Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series Features Small Physical Size for Microstrip Mounting @ High Reliability @ Closely Matched Junctions for High Isolation @ Three Diode Barrier Heights are Available @ Minimum Parasitics for Broadband Designs Description Each Schottky barrier beam lead Tee consists of two close- ly matched diodes connected in the classic Tee configura- tion. The diodes are formed monolithically to assure close matching of electrical characteristics such as capacitance, forward voltage and series resistance. The silicon that originally connected the diodes on the wafer is removed. The beam lead construction assures minimum parasitic capacitance, connecting lead inductance and permits the interconnection of the diodes into Tees at the wafer level. Three barrier levels are available allowing different levels of local oscillator drive power. The L series features a low barrier for applications which have low available local oscillator power. Both medium barrier (M series) and high barrier (H_ series) devices are available for applications with higher drive levels. The RF and local oscillator fre- quencies can range up to 18 GHz with selection of an appropriate junction capacitance. Each series is available in three case styles which are compatible with microstrip or stripline assembly techniques. The 270 case style is her- metically sealed and is suggested for harsh environments or for military or high reliability circuits. The 272 case style is a low cost plastic enclosure similar in case style. The beam lead case styles 271 and 1012 are designed for max- imum bandwidth. The case style 271 is a forward tee and the 1012 is a reverse tee. The case style 1000 is the small- est stripline package and has the lowest parasitic capaci- tance and inductance. Case Styles (See appendix for complete dimensions.) V3.00 Case Styles |G Q 271 | = 1012 Absolute Maximum Ratings at 25C Parameter Absolute Maximum Operating and Storage Temperature Range -65C to +150C (Case Style 270, 271 and 1012) -65C to +125C (Case Styles 272, 1000) Maximum Power Dissipation (derate linearly to zero allowable dissipation at 150C) 75 mW/junction Soldering Temperature 235C for 10 sec. (Case Style 270) 150C for 5 sec. (Case Styles 271, 272) Beam Strength 2g (Case Style 271, 1012) re <s a 272 1000 Specifications Subject to Change Without Notice. M/A-COM, Inc. 1 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020 Schottky Barrier Packaged and Beam Lead Tees MA4E20, MA4E970 Series V3.00 Electrical Specifications at 25C Schottky Tees Maximum Maximum? Maximum | Junction Nominal Forward Nominal Junction |Capacitance | Maximum* Forward Voltage Noise Minimum* Suggested | Capacitance| Difference | Resistance Voltage Match Figure Reverse Model> Barrier Frequency Cj ACj Rg Ve VE NF Voltage Number Height (Hz) (pF) (pF) (Ohms) (Volts) (Volts) (dB) VR MA4E201L Low Ss 0.50 0.10 7 0.25 0.015 6.0 2 MA4E204L Low C-X 0.35 0.10 10 0.27 0.015 6.5 2 MA4E207L Low Ku 0.20 0.05 12 0.30 0.015 7.5 2 MA4E201M Medium Ss 0.50 0.10 7 0.35 0.015 6.0 3 MA4E204M Medium C-X 0.35 0.10 10 0.37 0.015 6.5 3 MA4E207M Medium Ku 0.20 0.05 12 0.40 0.015 7.5 3 MA4E201H High Ss 0.50 0.10 7 0.55 0.015 6.0 5 MA4E204H High C-X 0.35 0.10 10 0.57 0.015 6.5 5 MA4E207H High Ku 0.20 0.05 12 0.60 0.015 7.5 5 Schottky Reverse Tees Maximum' Maximum? Maximum | Junction Nominal Forward Nominal Junction |Capacitance| Maximum* Forward Voltage Noise Minimum* Capacitance| Difference | Resistance Voltage Match Figure Reverse Model Barrier Frequency C AC, Rg Ve Ve NF Voltage Number Height (Hz) (pF) (pF) (Ohms) (Volts) (Volts) (dB) VR MA4E974L Low Ss 0.50 0.10 7 0.25 0.015 6.0 2 MA4E975L Low C-X 0.35 0.10 10 0.27 0.015 6.5 2 MA4E976L Low Ku 0.20 0.05 12 0.30 0.015 7.5 2 MA4E974M Medium Ss 0.50 0.10 7 0.25 0.015 6.0 3 MA4E975M Medium C-X 0.35 0.10 10 0.27 0.015 6.5 3 MA4E976M Medium Ku 0.20 0.05 12 0.30 0.015 7.5 3 MA4E974H High Ss 0.50 0.10 7 0.25 0.015 6.0 4 MA4E975H High C-X 0.35 0.10 10 0.27 0.015 6.5 4 MA4E976H High Ku 0.20 0.05 12 0.30 0.015 7.5 4 Notes: 1. C; and AC are measured at V, = 0 volts and f = 1.0 MHz. 2. V- is measured at I; = 1.0 mA. 3. Series resistance, Rg, is determined by subtracting the junction resistance, Ri. from the measured value of 10 mA dynamic (slope) resistance, Ry: Rg = R,- R, Ohms Junction resistance is computed from the following equation: R - 26/|- Ohms lp = 10 mA |- is the forward bias current in mA. Specifications Subject to Change Without Notice. 2 4. Reverse voltage is measured at I, = 10 pA. 5. The standard case styles for the forward tee series is 271, and the Schottky beam lead tees are 270, 271, 272 and 1000. 6. The standard case style for the reverse tee series of diodes is case style 1012. Tees are available in case styles 270, 272 and 1000. 7. To order parts specify the package as a suffix, i.e., MA4E201L-270 is a low barrier tee in case style 270. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. M/A-COM, Inc. +44 (1344) 869 595 Fax +44 (1344) 300 020