SCT10N120H Datasheet Silicon carbide Power MOSFET 1200 V, 13 A, 500 m (typ., TJ=25 C), in an HPAK-2 package Features TAB 2 3 1 * * Very tight variation of on-resistance vs temperature Very high operating temperature capability (TJ = 175 C) * * Very fast and robust intrinsic body diode Low capacitance Application H2PAK-2 * * D(TAB) High voltage DC-DC converters Switch mode power supplies Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. G(1) S(2,3) NCHG1DTABS23 Product status link SCT10N120H Product summary Order code SCT10N120H Marking SCT10N120 Package H2PAK-2 Packing Tape and reel DS13479 - Rev 1 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCT10N120H Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 C 13 A ID Drain current (continuous) at TC = 100 C 10 A IDM (1) Drain current (pulsed) 30 A PTOT Total power dissipation at TC = 25 C 130 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 175 C C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.17 C/W Rthj-pcb (1) Thermal resistance junction-pcb 40 C/W 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS13479 - Rev 1 page 2/15 SCT10N120H Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS IDSS IGSS VGS(th) Parameter Test conditions Drain-source breakdown voltage Zero gate voltage VGS = 0 V, ID = 1 mA Min. Gate-body leakage VDS = 0 V, VGS = -10 to 22 V current Gate threshold voltage VDS = VGS, ID = 250 A 1.8 TJ = 150 C on-resistance VGS = 20 V, ID = 6 A, TJ = 175 C 10 A 100 nA 3.5 500 VGS = 20 V, ID = 6 A, Static drain-source Unit V VDS = 1200 V, VGS = 0 V drain current Max. 1200 VGS = 20 V, ID = 6 A RDS(on) Typ. V 690 m 520 m 540 m Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 6 A, VGS = 0 to 20 V f = 1 MHz, ID = 0 A Min. Typ. Max. Unit - 290 - pF - 30 - pF - 9 - pF - 22 - nC - 3 - nC - 10 - nC - 8 - Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol DS13479 - Rev 1 Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 90 - J Eoff Turn-off switching energy RG = 10 , VGS = -5 to 20 V - 30 - J Eon Turn-on switching energy VDD = 800 V, ID = 6 A - 104 - J Eoff Turn-off switching energy - 33 - J RG = 10 , VGS = -5 to 20 V TJ = 150 C page 3/15 SCT10N120H Electrical characteristics Table 6. Switching times Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. Unit - 7 - ns Fall time VDD = 800 V, ID = 6 A, - 17 - ns Turn-off delay time RG = 10 , VGS = -5 to 20 V - 14 - ns - 12 - ns Min Typ. Max Unit - 2.5 - V - 16 - ns - 107 - nC - 12 - A Rise time Table 7. Reverse SiC diode characteristics Symbol DS13479 - Rev 1 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 6 A, VGS = 0 V ISD = 6 A, di/dt = 2000 A/s VDD = 800 V, TJ= 150 C page 4/15 SCT10N120H Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Normalized thermal impedance K GIPG230520161115ZTH Figure 2. Output characteristics (TJ= 25 C) ID (A) 10 0.8 GIPG230520161115OCH_25 V GS = 20 V V GS =16 V 8 0.6 V GS =14 V 6 0.4 4 0.2 0.0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 0 0 Figure 3. Output characteristics (TJ= 150 C) ID (A) 10 GIPG230520161116OCH_150 V GS =16, 20 V V GS =14 V 8 V GS =10 V 2 4 8 ID (A) 6 8 V GS =6 V 10 12 V DS (V) Figure 5. Total power dissipation PTot (W) V DS = 12 V 10 T J = 150 C T J = 25 C 0 0 4 8 12 16 V GS (V) Figure 6. Gate charge vs gate-source voltage GADG240920201641MT 120 V GS (V) GIPG230520161121QVG 20 100 V DD = 800 V ID=6A 16 80 V DS (V) GIPG230520161117TCH 2 2 4 12 4 V GS =10 V 2 10 Figure 4. Transfer characteristics 6 4 6 8 V GS =12 V 6 0 0 V GS =12 V 2 TJ =175C 12 60 8 40 4 20 0 0 DS13479 - Rev 1 50 100 150 TC (C) 0 0 4 8 12 16 20 Q g (nC) page 5/15 SCT10N120H