PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET(R) Power MOSFET V(BR)DSS D 40V RDS(on) typ. max. G I D (Silicon Limited) Description This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. I D (Package Limited) S TO-220AB IRF1404ZPbF D2Pak IRF1404ZSPbF 2.7m 3.7m l 180A 120A TO-262 IRF1404ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ T STG Max. c Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy d c g h W/C V mJ A mJ C i Parameter RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) i W -55 to + 175 Thermal Resistance Junction-to-Case A 1.3 20 330 480 See Fig.12a, 12b, 15, 16 Operating Junction and Storage Temperature Range RJC Units l l l 710 200 Power Dissipation Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw www.irf.com 180 120 120 Continuous Drain Current, VGS @ 10V (S ilicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (P ackage L imited) Pulsed Drain Current j i 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Typ. Max. --- 0.75 0.50 --- --- 62 --- 40 k Units C/W 1 06/19/12 IRF1404Z/S/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 40 --- --- 2.0 170 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.033 2.7 --- --- --- --- --- --- 100 31 42 18 110 36 58 4.5 --- --- 3.7 4.0 --- 20 250 200 -200 150 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 4340 1030 550 3300 920 1350 --- --- --- --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V V(BR)DSS V(BR)DSS /T J RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A ** V VDS = VGS , ID = 150A V VDS = 25V, ID = 75A** A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, T J = 125C nA VGS = 20V VGS = -20V ID = 75A** nC VDS = 32V VGS = 10V VDD = 20V ID = 75A** ns RG = 3.0 e e e VGS = 10V Between lead, nH pF f Source-Drain Ratings and Characteristics Min. Typ. Max. Units IS Continuous Source Current Parameter --- --- 120 ISM (Body Diode) Pulsed Source Current --- --- 750 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 28 34 1.3 42 51 2 c l Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. T J = 25C, IS = 75A**,VGS = 0V T J = 25C, IF = 75A**, VDD = 20V di/dt = 100A/s e e Intrins ic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF1404Z/S/LPbF 1000 1000 VGS 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS TOP 10 4.5V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20s PULSE WIDTH Tj = 175C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com T J = 175C 160 120 T J = 25C 80 40 VDS = 15V 20s PULSE WIDTH 0 11.0 0 40 80 120 160 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF1404Z/S/LPbF 8000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 4000 2000 Coss Crss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 0 0 1 10 0 100 VDS, Drain-to-Source Voltage (V) 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 T J = 175C 100.0 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 40 Q G Total Gate Charge (nC) 1000 100 100sec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec Tc = 25C Tj = 175C Single Pulse 0 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1404Z/S/LPbF 200 2.0 ID , Drain Current (A) 160 120 80 40 0 25 50 75 100 125 150 175 T C , Case Temperature (C) ID = 75A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1404Z/S/LPbF DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 600 15V TOP 500 BOTTOM ID 31A 53A 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V ID = 250A 3.0 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF1404Z/S/LPbF Avalanche Current (A) 10000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Duty Cycle = Single Pulse 1000 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF1404Z/S/LPbF D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF1404Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE AS SEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF1404Z/S/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASSE MBLY LINE "L" INT ERNAT IONAL RECT IF IE R LOGO ASSE MBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNAT IONAL RECTIF IER LOGO ASSEMBLY LOT CODE PART NUMBER F 530S DAT E CODE P = DESIGNAT ES LEAD - F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRF1404Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBL ED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S ITE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 IRF1404Z/S/LPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by This is only applied to TO-220AB pakcage. max. junction temperature. (See fig. 11). This is applied to D2Pak, when mounted on 1" square PCB (FR Limited by TJmax, starting TJ = 25C, L = 0.11mH 4 or G-10 Material). For recommended footprint and soldering RG = 25, IAS = 75A, VGS =10V. Part not techniques refer to application note #AN-994. recommended for use above this value. TO-220 device will have an Rth value of 0.65C/W. Pulse width 1.0ms; duty cycle 2%. Calculated continuous current based on maximum allowable Coss eff. is a fixed capacitance that gives the junction temperature. Bond wire current limit is 120A. Note that same charging time as Coss while VDS is rising current limitations arising from heating of the device leads may from 0 to 80% VDSS . occur with some lead mounting arrangements. Limited by TJmax , see Fig.12a, 12b, 15, 16 for ** All AC and DC test condition based on former Package limited typical repetitive avalanche performance. current of 75A. This value determined from sample failure population. 100% tested to this value in production. Data and specifications subject to change without notice. This product has been designed and qualified for theIndustrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2012 12 www.irf.com