300mA RF ULDO REGULATOR AP2210
Data Sheet
1
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
General Description
The AP2210 is a 300mA ULDO regulator which pro-
vides very low noise, ultra low dropout voltage
(typically 250mV at 300mA), very low standby current
(1µA maximum) and excellent power supply ripple
rejection (PSRR 75dB at 100Hz) in battery powered
applications, such as handsets, PDAs and in noise sen-
sitive applications, such as RF electronics.
The AP2210 also features individual logic compatible
enable/shutdown control inputs, a low power shutdown
mode for extended battery life, over current protection,
over temperature protection, as well as reversed-bat-
tery protection.
The AP2210 has 2.5V, 2.8V, 3.0V, 3.3V, 3.6V, 4.0V,
5.0V and ADJ versions.
The AP2210 is available in space saving SOT-23-3 and
SOT-23-5 packages.
Features
·Up to 300mA Output Current
·Excellent ESR Stability
·Low Standby Current
·Low Dropout Voltage: VDROP=250mV at 300mA
·High Output Accuracy: ±1%
·Good Ripple Rejection Ability: 75dB at 100Hz
and IOUT=100µA
·Tight Load and Line Regulation
·Low Temperature Coefficient
·Over Current Protection
·Thermal Protection
·Reverse-battery Protection
·Logic-controlled Enable
Applications
·Cellular Phones
·Cordless Phones
·Wireless Communicators
·PDAs/Palmtops
·PC Mother Board
·Consumer Electronics
SOT-23-5
Figure 1. Package Types of AP2210
SOT-23-3
300mA RF ULDO REGULATOR AP2210
Data Sheet
2
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Figure 2. Pin Configuration of AP2210 (Top View)
(SOT-23-5)
Pin Description
Pin Number
Pin Name Function
SOT-23-3 SOT-23-5
1 2 GND Ground
2 5 VOUT Regulated output voltage
3 1 VIN Input voltage
3 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic
low=shutdown
4 BYP/ADJ Bypass capacitor for low noise operation/Adjustable Output
K Package
Pin Configuration
BYP/ADJ
GND
EN
VOUT
VIN
(SOT-23-3)
GND VOUT
VIN
N Package
3
21
1
2
34
5
300mA RF ULDO REGULATOR AP2210
Data Sheet
3
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Figure 3. Functional Block Diagram of AP2210
+
-Bandgap
Ref.
Current Limit
Thermal Shutdown
VIN
BYP
EN
GND
VOUT
Functional Block Diagram
(4)
A (B)
A for SOT-23-3
B for SOT-23-5
1 (2)
2 (5)3 (1)
(3)
Fixed Version
+
-Bandgap
Ref.
Current Limit
Thermal Shutdown
VIN
ADJ
EN
GND
VOUT
1
2
5
4
3
ADJ Version (For SOT-23-5)
300mA RF ULDO REGULATOR AP2210
Data Sheet
4
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Circuit Type
Package
E1: Lead Free
G1: Green
AP2210 -
TR: Tape and Reel
2.5: Fixed Output 2.5V
Ordering Information
Package Temperature
Range
Part Number Marking ID Packing
Type
Lead Free Green Lead Free Green
SOT-23-3 -40 to 125oC
AP2210N-2.5TRE1 AP2210N-2.5TRG1 EH2 GH2 Tape & Reel
AP2210N-2.8TRE1 AP2210N-2.8TRG1 EH3 GH3 Tape & Reel
AP2210N-3.0TRE1 AP2210N-3.0TRG1 EH4 GH4 Tape & Reel
AP2210N-3.3TRE1 AP2210N-3.3TRG1 EH5 GH5 Tape & Reel
AP2210N-3.6TRG1 GB7 Tape & Reel
AP2210N-4.0TRG1 GC7 Tape & Reel
AP2210N-5.0TRG1 GH9 Tape & Reel
SOT-23-5 -40 to 125oC
AP2210K-2.5TRE1 AP2210K-2.5TRG1 E5C G5C Tape & Reel
AP2210K-2.8TRE1 AP2210K-2.8TRG1 E5F G5F Tape & Reel
AP2210K-3.0TRE1 AP2210K-3.0TRG1 E5H G5H Tape & Reel
AP2210K-3.3TRE1 AP2210K-3.3TRG1 E5K G5K Tape & Reel
AP2210K-3.6TRG1 G5I Tape & Reel
AP2210K-4.0TRG1 G5J Tape & Reel
AP2210K-5.0TRG1 G5L Tape & Reel
AP2210K-ADJTRG1 G5M Tape & Reel
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
2.8: Fixed Output 2.8V
K: SOT-23-5
N: SOT-23-3
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
3.6: Fixed Output 3.6V
4.0: Fixed Output 4.0V
5.0: Fixed Output 5.0V
ADJ: Adjustable Output
300mA RF ULDO REGULATOR AP2210
Data Sheet
5
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Value Unit
Supply Input Voltage VIN 15 V
Enable Input Voltage VEN 15 V
Power Dissipation PDInternally Limited (Thermal Protection) W
Lead Temperature (Soldering, 10sec) TLEAD 260 oC
Junction Temperature TJ150 oC
Storage Temperature TSTG -65 to 150 oC
ESD (Machine Model) ESD 300 V
Thermal Resistance (No Heatsink) θJA
SOT-23-3 200
oC/W
SOT-23-5 200
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Parameter Symbol Min Max Unit
Supply Input Voltage VIN 2.5 13.2 V
Enable Input Voltage VEN 0 13.2 V
Operating Junction Temperature TJ-40 125 oC
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
300mA RF ULDO REGULATOR AP2210
Data Sheet
6
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T48 ppm/oC
Line Regulation VRLINE VIN=3.5V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
V
IN
=3.5V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
Electrical Characteristics (Continued)
AP2210-2.5 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
7
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=3.5V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-2.5 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
8
