DMN2300U
Document number: DS35309 Rev. 3 - 2
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June 2019
© Diodes Incorporated
DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
BVDSS
RDS(ON)
ID Max (Note 6)
20V
175mΩ @ VGS = 4.5V
1.40A @ TA = +25°C
240mΩ @ VGS = 2.5V
1.20A @ TA = +25°C
360mΩ @ VGS = 1.8V
1.0A @ TA = +25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load Switch
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
DMN2300U-7
N2U
7
8
3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2011
~
2019
2020
2021
2022
2023
Code
Y
~
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
SOT23
Top View
Top View
Equivalent Circuit
D
GS
N2U
YM
ESD PROTECTED
e3
DMN2300U
Document number: DS35309 Rev. 3 - 2
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DMN2300U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
Steady
State
TA = +25°C (Note 6)
TA = +85°C (Note 6)
TA = +25°C (Note 5)
ID
1.40
1.01
1.24
A
Pulsed Drain Current (Note 7)
IDM
11
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
0.43
W
(Note 6)
0.55
W
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
288
°C/W
(Note 6)
228
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on 25mm 25mm square copper plate with FR-4 substrate PC board, 2oz copper.
7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
Thermal Characteristics
0
10
20
30
40
50
60
70
80
90
100
0.00001 0.001 0.1 10 1000
Single Pulse
Rthja = 220C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)
JA
P(pk), PEAK TRANSIENT POWER (W)
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
100
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
DS
I (A) @
P = 10s
D
W
I (A) @ DC
D
I (A) @
P = 1s
D
W
I (A) @
P = 100ms
D
W
I (A) @
P = 10ms
D
W
I (A) @
P = 1ms
D
W
I (A) @
P = 100
祍
D
W
I (A) @
P = 10
祍
D
W
T = 150
癈
T = 25
癈
Single Pulse
J(MAX)
A
0.001
0.01
0.1
1
10
I , DRAIN CURRENT (A)
D
TJ(MAX) = 150°C
TA = 25°C
Single Pulse
PW = 100µs
PW = 10µs
RθJA = 220℃/W
RθJA(t) = RθJA * r(t)
TJ - TA = P * RθJA(t)
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, PULSE DURATION SECTION (sec)
DMN2300U
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DMN2300U
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
20
—
—
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1
μA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
0.45
—
0.95
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
—
175
mΩ
VGS = 4.5V, ID = 300mA
240
VGS = 2.5V, ID = 250mA
360
VGS = 1.8V, ID = 100mA
Forward Transfer Admittance
|Yfs|
40
—
—
mS
VDS = 3V, ID = 30mA
Diode Forward Voltage
VSD
—
0.7
1.2
V
VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
67.6
—
pF
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
9.7
—
pF
Reverse Transfer Capacitance
Crss
—
7.5
—
pF
Gate Resistance
Rg
—
70
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
1.6
—
nC
VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge
Qgs
—
0.2
—
nC
Gate-Drain Charge
Qgd
—
0.2
—
nC
Turn-On Delay Time
tD(ON)
—
3.5
—
ns
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-On Rise Time
tR
—
2.8
—
ns
Turn-Off Delay Time
tD(OFF)
—
38
—
ns
Turn-Off Fall Time
tF
—
13
—
ns
Note: 8. Short duration pulse test used to minimize self-heating effect.
0.001
0.01
0.1
1
R
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
I
T
A
N
C
E
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
R (t) = r(t)*R
R = 220C/W
Duty Cycle, D = t1/t2

JAJA
JA
r(t) @ D=Single Pulse
r(t) @ D=0.005
r(t) @ D=0.01
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
r(t) @ D=0.01
r(t) @ D=0.02
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
RθJA(t) = r(t) * RθJA
RθJA = 220℃/W
Duty Cycle, D = t1 / t2
R(t), TRANSIENT THERMAL RESISTANCE
DMN2300U
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DMN2300U
0 1 2 3 4 5
Fig. 4 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I , DRAIN CURRENT (A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.1
0.2
0.3
0.4
0 0.4 0.8 1.2 1.6 2
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
Fig. 9 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
0
0.2
0.4
0.6
0.8
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
I , DRAIN CURRENT (A)
D
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
0
0.2
0.4
0.6
0.8
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
0
0.5
1
1.5
2
2.5
3
Fig. 5 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
0.6
0.8
1.0
1.2
1.4
1.6
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TA, AMBIENT TEMPERATURE (°C )
TA, AMBIENT TEMPERATURE (°C )
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
DMN2300U
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DMN2300U
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I , SOURCE CURRENT (A)
S
T = 25
癈
A
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (
癈
)
A
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250
礎
D
I = 1mA
D
1
10
100
1000
0 4 8 12 16 20
CT, JUNCTION CAPACITANCE (pF)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
f = 1MHz
Ciss
Coss
Crss
1
10
100
1,000
10,000
100,000
2
4
6
8
10
12
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.13 Leakage Current vs. Gate-Source Voltage
I
,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
G
S
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 14 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 1A
DS
D
Qg, TOTAL GATE CHARGE (nC)
Fig. 15 Gate Charge Characteristics
2 4 6 8 10 12 14 16 18 20
1
10
100
1,000
I , LEAKAGE CURRENT (nA)
DSS
Fig. 12 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25
癈
A
T = 85
癈
A
T = 125
癈
A
T = -55
癈
A
TA, AMBIENT TEMPERATURE (°C )
ID = 250µA
TA = 25°C
IGSS, LEAKAGE CURRENT (nA)
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
DMN2300U
Document number: DS35309 Rev. 3 - 2
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DMN2300U
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
DMN2300U
Document number: DS35309 Rev. 3 - 2
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© Diodes Incorporated
DMN2300U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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