01 -2 5 10 100k 1M 10M wo BASE-EMITTER RESISTANCE Rep (Q) 10-8 SWITCHING CHARACTERISTICS RBE TURATED OPERATIO Ta=25C Voc=5V 10-4 Ip ot 4.3k0 Ip 0 20 40 60 80 100-120 Ge Your Vout AMBIENT TEMPERATURE Ta (C) mA oe tg +H SWITCHING CHARACTERISTICS Ry, ~ L000 TED TI a R Voc=5Vv I 2 500 q Vout g 300 m oO E B 100 50 30 10 3M 1M 300k 100k 30k 10k BASE-EMITTER RESISTANCE Rpg ({) 0.5 1 3 10 30 LOAD RESISTANCE Ry (kQ) 1998-02-27 6/6