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T42.8 ppm/oC
Line Regulation VRLINE VIN=3.8V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
V
IN
=3.8V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-2.8 Electrical Characteristics
Electrical Characteristics (Continued)
300mA RF ULDO REGULATOR AP2210
Data Sheet
9
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
V
IN
=3.8V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-2.8 Electrical Characteristics
Electrical Characteristics (Continued)
300mA RF ULDO REGULATOR AP2210
Data Sheet
10
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
V
IN
=4V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-3.0 Electrical Characteristics
Electrical Characteristics (Continued)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T40 ppm/oC
Line Regulation VRLINE VIN=4V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
300mA RF ULDO REGULATOR AP2210
Data Sheet
11
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=4V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-3.0 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
300mA RF ULDO REGULATOR AP2210
Data Sheet
12
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T36.3 ppm/oC
Line Regulation VRLINE VIN=4.3V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
Electrical Characteristics (Continued)
V
IN
=4.3V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-3.3 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
13
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=4.3V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-3.3 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
14
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T48 ppm/oC
Line Regulation VRLINE VIN=4.6V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
V
IN
=4.6V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
Electrical Characteristics (Continued)
AP2210-3.6 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
15
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=4.6V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-3.6 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
16
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T48 ppm/oC
Line Regulation VRLINE VIN=5.0V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
V
IN
=5.0V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
Electrical Characteristics (Continued)
AP2210-4.0 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
17
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=5.0V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-4.0 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
18
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT
Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T48 ppm/oC
Line Regulation VRLINE VIN=6.0V to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Dropout Voltage (Note 5) VDROP
IOUT=100µA15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
Standby Current ISTD
VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260 HznV /
V
IN
=6.0V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
Electrical Characteristics (Continued)
AP2210-5.0 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
19
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Enable Input Logic-low Voltage VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IIL
VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high Current IIH
VIL≥2.0V 5 20 µA
VIL≥2.0V 25
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25
o
C) or 2% (-
40
o
C
≤
T
J
≤
125
o
C)
below its nominal value measured at 1V differential.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=6.0V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C (Note 2),
unless
otherwise specified.
AP2210-5.0 Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
20
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆VOUT/VOUT Variation from specified
VOUT
-1 1 %
-2 2
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T120 µV/oC
(∆VOUT/VOUT)/∆T48 ppm/oC
Line Regulation VRLINE VIN=
V
OUT
+1V
to 13.2V 1.5 4.5
mV
12
Load Regulation
(Note 4) VRLOAD IOUT=0.1mA to 300mA 16
mV
30
Standby Current ISTD VEN≤0.4V (shutdown) 0.01 1 µA
VEN≤0.18V (shutdown) 5
Ground Pin Current
(Note 6) IGND
VEN≥2.0V, IOUT=100µA100 150
µA
180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 410
15
Ripple Rejection PSRR f=100Hz, IOUT=100µA75dB
Current Limit ILIMIT VOUT=0V 450 900 mA
Output Noise eno IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND 260
Enable Input Logic-low
Vo l t a g e VIL Regulator shutdown 0.4 V
0.18
Enable Input Logic-high
Vo l t a g e VIH Regulator enabled 2.0 V
Enable Input Logic-low
Current IIL VIL≤0.4V 0.01 1 µA
VIL≤0.18V 2
Enable Input Logic-high
Current IIH VIL≥2.0V 5 20 µA
VIL≥2.0V 25
HznV /
V
IN
=V
OUT
+1V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C
(Note 2), unless
otherwise specified.
