2N6515, 2N6517, 2N6520 High Voltage Transistors NPN and PNP Features * Voltage and Current are Negative for PNP Transistors * Pb-Free Package is Available* http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N6517 2N6515 2N6520 Unit Collector - Emitter Voltage VCEO 250 350 Vdc Collector - Base Voltage VCBO 250 350 Vdc Emitter - Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO 1 EMITTER 2 BASE PNP Vdc 1 EMITTER 6.0 5.0 Base Current IB 250 mAdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C -55 to +150 C Operating and Storage Junction Temperature Range COLLECTOR 3 NPN TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO-92 CASE 29 STYLE 1 12 3 MARKING DIAGRAM 2N65xx YWW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RJA 200 C/W Thermal Resistance, Junction-to-Case RJC 83.3 C/W Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 May, 2004 - Rev. 4 1 Publication Order Number: 2N6515/D 2N6515, 2N6517, 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 350 - - 250 350 - - 6.0 5.0 - - - - 50 50 - - 50 50 2N6515 2N6517, 2N6520 35 20 - - (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 - - (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 - - - - - - 0.30 0.35 0.50 1.0 - - - 0.75 0.85 0.90 - 2.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 Vdc ICBO nAdc IEBO nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 - Vdc Vdc Vdc 2N6515, 2N6517, 2N6520 SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 40 200 MHz Ccb - 6.0 pF - - 80 100 Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton - 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff - 3.5 s 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Package Shipping 2N6515 TO-92 5000 Unit / Bulk 2N6515RLRM TO-92 2000 Tape & Ammo Box 2N6517 TO-92 5000 Unit / Bulk 2N6517RLRA TO-92 2000 Tape & Reel 2N6517RLRP TO-92 2000 Tape & Ammo Box 2N6520RLRA TO-92 2000 Tape & Reel TO-92 (Pb-Free) 2000 Tape & Reel Device 2N6520RLRAG For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 2N6515, 2N6517, 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125C 100 25C 70 -55 C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain NPN 2N6515 200 200 TJ = 125C VCE = -10 V 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 10 V 25C 70 50 -55 C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 25C 70 -55 C 50 30 20 10 -1.0 50 70 100 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. DC Current Gain PNP 2N6520 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain NPN 2N6517 30 TJ = 125C 50 70 100 Figure 4. Current-Gain - Bandwidth Product NPN 2N6515, 2N6517 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Current-Gain - Bandwidth Product PNP 2N6520 http://onsemi.com 4 2N6515, 2N6517, 2N6520 -1.4 1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 2.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 0 -1.0 70 100 1.5 1.0 0.5 0 25C to 125C RVC for VCE(sat) -55 C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) IC 10 IB 2.0 -55 C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.0 1.5 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 0.5 Ccb -55 C to 25C -1.0 -1.5 RVC for VCE(sat) -55 C to 125C -2.0 -2.5 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 TJ = 25C 20 10 7.0 5.0 2.0 1.0 -0.2 50 100 200 Ceb 30 3.0 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) RVB for VBE -0.5 2.0 0.5 25C to 125C 0 3.0 1.0 0.2 IC 10 IB 1.0 100 70 50 Ceb 10 7.0 5.0 -50 -70 -100 Figure 9. Temperature Coefficients PNP 2N6520 TJ = 25C 30 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) 2.5 Figure 8. Temperature Coefficients NPN 2N6515, 2N6517 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. "On" Voltages PNP 2N6520 Figure 6. "On" Voltages NPN 2N6515, 2N6517 2.5 TJ = 25C Figure 10. Capacitance NPN 2N6515, 2N6517 Ccb -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance PNP 2N6520 http://onsemi.com 5 -10 0 -20 0 2N6515, 2N6517, 2N6520 1.0k 700 500 td @ VBE(off) = 2.0 V VCE(off) = 100 V IC/IB = 5.0 TJ = 25C tr 100 70 50 200 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 10 -1.0 70 100 Figure 12. Turn-On Time NPN 2N6515, 2N6517 10k 7.0k 5.0k t, TIME (ns) tr -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 13. Turn-On Time PNP 2N6520 2.0k ts ts 1.0k 700 3.0k 500 2.0k 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C 100 70 50 20 10 1.0 td @ VBE(off) = 2.0 V 300 200 t, TIME (ns) t, TIME (ns) 300 1.0k 700 500 tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 tf VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 100 70 50 300 200 30 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 Figure 14. Turn-Off Time NPN 2N6515, 2N6517 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 15. Turn-Off Time PNP 2N6520 http://onsemi.com 6 -50 -70 -100 2N6515, 2N6517, 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 16. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 tP 1.0 ms TC = 25C 50 FIGURE A 10 s 100 s PP 100 ms PP 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.5 1.0 t1 2N6515 1/f t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Active Region Safe Operating Area 500 Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 7 2N6515, 2N6517, 2N6520 PACKAGE DIMENSIONS TO-92 CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X-X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N6515/D