NPN-Silizium-Fototransistor im SMT SIDELED(R)-Gehause Silicon NPN Phototransistor in SMT SIDELED(R)-Package Lead (Pb) Free Product - RoHS Compliant SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1120 nm (SFH 325) und bei 750 nm bis 1120 nm (SFH 325 FA) * Hohe Linearitat * P-LCC-2 Gehause * Gruppiert lieferbar * Especially suitable for applications from 450 nm to 1120 nm (SFH 325) and from 750 nm to 1120 nm (SFH 325 FA) * High linearity * P-LCC-2 package * Available in groups Anwendungen Applications * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Miniature photointerrupters * Industrial electronics * For control and drive circuits Typ Type SFH 3251) SFH 325-31) 1) SFH 325-3/-4 SFH 325-4 1) SFH 325 FA1) SFH 325 FA-31) SFH 325 FA-3/-4 SFH 325 FA-41) 1) 1) Bestellnummer Ordering Code Fotostrom , (Ee=0,1mW/cm2,=950nm VCE = 5 V) Photocurrent Ipce (A) Q65110A2486 > 16 Q65110A2488 25-50 Q65110A2491 25-80 Q65110A2484 40-80 Q65110A2487 > 16 Q65110A2482 25-50 Q65110A2490 25-80 Q65110A2485 40-80 Gruppierung erfolgt in Halbgruppen (siehe Seite 4), Verpackungseinheit = nur eine Halbgruppe / binning in half groups (see page 4), packing unit = only one half group 2007-04-04 1 SFH 325, SFH 325 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 75 mA Verlustleistung, TA = 25 C Total power dissipation Ptot 165 mW Warmewiderstand fur Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 450 K/W 2007-04-04 2 SFH 325, SFH 325 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value SFH 325 SFH 325 FA 980 Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 980 Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 450 ... 1120 750 ... 1120 nm Bestrahlungsempfindliche Flache ( 220 m) Radiant sensitive area A 0.038 0.038 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 0.45 x 0.45 0.45 x 0.45 mm x mm Halbwinkel Half angle 60 60 Grad deg. Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 5.0 5.0 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 1 ( 50) 1 ( 50) nA 2007-04-04 3 nm SFH 325, SFH 325 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V SFH 325: Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Wert Value -2A -2B -3A -3B -4A -4B IPCE min IPCE max 16 25 20 32 25 40 32 50 40 63 50 80 IPCE 360 450 570 720 900 tr, tf 6 6 7 7 8 8 s 150 150 150 150 150 150 mV Kollektor-Emitter-Sattigungsspannung VCEsat Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-04-04 0.8 0.6 0.4 0 20 Einheit Unit 40 60 80 100 4 120 A A 1140 A SFH 325, SFH 325 FA Relative Spectral Sensitivity, SFH 325 Srel = f () Srel OHF00207 100 % Relative Spectral Sensitivity, SFH 325 FA Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V PCE S rel % 80 80 OHF01924 10 3 A OHF00468 100 10 2 70 60 4 3 2 60 10 1 50 40 40 30 10 0 20 20 10 0 400 500 600 700 800 900 nm 1100 Photocurrent IPCE = f (VCE), Ee = Parameter OHF00871 10 -1 -3 10 mW/cm 2 10 -2 160 120 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 0.1 mW cm 2 10 0 Ee Dark Current ICEO = f (VCE), E = 0 OHF01529 10 0 mA PCE mW P tot nm 1100 Total Power Dissipation Ptot = f (TA) 200 0 400 500 600 700 800 900 OHF01527 10 1 nA CEO 10 0 10 -1 10 -1 80 10 -2 40 0 10 -2 0 20 40 60 80 C 100 TA Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA CEO 0 5 10 15 20 25 Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF01528 5.0 10 -3 30 V 35 V CE 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V PCE OHF01524 1.6 PCE 25 C CE pF 1.4 4.0 10 2 1.2 3.5 1.0 3.0 10 1 2.5 0.8 2.0 0.6 1.5 10 0 0.4 1.0 0.2 0.5 10 -1 -25 2007-04-04 0 25 50 75 C 100 TA 0 10 -2 10 -1 10 0 5 10 1 V 10 2 V CE 0 -25 0 25 50 75 C 100 TA SFH 325, SFH 325 FA Mazeichnung Package Outlines 1.1 (0.043) Emitter (1.4 (0.055)) (R1) 4.2 (0.165) 3.8 (0.150) GPLY6068 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-04 3.8 (0.150) 3.4 (0.134) (2.9 (0.114)) Collector marking (2.85 (0.112)) 0.9 (0.035) (0.3 (0.012)) Collector 2.54 (0.100) spacing 0.7 (0.028) 4.2 (0.165) 3.8 (0.150) 2.4 (0.094) 2.8 (0.110) (2.4 (0.094)) 6 SFH 325, SFH 325 FA Empfohlenes Lotpaddesign Recommended Solderpad Design 3.0 (0.118) 3.7 (0.146) 1.2 (0.047) Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 Lotstopplack Solder resist OHLPY965 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-04 7 SFH 325, SFH 325 FA Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2007-04-04 8 s 250 SFH 325, SFH 325 FA Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-04 9