Electrical Characteristics (Continued)
AP2210-ADJ Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
21
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Note 2: Specifications in bold type are limited to
-40
o
C
≤
T
J
≤
125
o
C. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
V
IN
=V
OUT
+1V, I
OUT
=100
µ
A, C
IN
=1.0
µ
F, C
OUT
=2.2
µ
F, V
EN
≥
2.0V, T
J
=25
o
C,
Bold
typeface applies over
-40
o
C
≤
T
J
≤
125
o
C
(Note 2), unless
otherwise specified.
AP2210-ADJ Electrical Characteristics
300mA RF ULDO REGULATOR AP2210
Data Sheet
22
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
-60 -40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IOUT=50mA
IOUT=100mA
IOUT=150mA
IOUT=300mA
Ground Pin Current (mA)
Junction Temperature (oC)
AP2210-3.0
VIN=4V,CIN=1.0µF,COUT=2.2µF
Typical Performance Characteristics
-50 -25 0 25 50 75 100 125
2.9850
2.9875
2.9900
2.9925
2.9950
2.9975
3.0000
3.0025
3.0050
3.0075
3.0100
3.0125
3.0150
Output Voltage (V)
Junction Temperature (oC)
AP2210-3.0
VIN=4V, IOUT=10mA
CIN=1.0µF, COUT=2.2µF
Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature
Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature
0 50 100 150 200 250 300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Ground Pin Current (mA)
Output Current (mA)
TA=25oC
CIN=1.0µF, COUT=2.2µF
-60 -40 -20 0 20 40 60 80 100 120 140
0
50
100
150
200
250
300
350
400
450
500
550
CIN=1.0µF, COUT=2.2µF
Dropout Voltage (mv)
Junction Temperature (oC)
IOUT=50mA
IOUT=100mA
IOUT=150mA
IOUT=300mA
300mA RF ULDO REGULATOR AP2210
Data Sheet
23
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature
-50 -25 0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
20
Enable Current (µA)
Junction Temperature (oC)
AP2210-3.0
VIN=4V, CIN=1.0µF
COUT=2.2µF, IOUT=100µA
VEN=1.8V
VEN=2.0V
VEN=3.0V
VEN=3.7V
-50 -25 0 25 50 75 100 125
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VEN=logic high
VEN=logic low
AP2210-3.0
CIN=1.0µF, COUT=2.2µF
VIN=4V, IOUT=100µA
Enable Voltage (V)
Junction Temperature (oC)
10 100 1k 10k 100k 1M 10M
10
1
0.1
0.01
0.001
Frequency (Hz)
AP2210-3.0
VIN=4.5V, IOUT=10mA
CIN=1.0µF, COUT=2.2µF
CBYP=100pF
Output Noise ( )
0.0001
µ
V/ Hz
Figure 10. Output Noise
vs. Frequency
Figure 11. Line Transient
(Conditions: VIN=4 to 5V, VEN=2V, IOUT=1mA,
COUT=2.2µF)
AP2210-3.0
∆
V
OUT
(50mV/Div) V
IN
(0.5V/Div)
4
4.5
0
50
Time (20µs/Div)
5
5.5
-50
-100
300mA RF ULDO REGULATOR AP2210
Data Sheet
24
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 13. V
EN
vs. V
OUT
(Conditions: V
EN
=0 to 2V, V
IN
=4V, I
OUT
=30mA,
C
IN
=1.0
µF,
C
OUT
=2.2
µF
)
AP2210-3.0
Figure 14. PSRR vs. Frequency
0
2
0
2
V
OUT
(2V/Div) V
EN
(2V/Div)
Time (40µs/Div)
Figure 12. Load Transient
(Conditions: V
IN
=4V, V
EN
=2V,
I
OUT
=10mA to 300mA,
C
IN
=1.0
µF,
C
OUT
=2.2
µF
)
AP2210-3.0
∆
V
OUT
(50mV/Div)
0
-50
0
I
OUT
(200mA/Div)
200
Time (20µs/Div)
400
600
50
-100
4
6
-2
-4
10 100 1k 10k 100k 1M
0
10
20
30
40
50
60
70
80
90
100
PSRR (dB)
Frequency (Hz)
AP2210-3.0
VIN=4V, VRIPPLE=1VPP
IOUT=10mA, COUT=2.2µF
Figure 15. Power Dissipation vs. Ambient Temperature
25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Power Dissipation (W)
Ambient Temperature (oC)
AP2210-3.0
SOT-23-3 Package
No Heatsink
300mA RF ULDO REGULATOR AP2210
Data Sheet
25
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 17. ESR vs. Output Current
50 100 150 200 250 300
0.01
0.1
1
10
100
1000
ESR (Ω)
Output Current (mA)
COUT=1µF
No Bypass Capacitor
Stable Area
Figure 18. ESR vs. Output Current
50 100 150 200 250 300
0.01
0.1
1
10
100
1000
ESR (Ω)
Output Current (mA)
COUT=2.2µF
No Bypass Capacitor
Stable Area
25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Power Dissipation (W)
Ambient Temperature (oC)
