DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary BVDSS 20V Features and Benefits RDS(ON) ID Max (Note 6) 175m @ VGS = 4.5V 1.40A @ TA = +25C 240m @ VGS = 2.5V 1.20A @ TA = +25C 360m @ VGS = 1.8V 1.0A @ TA = +25C On Resistance <200m Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) ESD Protected Gate Mechanical Data Case: SOT23 This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.08 grams (Approximate) Description and Applications Load Switch SOT23 D ESD PROTECTED S G Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN2300U-7 Notes: Marking N2U Reel Size (inches) 7 Tape Width (mm) 8 Quantity Per Reel 3000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Date Code Key Year Code Month Code 2011 Y Jan 1 ~ ~ Feb 2 DMN2300U Document number: DS35309 Rev. 3 - 2 Mar 3 N2U = Product Type Marking Code YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) YM N2U 2019 G Apr 4 May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 Aug 8 2022 J Sep 9 Oct O 2023 K Nov N Dec D June 2019 (c) Diodes Incorporated DMN2300U Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current Symbol VDSS VGSS Value 20 8 Unit V V ID 1.40 1.01 1.24 A IDM 11 A Symbol Value 0.43 0.55 288 228 -55 to +150 Unit W W C/W C/W C TA = +25C (Note 6) TA = +85C (Note 6) TA = +25C (Note 5) Pulsed Drain Current (Note 7) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) (Note 6) (Note 5) (Note 6) PD RJA Operating and Storage Temperature Range Notes: TJ, TSTG 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on 25mm 25mm square copper plate with FR-4 substrate PC board, 2oz copper. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. Thermal Characteristics 100 100 Single Pulse Rthja 220C/W RJA ==220/W Rthja(t) RJA(t) ==RRthja*r(t) JA * r(t) T TAA == PP*Rthja (t) TJJ -- T * RJA(t) 80 10 70 60 50 40 30 20 0.001 0.1 10 1000 t1, PULSE T1, PULSEDURATION DURATION SECTION SECTION (sec) (sec) Fig. 1 Single Maximum Power Dissipation DMN2300U Document number: DS35309 Rev. 3 - 2 2 of 7 www.diodes.com ID (A) @ PW = 10ms 1 ID (A) @ DC ID (A) @ PW = 10s 0.1 0.01 10 0 0.00001 ID (A) @ 100 PW W == 100s ID (A) @ PW = 1ms ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 90 TJ(MAX) ==150 150C TJ(MAX) 25C TATA= =25 Single Pulse Single Pulse 0.001 0.01 ID (A) @ PW 10 W = 10s ID (A) @ PW = 1s ID (A) @ PW = 100ms 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 June 2019 (c) Diodes Incorporated DMN2300U 1 R(t), TRANSIENT THERMAL RESISTANCE E C N A T IS IS E R L A M R E H T T N E IS N A R T ,) t( R r(t) @ D=0.5 r(t) @ D=0.3 r(t) @ D=0.9 r(t) @ D=0.7 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 D=0.01 0.01 r(t) @ D=0.01 RJAR(t) ==r(t) * RJA (t) r(t)*R JAJA RJAR==220/W JA220C/W Duty Cycle, D= / t2 Duty Cycle, D t1 = t1/t2 r(t) @ D=0.005 r(t) @ D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance Fig. 3 Transient Thermal Resistance Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 10 V A A VGS = 0V, ID = 10A VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) 0.45 -- V Static Drain-Source On-Resistance RDS(ON) -- -- |Yfs| VSD 40 -- -- 0.7 0.95 175 240 360 -- 1.2 VDS = VGS, ID = 250A VGS = 4.5V, ID = 300mA VGS = 2.5V, ID = 250mA VGS = 1.8V, ID = 100mA VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF -- -- -- -- -- -- -- -- -- -- -- 67.6 9.7 7.5 70 1.6 0.2 0.2 3.5 2.8 38 13 -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note: m mS V pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6 8. Short duration pulse test used to minimize self-heating effect. DMN2300U Document number: DS35309 Rev. 3 - 2 3 of 7 www.diodes.com June 2019 (c) Diodes Incorporated DMN2300U 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V )A ( T N E R R U C N IA R D ,D I VGS = 1.8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V 1.5 VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150C 0.5 TA = 125C VGS = 1.2V TA = 85C TA = 25C TA = -55C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 5 0.4 0.2 VGS = 2.5V VGS = 4.5V 0.1 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE TEMPERATURE ( ( TTAA,, AMBIENT C)) Fig. 8 On-Resistance Variation with Temperature DMN2300U Document number: DS35309 Rev. 3 - 2 4 of 7 www.diodes.com 3 0.8 VGS = 4.5V 0.6 0.4 TA = 125C TA = 150C 0.2 TA = 85C TA = 25C TA = -55C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDSON , DRAIN-SOURCE ON-RESISTANCE () VGS = 4.5V ID = 1.0A 1.4 0.5 1 1.5 2 2.5 VGS , GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic O (S D R 0 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE RDSON, DRAIN-SOURCE (NORMALIZED) ON-RESISTANCE (NORMALIZED) 0 ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.3 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.25 0.5 0.75 1 1.25 1.5 1.75 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 2 0.8 0.6 0.4 VGS = 2.5V ID = 500mA 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TAA, AMBIENT TEMPERATURE TEMPERATURE ( (C)) Fig. 9 On-Resistance Variation with Temperature June 2019 (c) Diodes Incorporated DMN2300U 2.0 1.0 1.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = 1mA 0.8 0.6 250 IDID==250A 0.4 1.2 25 TT = =25 C AA 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 AMBIENTTEMPERATURE TEMPERATURE( ( TTAA, ,AMBIENT C)) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0 1,000 0.2 0.4 0.6 0.8 1.0 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 100,000 )A 10,000 n ( T N E R 1,000 R U C E G A 100 K A E L ,S S G 10 I IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) T TAA = 125 125C 100 85 TTAA== 85 C 10 TAA = = 25 25C T TAA == -55 -55C T 1 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Leakage Current vs. Drain-Source Voltage TA = 150C T A = 125C TA = 85C TA = 25C TA = -55C 1 20 1000 2 4 6 8 10 12 VGS , GATE-SOURCE VOLTAGE (V) Fig.13 Leakage Current vs. Gate-Source Voltage 8 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 100 Coss 10 Crss VDS = 15V ID = 1A 6 4 2 0 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Typical Junction Capacitance DMN2300U Document number: DS35309 Rev. 3 - 2 20 5 of 7 www.diodes.com 0 0.5 1 1.5 2 2.5 QQgg,, TOTAL TOTALGATE GATECHARGE CHARGE(nC) (nC) Fig. Fig.14 15Gate-Charge Gate ChargeCharacteristics Characteristics 3 June 2019 (c) Diodes Incorporated DMN2300U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DMN2300U Document number: DS35309 Rev. 3 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com June 2019 (c) Diodes Incorporated DMN2300U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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