2N3382 Transistors P-Channel JFET Military/High-RelN V(BR)DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (oC)150 I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)5.0 @Vgs (test) (V)0 @V(DS) (V) (Test Condition)5.0 @I(D) (A) (Test Condition)1.0u I(DSS) Min. (A)30m I(DSS) Max. (A) @V(DS) (V) (Test Condition)10 r(DS)on Max. (Ohms)300 g(fs) Min. (S) Trans. conduct.4.5m g(fs) Max; (S) Trans. conduct;12m