AP2210-3.0
SOT-23-5 Package
No Heatsink
Figure 16. Power Dissipation vs. Ambient Temperature
Figure 19. ESR vs. Output Current
50 100 150 200 250 300
0.01
0.1
1
10
100
1000
ESR (Ω)
Output Current (mA)
COUT=4.7µF
No Bypass Capacitor
Stable Area
300mA RF ULDO REGULATOR AP2210
Data Sheet
26
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Typical Application
For Fixed Version
EN
GND
AP2210-3.0
VIN VOUT
BYP
VIN
VIN =4.0V
CIN
1.0 µF
COUT
2.2 µF
VOUT =3.0V
VOUT
100pF
CBYP
1
2
34
5
GND
AP2210-3.0
VIN VOUT
VIN
VIN =4.0V
CIN
1.0 µF
COUT
2.2 µF
VOUT =3.0V
VOUT
1
23
300mA RF ULDO REGULATOR AP2210
Data Sheet
27
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Figure 20. Typical Application of AP2210 (Note 7)
Typical Application (Continued)
Note 7: Dropout voltage is 250mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.25V is the minimum
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage
is VOUT+1V to 13.2V. For AP2210-3.0 version, its input voltage can be set from 4V(VOUT+1V) to 13.2V.
For Adjustable Version
VOUT=1.25V*(1+R2/R1)
EN
GND
AP2210-ADJ
VIN VOUT
ADJ
VIN
COUT
VOUT
CIN
VEN
R1
R2
1
2
34
5
300mA RF ULDO REGULATOR AP2210
Data Sheet
28
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Input Capacitor
A 1µF minimum capacitor is recommended to be
placed between VIN and GND.
Output Capacitor
It is required to prevent oscillation. 1.0µF minimum
is recommended when CBYP is unused. 2.2µF mini-
mum is recommended when CBYP is 100pF. The out-
put capacitor may be increased to improve transient
response.
Noise Bypass Capacitor
Bypass capacitor is connected to the internal voltage
reference. A small capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed. In order to keep the
output stability, it is recommended to use the bypass
capacitor no more than 100pF.
The start-up speed of the AP2210 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
CBYP and leave BYP open.
Power Dissipation
Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction tempera-
ture must be within the range specified under abso-
lute maximum ratings to avoid thermal shutdown.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
TJ = PD*θJA + TA
PD=(VIN-VOUT)*IOUT+VIN*IGND
Where: TJ≤TJ(max), TJ(max) is absolute maximum rat-
ings for the junction temperature; VIN*IGND can be
ignored due to its small value.
TJ(max) is 150oC, θJA is 200oC/W, no heatsink is
required since the package alone will dissipate
enough heat to satisfy these requirements unless the
calculated value for power dissipation exceeds the
limit.
Example (3.0V version):
IOUT=300mA, TA=50oC, VIN(Max) is:
(150oC-50oC)/(0.3A*200oC/W)+3.0V=4.67V
Therefore, for good performance, please make sure
that input voltage is less than 4.67V without heatsink
when TA=50oC.
Application Information
300mA RF ULDO REGULATOR AP2210
Data Sheet
29
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions
SOT-23-3 Unit: mm(inch)
2.820(0.111)
3.020(0.119)
2.650(0.104)
2.950(0.116)
0.950(0.037)
TYP
0.300(0.012)
0.500(0.020)
1.500(0.059)
1.700(0.067)
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.600(0.024)
0.100(0.004)
0.200(0.008)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
1.450(0.057)
MAX.
0.200(0.008)
0
8°
°
300mA RF ULDO REGULATOR AP2210
Data Sheet
30
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions (Continued)
SOT-23-5 Unit: mm(inch)
2.820(0.111)
2.650(0.104)
1.500(0.059)
0.000(0.000)
0.300(0.012)
0.950(0.037)
0.900(0.035)
0.100(0.004)
0.200(0.008)
0.300(0.012)
8°
0°
3.020(0.119)
1.700(0.067)
2.950(0.116)
0.400(0.016)
0.150(0.006)
1.300(0.051)
0.200(0.008)
0.600(0.024)
1.800(0.071)
2.000(0.079)
0.700(0.028)
REF
TYP
1.450(0.057)
MAX
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277