Electrical characteristics curves Figure 7. Capacitance variations C (pF) Figure 8. Switching energy vs. drain current E (J) GIPG230520161122CVR C ISS GIPG230520161127SWEC V DD = 800 V R G = 10 V GS = -5 to 20 V 320 E tot 10 2 E on 240 C OSS 160 10 1 C RSS f = 1 MHz E off 80 10 0 10 -1 10 0 10 1 10 2 V DS (V) Figure 9. Switching energy vs. junction temperature E (J) GIPG230520161131SWET E tot 0 0 4 E on 80 40 0 0 50 V(BR)DSS (norm.) 1.00 E off 0.96 GIPG230520161133BDV 150 T J (C) GIPG230520161149VTH -25 25 75 125 175 Tj (C) Figure 12. Normalized on-resistance vs. temperature R DS(on) (norm.) GIPG230520161134RON V GS = 20 V I D = 250 A 1.1 1.2 1.0 1.0 0.9 0.8 0.8 0.6 DS13479 - Rev 1 0.94 -75 1.2 1.4 0.4 -75 ID = 1 mA 0.98 Figure 11. Normalized gate threshold voltage vs. temperature V GS(th) (norm.) I D (A) 1.02 V DD = 800 V ID=6A R G = 10 V GS = -5 to 20 V 100 12 Figure 10. Normalized V(BR)DSS vs. temperature 1.04 120 8 -25 25 75 125 175 T j (C) 0.7 25 75 125 175 T j (C) page 6/15 SCT10N120H Electrical characteristics curves Figure 13. Body diode characteristics (TJ= -50 C) -8 -6 -4 -2 V DS (V) I D (A) Figure 14. Body diode characteristics (TJ= 25 C) -8 -6 -2 V GS = -5 V V GS = -2 V -6 -4 -2 -2 -4 -6 -6 -8 V GS = -2 V V DS (V) I D (A) -10 V GS = 0 V -12 Figure 15. Body diode characteristics (TJ= 150 C) -8 V DS (V) I D (A) V GS = -5 V -10 GIPG230520161143BDC_-50 -2 -4 -8 V GS = 0 V -4 GIPG230520161146BCD_25 Figure 16. 3rd quadrant characteristics (TJ= -50 C) -4 -3 -2 -1 V DS (V) I D(A) -2 V GS = -5 V -4 -12 -2 VGS = 15 V -4 VGS =10 V -6 -6 V GS = -2 V -8 -10 -12 Figure 17. 3rd quadrant characteristics (TJ= 25 C) -4 -3 -2 -1 VDS (V) ID (A) VGS =10 V VGS =5 V GIPG230520161223QC_25 DS13479 - Rev 1 -12 Figure 18. 3rd quadrant characteristics (TJ= 150 C) -4 -3 -2 -1 V DS (V) I D(A) -2 -4 -4 -8 VGS =0 V GIPG230520161155QC_-50 -2 -6 VGS = 15 V -10 VGS =5 V V GS = 0 V GIPG230520161151BDC_150 -8 V GS =0 V -10 -12 VGS = 15 V -6 VGS =10 V -8 V GS =0 V VGS =5 V GIPG230520161225QC_150 -10 -12 page 7/15 SCT10N120H Test circuits 3 Test circuits Figure 19. Switching test waveforms for transition times Figure 20. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS13479 - Rev 1 V DS Off 10% 90% 10% GIPD101020141502FSR page 8/15 SCT10N120H Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 HPAK-2 package information Figure 21. HPAK-2 package outline 8159712_9 DS13479 - Rev 1 page 9/15 SCT10N120H HPAK-2 package information Table 8. HPAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 D 8.95 9.35 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 F2 1.14 1.70 H 10.00 10.40 H1 7.40 J1 2.49 2.69 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.50 1.70 M 2.60 2.90 R 0.20 0.60 V 0 8 - 7.80 Figure 22. HPAK-2 recommended footprint 8159712_9 Note: DS13479 - Rev 1 Dimensions are in mm. page 10/15 SCT10N120H Packing information 4.2 Packing information Figure 23. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DS13479 - Rev 1 page 11/15 SCT10N120H Packing information Figure 24. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start Table 9. Tape and reel mechanical data Tape Dim. DS13479 - Rev 1 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 12/15 SCT10N120H Revision history Table 10. Document revision history DS13479 - Rev 1 Date Revision 05-Oct-2020 1 Changes First release page 13/15 SCT10N120H Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 HPAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13479 - Rev 1 page 14/15 SCT10N120H IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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