DD(KD)30GB40/80
DIODE MODULE
■Electrical Characteristics
Symbol Item Ratings
DD30GB40 DD30GB80 Unit
VRRM
Repetitive Peak Reverse Voltage
400 800 V
VRSM
Non-Repetitive Peak Reverse Voltage
480 960 V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF(AV)
Single phase, half wave, 180°conduction, Tc:118℃
30
IF(RMS)R.M.S. Forward Current
Single phase, half wave, 180°conduction, Tc:118℃
47 A
IFSM Surge Forward Current 1
/
2 cycle, 50/60HZ, peak value, non-repetitive 550/600 A
I2tI2t Value for one cycle of surge current 1500 A2S
Tj Junction Temperature −40 to +150 ℃
Tstg Storage Temperature −40 to +125 ℃
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
2500 V
N・m
(㎏f・B)
4.7(48)
2.7(28)
Mass 170 g
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at VDRM, single phase, half wave. Tj=150℃
Ratings
10
1.40
Unit
mA
VFM Forward Voltage Drop, max.
Foward current 90A,Tj=25℃,Inst. measurement
V
0.80
Rth(j-c)Thermal Impedance, max. Junction to case ℃/W
93.5MAX
26MAX30MAX 1321
80
16.5 23
3
~+ –
21
23 3M5
2-6.5
Unit:a
Mounting
Torque
Mounting
(M6)
Terminal(M5)
Power Diode Module DD30GB series are designed for various rectifier circuits.
DD30GB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
●Isolated mounting base
●Two elements in a package for simple (single and three phase) bridge
connections
●Highly reliable glass passivated chips
●High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
UL;E76102(M)
■Maximum Ratings (Tj=25℃unless otherwise specified)
3 2 1
1
DD
KD
3
2
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