1
2
TAB
3
H2PAK-2
D(TAB)
G(1)
S(2,3)
NCHG1DTABS23
Features
Very tight variation of on-resistance vs temperature
Very high operating temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Low capacitance
Application
High voltage DC-DC converters
Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an
industry-standard outline with significantly improved thermal capability. These
features render the device perfectly suitable for high-efficiency and high power
density applications.
Product status link
SCT10N120H
Product summary
Order code SCT10N120H
Marking SCT10N120
Package H2PAK-2
Packing Tape and reel
Silicon carbide Power MOSFET 1200 V, 13 A, 500 mΩ
(typ., TJ=25 °C), in an H²PAK-2 package
SCT10N120H
Datasheet
DS13479 - Rev 1 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 1200 V
VGS Gate-source voltage -10 to 25 V
IDDrain current (continuous) at TC = 25 °C 13 A
IDDrain current (continuous) at TC = 100 °C 10 A
IDM (1) Drain current (pulsed) 30 A
PTOT Total power dissipation at TC = 25 °C 130 W
Tstg Storage temperature range
-55 to 175
°C
TjOperating junction temperature range °C
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 1.17 °C/W
Rthj-pcb (1) Thermal resistance junction-pcb 40 °C/W
1. When mounted on 1 inch² FR-4 board, 2 oz Cu.
SCT10N120H
Electrical ratings
DS13479 - Rev 1 page 2/15
2Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 1200 V
IDSS
Zero gate voltage
drain current
VDS = 1200 V, VGS = 0 V 10 µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = -10 to 22 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 3.5 V
RDS(on)
Static drain-source
on-resistance
VGS = 20 V, ID = 6 A 500 690
VGS = 20 V, ID = 6 A,
TJ = 150 °C 520
VGS = 20 V, ID = 6 A,
TJ = 175 °C 540
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
- 290 - pF
Coss Output capacitance - 30 - pF
Crss Reverse transfer capacitance - 9 - pF
QgTotal gate charge
VDD = 800 V, ID = 6 A,
VGS = 0 to 20 V
- 22 - nC
Qgs Gate-source charge - 3 - nC
Qgd Gate-drain charge - 10 - nC
RgGate input resistance f = 1 MHz, ID = 0 A - 8 - Ω
Table 5. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon Turn-on switching energy VDD = 800 V, ID = 6 A
RG = 10 Ω, VGS = -5 to 20 V
- 90 - µJ
Eoff Turn-off switching energy - 30 - µJ
Eon Turn-on switching energy VDD = 800 V, ID = 6 A
RG = 10 Ω, VGS = -5 to 20 V
TJ = 150 °C
- 104 - µJ
Eoff Turn-off switching energy - 33 - µJ
SCT10N120H
Electrical characteristics
DS13479 - Rev 1 page 3/15
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 800 V, ID = 6 A,
RG = 10 Ω, VGS = -5 to 20 V
- 7 - ns
tfFall time - 17 - ns
td(off) Turn-off delay time - 14 - ns
trRise time - 12 - ns
Table 7. Reverse SiC diode characteristics
Symbol Parameter Test conditions Min Typ. Max Unit
VSD Diode forward voltage IF = 6 A, VGS = 0 V - 2.5 - V
trr Reverse recovery time
ISD = 6 A, di/dt = 2000 A/µs
VDD = 800 V, TJ= 150 °C
- 16 - ns
Qrr Reverse recovery charge - 107 - nC
IRRM Reverse recovery current - 12 - A
SCT10N120H
Electrical characteristics
DS13479 - Rev 1 page 4/15
2.1 Electrical characteristics curves
Figure 1. Normalized thermal impedance
GIPG230520161115ZTH
0.8
0.6
0.4
0.2
0.0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
K
t p (s)
Figure 2. Output characteristics (TJ= 25 °C)
GIPG230520161115OCH_25
10
8
6
4
2
00 2 4 6 8 10 12
I D
(A)
V DS (V)
V GS =10 V
V GS =12 V
V GS = 20 V
V GS =14 V
V GS =16 V
Figure 3. Output characteristics (TJ= 150 °C)
GIPG230520161116OCH_150
10
8
6
4
2
00 2 4 6 8 10 12
I D
(A)
V DS (V)
V GS =6 V
V GS =10 V
V GS =12 V
V GS =14 V
V GS =16, 20 V
Figure 4. Transfer characteristics
GIPG230520161117TCH
10
8
6
4
2
00 4 8 12 16
I D
(A)
V GS (V)
V DS = 12 V
T J = 150 °C
T J = 25 °C
Figure 5. Total power dissipation
GADG240920201641MT
120
100
80
60
40
20
00 50 100 150
PTot (W)
TC (°C)
TJ =175°C
Figure 6. Gate charge vs gate-source voltage
GIPG230520161121QVG
20
16
12
8
4
00 4 8 12 16 20
V GS
(V)
Q g (nC)
V DD = 800 V
I D = 6 A
SCT10N120H
Electrical characteristics curves
DS13479 - Rev 1 page 5/15
Figure 7. Capacitance variations
GIPG230520161122CVR
10 2
10 1
10 0
10 -1 10 010 110 2
C
(pF)
V DS (V)
C ISS
C OSS
C RSS
f = 1 MHz
Figure 8. Switching energy vs. drain current
GIPG230520161127SWEC
320
240
160
80
00 4 8 12
E
(µJ)
I D (A)
E tot
E on
E off
V DD = 800 V
R G = 10 Ω
V GS = -5 to 20 V
Figure 9. Switching energy vs. junction temperature
GIPG230520161131SWET
120
80
40
00 50 100 150
E
(µJ)
T J (°C)
E tot
E on
E off
V DD = 800 V
R G = 10 Ω
V GS = -5 to 20 V
I D = 6 A
Figure 10. Normalized V(BR)DSS vs. temperature
GIPG230520161133BDV
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 175
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 11. Normalized gate threshold voltage vs.
