SCT10N120H - STMICROELECTRONICS - Datasheet.Directory

TAB

H2PAK-2

D(TAB)

G(1)

S(2,3)

NCHG1DTABS23

Features

• Very tight variation of on-resistance vs temperature

• Very high operating temperature capability (TJ = 175 °C)

• Very fast and robust intrinsic body diode

• Low capacitance

Application

• High voltage DC-DC converters

• Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an

industry-standard outline with significantly improved thermal capability. These

features render the device perfectly suitable for high-efficiency and high power

density applications.

Product status link

SCT10N120H

Product summary

Order code SCT10N120H

Marking SCT10N120

Package H2PAK-2

Packing Tape and reel

Silicon carbide Power MOSFET 1200 V, 13 A, 500 mΩ

(typ., TJ=25 °C), in an H²PAK-2 package

SCT10N120H

Datasheet

DS13479 - Rev 1 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 1200 V

VGS Gate-source voltage -10 to 25 V

IDDrain current (continuous) at TC = 25 °C 13 A

IDDrain current (continuous) at TC = 100 °C 10 A

IDM (1) Drain current (pulsed) 30 A

PTOT Total power dissipation at TC = 25 °C 130 W

Tstg Storage temperature range

-55 to 175

°C

TjOperating junction temperature range °C

1. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.17 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 40 °C/W

1. When mounted on 1 inch² FR-4 board, 2 oz Cu.

SCT10N120H

Electrical ratings

DS13479 - Rev 1 page 2/15

2Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown

voltage VGS = 0 V, ID = 1 mA 1200 V

IDSS

Zero gate voltage

drain current

VDS = 1200 V, VGS = 0 V 10 µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = -10 to 22 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 3.5 V

RDS(on)

Static drain-source

on-resistance

VGS = 20 V, ID = 6 A 500 690 mΩ

VGS = 20 V, ID = 6 A,

TJ = 150 °C 520 mΩ

VGS = 20 V, ID = 6 A,

TJ = 175 °C 540 mΩ

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 400 V, f = 1 MHz,

VGS = 0 V

- 290 - pF

Coss Output capacitance - 30 - pF

Crss Reverse transfer capacitance - 9 - pF

QgTotal gate charge

VDD = 800 V, ID = 6 A,

VGS = 0 to 20 V

- 22 - nC

Qgs Gate-source charge - 3 - nC

Qgd Gate-drain charge - 10 - nC

RgGate input resistance f = 1 MHz, ID = 0 A - 8 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

- 90 - µJ

Eoff Turn-off switching energy - 30 - µJ

Eon Turn-on switching energy VDD = 800 V, ID = 6 A

RG = 10 Ω, VGS = -5 to 20 V

TJ = 150 °C

- 104 - µJ

Eoff Turn-off switching energy - 33 - µJ

SCT10N120H

Electrical characteristics

DS13479 - Rev 1 page 3/15

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 800 V, ID = 6 A,

RG = 10 Ω, VGS = -5 to 20 V

- 7 - ns

tfFall time - 17 - ns

td(off) Turn-off delay time - 14 - ns

trRise time - 12 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min Typ. Max Unit

VSD Diode forward voltage IF = 6 A, VGS = 0 V - 2.5 - V

trr Reverse recovery time

ISD = 6 A, di/dt = 2000 A/µs

VDD = 800 V, TJ= 150 °C

- 16 - ns

Qrr Reverse recovery charge - 107 - nC

IRRM Reverse recovery current - 12 - A

SCT10N120H

Electrical characteristics

DS13479 - Rev 1 page 4/15

2.1 Electrical characteristics curves

Figure 1. Normalized thermal impedance

GIPG230520161115ZTH

0.8

0.6

0.4

0.2

0.0

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1

t p (s)

Figure 2. Output characteristics (TJ= 25 °C)

GIPG230520161115OCH_25

00 2 4 6 8 10 12

I D

(A)

V DS (V)

V GS =10 V

V GS =12 V

V GS = 20 V

V GS =14 V

V GS =16 V

Figure 3. Output characteristics (TJ= 150 °C)

GIPG230520161116OCH_150

00 2 4 6 8 10 12

I D

(A)

V DS (V)

V GS =6 V

V GS =10 V

V GS =12 V

V GS =14 V

V GS =16, 20 V

Figure 4. Transfer characteristics

GIPG230520161117TCH

00 4 8 12 16

I D

(A)

V GS (V)

V DS = 12 V

T J = 150 °C

T J = 25 °C

Figure 5. Total power dissipation

GADG240920201641MT

120

100

00 50 100 150

PTot (W)

TC (°C)

TJ =175°C

Figure 6. Gate charge vs gate-source voltage

GIPG230520161121QVG

00 4 8 12 16 20

V GS

(V)

Q g (nC)

V DD = 800 V

I D = 6 A

SCT10N120H

Electrical characteristics curves

DS13479 - Rev 1 page 5/15

Figure 7. Capacitance variations

GIPG230520161122CVR

10 2

10 1

10 0

10 -1 10 010 110 2

(pF)

V DS (V)

C ISS

C OSS

C RSS

f = 1 MHz

Figure 8. Switching energy vs. drain current

GIPG230520161127SWEC

320

240

160

00 4 8 12

(µJ)

I D (A)

E tot

E on

E off

V DD = 800 V

R G = 10 Ω

V GS = -5 to 20 V

Figure 9. Switching energy vs. junction temperature

GIPG230520161131SWET

120

00 50 100 150

(µJ)

T J (°C)

E tot

E on

E off

V DD = 800 V

R G = 10 Ω

V GS = -5 to 20 V

I D = 6 A

Figure 10. Normalized V(BR)DSS vs. temperature

GIPG230520161133BDV

1.04

1.02

1.00

0.98

0.96

0.94

-75 -25 25 75 125 175

V(BR)DSS

(norm.)

