SMALL SIGNAL SWITCHING DIODES LL4148 Features * Silicon epitaxial planar diode * Fast switching diodes MELF (DO-35) * 500mW power dissipation * This diode is also available in the DO-35 case with SOLDERABLE ENDS the type designation 1N4148 0.020(0.50) 0.011(0.28) Mechanical Data 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.051(1.30) * Case: Mini-MELF glass case(DO-35) * Weight: Approx. 0.05 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) Symbol VR VRM Reverse Voltage Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F50Hz IAV Surge forward current at t<1S and TJ=25 IFSM Ptot Power dissipation at TA=25 Junction temperature TJ TSTG Storage temperature range Value Units 75 Volts 100 Volts 1501) mA 500 mA 5001) mW 175 -65 to +175 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Electrical characteristics (Ratings at 25 ambient temperature unless otherwise specified) Forward voltage Leakage current at VR=20V at VR=75V at VR=20V, TJ=150 Junction Capacitance at VR=VF=0V Symbols VF IR IR IR CJ Min. Typ. Max. Units 1 25 5 50 Volts 4 nA A A pF Voltage rise when switching ON tested with 50mA pulse tp=0.1S, Rise time<30S, fp=5 to 100KHz Vfr 2.5 Volts Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 trr 4 ns 3501) K/W Thermal resistance, junction to Ambient Rectification efficiency at f=100MHz, VRF=2V RJA 0.45 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) RATINGS AND CHARACTERISTIC CURVES LL4148 FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.1-FORWARD CHARACTERISTICS mA 104 103 TJ= 25 f=1KHz 102 103 IF TJ=25 TJ=100 rf 10 102 1 10 10-1 10-2 1 0 1 2V 10-2 10-1 1 VF 102 10 mA IF FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 1.1 900 TJ= 25 f=1MHz 800 Ctot(VR) 1.0 Ctot(OV) 700 Ptot 600 0.9 500 400 0.8 300 200 0.7 100 0 0 200 100 TA 0 2 4 6 8 VR 10V RATINGS AND CHARACTERISTIC CURVES LL4148 FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 104 103 D.U.T. 60 2nF VRF=2V 5K VO 102 10 VR= 20V 1 0 200 100 FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10-5 10-4 10-3 10-2 10-1 tp 1 10S