temperature
GIPG230520161149VTH
1.4
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175
V GS(th)
(norm.)
T j (°C)
I D = 250 µA
Figure 12. Normalized on-resistance vs. temperature
GIPG230520161134RON
1.2
1.1
1.0
0.9
0.8
0.7
25 75 125 175
R DS(on)
(norm.)
T j (°C)
V GS = 20 V
SCT10N120H
Electrical characteristics curves
DS13479 - Rev 1 page 6/15
Figure 13. Body diode characteristics (TJ= -50 °C)
GIPG230520161143BDC_-50
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
I D (A)
V GS = -5 V
V GS = -2 V
V GS = 0 V
V DS (V)
Figure 14. Body diode characteristics (TJ= 25 °C)
GIPG230520161146BCD_25
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
V GS = -5 V
I D (A)
V GS = -2 V
V GS = 0 V
V DS (V)
Figure 15. Body diode characteristics (TJ= 150 °C)
GIPG230520161151BDC_150
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
V GS = -5 V
I D (A)
V GS = -2 V
V GS = 0 V
V DS (V)
Figure 16. 3rd quadrant characteristics (TJ= -50 °C)
GIPG230520161155QC_-50
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
V DS (V)
I D(A)
VGS =10 V
V GS =0 V
VGS =5 V
Figure 17. 3rd quadrant characteristics (TJ= 25 °C)
GIPG230520161223QC_25
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
VDS (V)
ID(A)
VGS =10 V
VGS =0 V
VGS =5 V
Figure 18. 3rd quadrant characteristics (TJ= 150 °C)
GIPG230520161225QC_150
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
V DS (V)
I D
(A)
VGS =10 V
V GS =0 V
VGS =5 V
SCT10N120H
Electrical characteristics curves
DS13479 - Rev 1 page 7/15
3Test circuits
Figure 19. Switching test waveforms for transition times
GIPD101020141511FSR
Figure 20. Clamped inductive switching waveform
VDS
VDS On
td (Off) tr
tOff
90%
90%
tOn
td (On) tf
VGS
VGS Off
V
GS On
VDS Off
10%
10%
90%
10%
GIPD101020141502FSR
SCT10N120H
Test circuits
DS13479 - Rev 1 page 8/15
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 H²PAK-2 package information
Figure 21. H²PAK-2 package outline
8159712_9
SCT10N120H
Package information
DS13479 - Rev 1 page 9/15
Table 8. H²PAK-2 package mechanical data
Dim.
mm
Min. Typ. Max.
A4.30
-
4.70
A1 0.03 0.20
C 1.17 1.37
D 8.95 9.35
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
F2 1.14 1.70
H 10.00 10.40
H1 7.40 7.80
J1 2.49 2.69
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.50 1.70
M 2.60 2.90
R 0.20 0.60
V
Figure 22. H²PAK-2 recommended footprint
8159712_9
Note: Dimensions are in mm.
SCT10N120H
H²PAK-2 package information
DS13479 - Rev 1 page 10/15
4.2 Packing information
Figure 23. Tape outline
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
SCT10N120H
Packing information
DS13479 - Rev 1 page 11/15
Figure 24. Reel outline
A
D
B
Full radius
Tape slot
In core for
Tape start
G measured
At hub
C
N
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
T
Table 9. Tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
SCT10N120H
Packing information
DS13479 - Rev 1 page 12/15
Revision history
Table 10. Document revision history
Date Revision Changes
05-Oct-2020 1 First release
SCT10N120H
DS13479 - Rev 1 page 13/15
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics curves ..................................................5
3Test circuits .......................................................................8
4Package information...............................................................9
4.1 H²PAK-2 package information ....................................................9
4.2 Packing information ...........................................................11
Revision history .......................................................................13
SCT10N120H
Contents
DS13479 - Rev 1 page 14/15
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© 2020 STMicroelectronics – All rights reserved
SCT10N120H
DS13479 - Rev 1 page 15/15