BYG23T-M3
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Revision: 19-Feb-15 1Document Number: 89429
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Ultrafast Avalanche SMD Rectifiers
TYPICAL APPLICATIONS
For use in high voltage, high frequency rectification specially
suited for freewheeling, clamping, snubbering in power
supply, ignition drive of HID, UHP and industrial ballast and
snubber for PDP TV power supply application.
FEATURES
• Glass passivated pellet chip junction
• Low profile package
• Ideal for automated placement
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
• Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 1300 V
IFSM 18 A
trr 75 ns
ER5 mJ
VF at IF = 1.0 A (TA = 125 °C) 1.39 V
TJ max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23T UNIT
Device marking code BYG23T
Maximum repetitive peak reverse voltage VRRM 1300 V
Maximum DC forward current (fig.1) IF (1) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 18 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C ER5mJ
Maximum operating junction temperature TJ150 °C
Storage temperature range TSTG -55 to +150 °C
BYG23T-M3
www.vishay.com Vishay General Semiconductor
Revision: 19-Feb-15 2Document Number: 89429
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount.
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage (1) IF = 1.0 A TA = 25 °C VF
1.74 1.9 V
TA = 125 °C 1.39 1.65
Reverse current (2) VR = 1300 V TA = 25 °C IR
-5.0
μA
TA = 125 °C 2.9 50
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 25 °C trr 65 75 ns
Forward recovery time IF = 1.5 A, dI/dt = 12 A/μs,
VF = 1.1 x VF max. TA = 25 °C tfr 620 -
Peak forward voltage VFP 9.0 - V
Typical junction capacitance 4.0 V, 1 MHz CJ9.0 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23T UNIT
Typical thermal resistance (1) RJA 120 °C/W
RJM 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE
BYG23T-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYG23T-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
BYG23T-M3
www.vishay.com Vishay General Semiconductor
Revision: 19-Feb-15 3Document Number: 89429
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
0.2
0.4
0.6
0.8
1.0
1.2
1007550250 125 150 175
T
M
- Mount Temperature (°C)
DC Forward Current (A)
TM - Measured
at the Lead terminal
2.0
0.8
0.6
0.4
0.2
0
00.20.1 0.4 0.5
0.3 0.6 0.7 0.8 0.9 1.0 1.1
Average Forward Current (A)
Average Power Loss (W)
1.8
1.6
1.4
1.2
1.0
1.2
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
20
10
1
0.1
0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TA = 150 °C
TA = 125 °C
TA = 25 °C
100
10 20 30 40 50 60 70 9080 100
10
1
0.1
0.01
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
TA = 150 °C
TA = 125 °C
TA = 25 °C
100
10
1
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vstg = 50 mVp-p
1000
100
10
1
0.10.01 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
BYG23T-M3
www.vishay.com Vishay General Semiconductor
Revision: 19-Feb-15 4Document Number: 89429
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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