AUIRF9540N
PD - 97626
www.irf.com 1
06/07/11
AUTOMOTIVE GRADE
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF9540N
S
D
G
D
Features
lAdvanced Planar Technology
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed
up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
-100V
R
DS(on)
max. 0.117Ω
I
D
-23A
S
D
G
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
g
––– 1.1
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-55 to + 175
300
10 lbf
y
in (1.1N
y
m)
140
0.91
± 20
Max.
-23
-16
-76
-5.0
14
430
-11
AUIRF9540N
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 7.1mH, RG = 25Ω, IAS = -11A. (See Figure 12)
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-100
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.117
Ω
V
GS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
5.3
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
-25
μA
–––
–––
-250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
–––
97
Q
gs
Gate-to-Source Charge
–––
–––
15
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
51
t
d(on)
Turn-On Delay Time
–––
15
–––
t
r
Rise Time
–––
67
–––
t
d(off)
Turn-Off Delay Time
–––
51
–––
ns
t
f
Fall Time
–––
51
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
1300
–––
C
oss
Output Capacitance
–––
400
–––
pF
C
rss
Reverse Transfer Capacitance
–––
240
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
-23
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
-76
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
-1.6
V
t
rr
Reverse Recovery Time
–––
150
220
ns
Q
rr
Reverse Recovery Charge
–––
830
1200
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
V
DS
= -50V, I
D
= -11A
I
D
= -11A
V
DS
= -80V
V
GS
= 20V
V
GS
= -20V
V
GS
= -10V, See Fig. 6 & 13
f
I
D
= -11A
R
G
= 5.1
Ω
TJ = 25°C, IS = -11A, VGS = 0V
f
showing the
integral reverse
p-n junction diode.
Conditions
R
D
= 4.2
Ω,
See Fig. 10
f
V
GS
= 0V
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -11A
f
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
V
DD
= -50V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
TJ = 25°C, IF = -11A
S
D
G
S
D
G
AUIRF9540N
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
Qualification Information
†
TO-220 N/A
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 500V)
†††
AEC-Q101-002
Human Body Model Class H1 (+/- 2000V)
†††
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF9540N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF9540N
10 www.irf.com
Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form
Quantity
AUIRF9540N
TO-220
Tube
50
AUIRF9540N
AUIRF9540N
www.irf.com 11
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