AP9563H/J Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS -40V RDS(ON) 40m ID G -26A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563J) is available for low-profile applications. S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 25 V ID@TC=25 Continuous Drain Current, VGS @ 10V -26 A ID@TC=100 Continuous Drain Current, VGS @ 10V -16 A 1 IDM Pulsed Drain Current -64 A PD@TC=25 Total Power Dissipation 44.6 W Linear Derating Factor 0.36 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 2.8 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Data and specifications subject to change without notice 200227041 AP9563H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -40 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA - -0.03 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A - - 40 m VGS=-4.5V, ID=-12A - - 60 m VDS=VGS, ID=-250uA -1 - -3 V VDS=-10V, ID=-12A - 18 - S VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 25V - - 100 nA ID=-12A - 19 30 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=-250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC VDS=-20V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-12A - 37 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 52 - ns tf Fall Time RD=1.6 - 80 - ns Ciss Input Capacitance VGS=0V - 1460 2340 pF Coss Output Capacitance VDS=-25V - 230 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Min. Typ. IS=-12A, VGS=0V - - -1.2 V IS=-12A, VGS=0V, - 40 - ns dI/dt=-100A/s - 54 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. Test Conditions Max. Units AP9563H/J 100 90 -10V -7.0V o T A = 25 C -10V -7.0V TA=150oC 80 -ID , Drain Current (A) -ID , Drain Current (A) 80 60 -5.0V -4.5V 40 60 50 -5.0V 40 -4.5V 30 20 V G = -3.0 V 20 70 V G = -3.0 V 10 0 0 0 2 4 6 8 10 12 0 14 -V DS , Drain-to-Source Voltage (V) 4 6 8 10 12 14 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 46 1.8 I D = -12 A T C =25 I D =-16A V G =-10V 1.6 Normalized R DS(ON) 42 RDS(ON) (m ) 2 38 1.4 1.2 1.0 34 0.8 0.6 30 3 5 7 9 -50 11 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 2.5 5 2 T j =150 o C 3 -VGS(th) (V) -IS(A) 4 T j =25 o C 1.5 2 1 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9563H/J -VGS , Gate to Source Voltage (V) 12 f=1.0MHz 10000 V DS =-32V I D =-12A 10 C (pF) 8 6 C iss 1000 4 C oss 2 C rss 100 0 0 10 20 30 1 40 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 1ms o T c =25 C Single Pulse 10ms 100ms DC 1 Normalized Thermal Response (Rthjc) 100 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q