Rev.3.00 Sep 07, 2005 page 1 of 8
HAF2011(L), HAF2011(S)
Silicon N Channel MOS FET Series
Power Switching REJ03G1138-0300
(Previous : AD E- 208-7 38 A)
Rev.3.00
Sep 07, 2005
Description
This FET has the over te mperature shut-down capability se nsing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit op eration to shut-do wn
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch t ype shut-down op eration (Need 0 voltage recover y)
Outline
RENESAS Package code:
PRSS0004AE-A
(Package name:
LDPAK (L) )
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK (S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
Gate resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
D
S
G
123
4
123
4
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 60 V
VGSS 16 V Gate to source voltage VGSS –2.5 V
Drain current ID 40 A
Drain peak current ID (pulse) Note 1 80 A
Body-drain diode reverse drain current IDR 40 A
Channel dissipation Pch Note 2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
VIH 3.5 — — V Input voltage VIL — — 1.2 V
IIH1 — — 100 µA Vi = 8 V, VDS = 0
IIH2 — — 50 µA Vi = 3.5 V, VDS = 0
Input current
(Gate non shut down) IIL — — 1 µA Vi = 1.2 V, VDS = 0
IIH (sd) 1 — 0.8 — mA Vi = 8 V, VDS = 0 Input current
(Gate shut down) IIH (sd) 2 — 0.35 — mA Vi = 3.5 V, VDS = 0
Shut down temperature Tsd — 175 — °C Channel temperature
Gate operation voltage VOP 3.5 — 12 V
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
ID1 15 — — A VGS = 3.5 V, VDS = 2 V Drain current ID2 — — 10 mA VGS = 1.2 V, VDS = 2 V
Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0
V (BR) GSS 16 — — V IG = 300 µA, VDS = 0 Gate to source breakdown voltage V (BR) GSS –2.5 — — V IG = –100 µA, VDS = 0
IGSS1 — — 100 µA VGS = 8 V, VDS = 0
IGSS2 — — 50 µA VGS = 3.5 V, VDS = 0
IGSS3 — — 1 µA VGS = 1.2 V, VDS = 0
Gate to source leak current
IGSS4 — — –100 µA VGS = –2.4 V, VDS = 0
IGS (op) 1 — 0.8 — mA VGS = 8 V, VDS = 0 Input current (shut dow n) IGS (op) 2 — 0.35 — mA VGS = 3.5 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff volta ge VGS (off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V
RDS (on) — 25 33 mΩ I
D = 20 A, VGS = 4 V Note 3 Static drain to source on state resistance RDS (on) — 15 20 mΩ I
D = 20 A, VGS = 10 V Note 3
Forward transfer admittance |yfs| 8 16 — S ID = 20 A, VDS = 10 V Note 3
Output capacitance Coss — 940 — pF VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 10.7 — µs
Rise time tr — 66 — µs
Turn-off delay time td (off) — 15.5 — µs
Fall time tf — 19 — µs
ID = 20 A
VGS = 5 V
RL = 1.5 Ω
Body-drain diode forward voltage VDF — 1 — V IF = 40 A, VGS = 0
Body-drain diode reverse recovery time trr — 200 — ns IF = 40 A, VGS = 0
diF/dt = 50 A/µs
Over load shut down operation time Note4 t
os1 — 1 — ms VGS = 5 V, VDD = 16 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 4 of 8
Main Characteristics
80
60
40
20
0
050 100 150 200
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5 1 2 5 10 20 50 100
100
80
60
40
20
0
2046810
10 V
VGS = 3.5 V
0
0
12345
75°C
Ta = 25°C
10 µs
100 µs
1 ms
PW = 10 ms
Operation in
this area is
limited by RDS (on)
50
40
30
20
10
8 V
6 V
5 V
4 V
VDS = 10 V
Pulse Test
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
2046810
50
12 51020 50100
20
10
2
5
1
10 A
ID = 20 A
5 A
200
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
Drain Current ID (A)
Drain to Source on State Resistance
RDS (on) (mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
DC Operation (Tc = 25°C)
Tc = –25°C
25°C
Pulse Test
VGS = 4 V
10 V
Thermal shut down
Operation area
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 5 of 8
0.10
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.02
0.04
0.06
0.08
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
10 V
V
GS
= 4 V
I
D
= 20 A
I
D
= 20 A
5 A, 10 A
5 A, 10 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
50
10
20
5
1
2
0.5 1 2 5 10 20 50
Tc = –25°C
75°C
V
DS
= 10 V
Pulse Test
25°C
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
0.5 1 2 5 10 20 50
1000
500
200
50
100
20
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
0 1020304050
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Coss
V
GS
= 0
f = 1 MHz
50
0
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
0
10
20
30
40
Reverse Drain Current vs.
Source to Drain Voltage
0.4 0.8 1.2 1.6 2.0
V
GS
= 5 V
1000
500
200
50
100
20
10 12 10520500.5
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
Pulse Test
tf
tr
td(off)
td(on)
0 V
V
GS
= 5 V, V
DD
= 30 V
PW = 300 µs, duty ≤ 1 %
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 6 of 8
12
10
8
4
6
2
0
0.1 100
200
180
160
140
120
0
100
246810
I
D
= 5 A
110
Gate to Source Voltage V
GS
(V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Time of Load-Short Test PW (S)
Shutdown Case Temperature Tc (°C)
Shutdown Case Temperature vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.01
0.02
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
16 V
V
DD
= 9 V
Vin Monitor
D.U.T.
Vin
5 V 50 Ω
R
L
Vout
Monitor
V
DD
= 30 V
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 7 of 8
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
HAF2011(L), HAF2011(S)
Rev.3.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
HAF2011-90L Max: 50 pcs/sack Sack
HAF2011-90S Max: 50 pcs/sack Sack
HAF2011-90STL 1000 pcs/Reel Embossed tape
HAF2011-90STR 1000 pcs/Reel Embossed tape
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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Colophon .3.0
