Semiconductor Group 1
NPN Silicon AF Transistors BCP 54
... BCP 56
5.91
Type Marking Package1)
Pin Configuration
BCP 54
BCP 54-10
BCP 54-16
BCP 55
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
Q62702-C2117
Q62702-C2119
Q62702-C2120
Q62702-C2148
Q62702-C2122
Q62702-C2123
Q62702-C2149
Q62702-C2125
Q62702-C2106
BCP 54
BCP 54-10
BCP 54-16
BCP 55
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
SOT-223
1 2 3
Ordering Code
(tape and reel) 4
B C E C
1) For detailed information see chapter Package Outlines.
●For AF driver and output stages
●High collector current
●Low collector-emitter saturation voltage
●Complementary types: BCP 51 … BCP 53 (PNP)
Semiconductor Group 2
BCP 54
... BCP 56
Maximum Ratings
Parameter Symbol BCP 54 Unit
Collector-emitter voltage RBE ≤1kΩVCE0
VCER 45
45 V
Collector-base voltage VCB0 45
Emitter-base voltage VEB0
Collector current ICA
Base current IBmA
Total power dissipation, TS=124 ˚C1) Ptot W
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient1) Rth JA ≤ 72 K/W
Peak collector current ICM
Peak base current IBM
BCP 55
60
60
60
1
100
1.5
150
1.5
200
Values BCP 56
80
100
100
5
Junction - soldering point Rth JS ≤ 17
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 3
BCP 54
... BCP 56
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 10 mA, IB = 0 BCP 54
BCP 55
BCP 56
V(BR)CE0 45
60
80
–
–
–
–
–
–
nA
µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage1)
I
C = 100 µA, IB = 0 BCP 54
BCP 55
BCP 56
V(BR)CB0 45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
I
E = 10 µA, IC = 0 V(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 500 mA, IB = 50 mA VCEsat – – 0.5
–DC current gain
I
C = 5 mA, VCE = 2 V
I
C = 150 mA, VCE = 2 V
BCP 54/BCP 55/BCP 56
BCP 54/BCP 55/BCP 56-10
BCP 54/BCP 55/BCP 56-16
I
C = 500 mA, VCE = 2 V
hFE 25
40
63
100
25
–
–
100
160
–
–
250
160
250
–
Base-emitter voltage1)
I
C = 500 mA, VCE = 2 V VBE ––1
µAEmitter-base cutoff current
VEB = 5 V IEB0 ––10
MHzTransition frequency
I
C = 50 mA, VCE = 10 V, f = 100 MHz fT– 100 –
AC characteristics
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 4
BCP 54
... BCP 56
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
DC current gain hFE = f (IC)
VCE = 2 V
Transition frequency fT=f(IC)
VCE = 10 V
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Semiconductor Group 5
BCP 54
... BCP 56
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
Permissible pulse load Ptot max/Ptot DC =f(tp)