Tj (°C)

ID = 1 mA

Figure 11. Normalized gate threshold voltage vs.

temperature

GIPG230520161149VTH

1.4

1.2

1.0

0.8

0.6

0.4

-75 -25 25 75 125 175

V GS(th)

(norm.)

T j (°C)

I D = 250 µA

Figure 12. Normalized on-resistance vs. temperature

GIPG230520161134RON

1.2

1.1

1.0

0.9

0.8

0.7

25 75 125 175

R DS(on)

(norm.)

T j (°C)

V GS = 20 V

SCT10N120H

Electrical characteristics curves

DS13479 - Rev 1 page 6/15

Figure 13. Body diode characteristics (TJ= -50 °C)

GIPG230520161143BDC_-50

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

I D (A)

V GS = -5 V

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 14. Body diode characteristics (TJ= 25 °C)

GIPG230520161146BCD_25

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 15. Body diode characteristics (TJ= 150 °C)

GIPG230520161151BDC_150

-2

-4

-6

-8

-10

-12

-8 -6 -4 -2

V GS = -5 V

I D (A)

V GS = -2 V

V GS = 0 V

V DS (V)

Figure 16. 3rd quadrant characteristics (TJ= -50 °C)

GIPG230520161155QC_-50

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)

I D(A)

VGS =10 V

V GS =0 V

VGS =5 V

Figure 17. 3rd quadrant characteristics (TJ= 25 °C)

GIPG230520161223QC_25

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

VDS (V)

ID(A)

VGS =10 V

VGS =0 V

VGS =5 V

Figure 18. 3rd quadrant characteristics (TJ= 150 °C)

GIPG230520161225QC_150

-2

-4

-6

-8

-10

-12

-4 -3 -2 -1

VGS = 15 V

V DS (V)

I D

(A)

VGS =10 V

V GS =0 V

VGS =5 V

SCT10N120H

Electrical characteristics curves

DS13479 - Rev 1 page 7/15

3Test circuits

Figure 19. Switching test waveforms for transition times

GIPD101020141511FSR

Figure 20. Clamped inductive switching waveform

VDS

VDS On

td (Off) tr

tOff

90%

tOn

td (On) tf

VGS

VGS Off

GS On

VDS Off

10%

90%

10%

GIPD101020141502FSR

SCT10N120H

Test circuits

DS13479 - Rev 1 page 8/15

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,

depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product

status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 H²PAK-2 package information

Figure 21. H²PAK-2 package outline

8159712_9

SCT10N120H

Package information

DS13479 - Rev 1 page 9/15

Table 8. H²PAK-2 package mechanical data

Dim.

Min. Typ. Max.

A4.30

4.70

A1 0.03 0.20

C 1.17 1.37

D 8.95 9.35

e 4.98 5.18

E 0.50 0.90

F 0.78 0.85

F2 1.14 1.70

H 10.00 10.40

H1 7.40 7.80

J1 2.49 2.69

L 15.30 15.80

L1 1.27 1.40

L2 4.93 5.23

L3 6.85 7.25

L4 1.50 1.70

M 2.60 2.90

R 0.20 0.60

V 0° 8°

Figure 22. H²PAK-2 recommended footprint

8159712_9

Note: Dimensions are in mm.

SCT10N120H

H²PAK-2 package information

DS13479 - Rev 1 page 10/15

4.2 Packing information

Figure 23. Tape outline

A0 D1

User direction of feed

10 pitches cumulative

tolerance on tape +/- 0.2 mm

User direction of feed

Bending radius

Top cover

tape

AM08852v2

SCT10N120H

Packing information

DS13479 - Rev 1 page 11/15

Figure 24. Reel outline

Full radius

Tape slot

In core for

Tape start

G measured

At hub

REEL DIMENSIONS

40 mm min.

Access hole

At slot location

Table 9. Tape and reel mechanical data

Tape Reel

Dim.

Min. Max. Min. Max.

A0 10.5 10.7 A330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

SCT10N120H

Packing information

DS13479 - Rev 1 page 12/15

Revision history

Table 10. Document revision history

Date Revision Changes

05-Oct-2020 1 First release

SCT10N120H

DS13479 - Rev 1 page 13/15

Contents

1Electrical ratings ..................................................................2

2Electrical characteristics...........................................................3

2.1 Electrical characteristics curves ..................................................5

3Test circuits .......................................................................8

4Package information...............................................................9

4.1 H²PAK-2 package information ....................................................9

4.2 Packing information ...........................................................11

Revision history .......................................................................13

SCT10N120H

Contents

DS13479 - Rev 1 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST

products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST

products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of

Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service

names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

SCT10N120H

DS13479 - Rev 1 page 15/15