CCD area image sensor
S9970/S9971 series
2
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Tstg -50 - +70 °C
OD voltage VOD -0.5 - +25 V
RD voltage VRD -0.5 - +18 V
ISV voltage VISV -0.5 - +18 V
ISH voltage VISH -0.5 - +18 V
IGV voltage VIG1V, VIG2V -15 - +15 V
IGH voltage VIG1H, VIG2H -15 - +15 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1V, VP2V -15 - +15 V
Horizontal clock voltage VP1H, VP2H -15 - +15 V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 11.5 12 12.5 V
Output gate voltage VOG 1 3 5 V
Substrate voltage VSS - 0 - V
Test point (vertical input source) VISV - VRD - V
Test point (horizontal input source) VISH - VRD - V
Test point (vertical input gate) VIG1V, VIG2V -8 0 - V
Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V
High VP1VH, VP2VH 0 4 6
Vertical shift register
clock voltage Low VP1VL, VP2VL -9 -8 -7
V
High VP1HH, VP2HH 0 4 6 Horizontal shift register
clock voltage Low VP1HL, VP2HL -9 -8 -7 V
High VSGH 0 4 6
Summing gate voltage Low VSGL -9 -8 -7
V
High VRGH 0 4 6
Reset gate voltage Low VRGL -9 -8 -7 V
High VTGH 0 4 6
Transfer gate voltage Low VTGL -9 -8 -7
V
External load resistance RL 20 22 24 kΩ
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - 0.1 1 MHz
S9970/S9971-0906 - 750 -
S9970/S9971-1006 - 1500 -
S9970/S9971-1007 - 3000 -
Vertical shift register
capacitance
S9970/S9971-1008
CP1V, CP2V
- 6000 -
pF
S9970/S9971-0906 - 100 -
S9970/S9971-1006 - 180 -
S9970/S9971-1007 - 180 -
Horizontal shift register
capacitance
S9970/S9971-1008
CP1H, CP2H
- 180 -
pF
Summing gate capacitance CSG - 7 - pF
Reset gate capacitance CRG - 7 - pF
S9970/S9971-0906 - 60 -
S9970/S9971-1006 - 100 -
S9970/S9971-1007 - 100 -
Transfer gate
capacitance
S9970/S9971-1008
CTG
- 100 -
pF
Transfer efficiency*2 CTE 0.99995 0.99999 - -
DC output level Vout 12 15 18 V
Output impedance Zo - 5 - kΩ
Power dissipation*3 P - 15 - mW
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance