Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Lower On-resistance BVDSS -40V
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▼ Simple Drive Requirement RDS(ON) 40mΩ
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▼ Fast Switching Characteristic ID-26A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice
-55 to 150
Linear Derating Factor
Thermal Data Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
44.6
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V -16
Pulsed Drain Current1-64
200227041
AP9563H/J
Rating
-40
±25
-26
0.36
G
D
S
GDSTO-252(H)
GDSTO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9563J) is available for low-profile applications.
AP9563H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-16A - - 40 mΩ
VGS=-4.5V, ID=-12A - - 60 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-12A - 18 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=-32V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ±25V - - nA
QgTotal Gate Charge2ID=-12A - 19 30 nC
Qgs Gate-Source Charge VDS=-32V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC
td(on) Turn-on Delay Time2VDS=-20V - 10 - ns
trRise Time ID=-12A - 37 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 52 - ns
tfFall Time RD=1.6Ω-80-ns
Ciss Input Capacitance VGS=0V - 1460 2340 pF
Coss Output Capacitance VDS=-25V - 230 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-12A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-12A, VGS=0V, - 40 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 54 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
±100
AP9563H/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
20
40
60
80
100
02468101214
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oC -10V
-7.0V
-5.0V
-4.5V
VG=-3.0V
0
10
20
30
40
50
60
70
80
90
02468101214
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
VG=-3.0V
TA=150oC
30
34
38
42
46
357911
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
ID=-12 A
TC=25
℃
℃℃
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-16A
VG=-10V
0.5
1
1.5
2
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
-VGS(th) (V)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
AP9563H/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
0 10203040
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS =-32V
ID=-12A
100
1000
10000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25 oC
Single Pulse
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse