2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR Ratings 600 600 11 44 30 11 439.1 7 dV DS /dt dV/dt -di/dt PD Tch Tstg VISO 20 5 100 70 2.16 +150 -55 to +150 2 Unit V V A A V A mJ Remarks Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Drain(D) VGS=-30V Note *1 Note *2 Gate(G) Source(S) Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=5A,L=32.2mH, mJ Note *3 kV/s kV/s A/s W VDS< = 600V Note *4 Note *5 Tc=25C Ta=25C VCC=60V,RG=50 EAS limited by maximum channel temperature and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by C C kVrms t=60sec, f=60Hz graph. Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS =600V VGS=0V VDS =480V VGS=0V VGS=30V VDS=0V ID=5.5A VGS=10V maximum channel temperature. See to the `Transient Thermal impedance' < -ID, -di/dt=100A/s,VCC= < BVDSS,Tch= < 150C Note *4:IF = < -ID, dv/dt=5kV/s,VCC= < 150C < BVDSS,Tch= Note *5:IF= Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Equivalent circuit schematic Typ. 600 3.0 5.0 25 2.0 100 0.80 Tch=25C Tch=125C ID=5.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=5.5A VGS=10V 5 RGS=10 VCC =300V ID=11A VGS=10V IF=11A VGS=0V Tch=25C IF=11A VGS=0V -di/dt=100A/s Tch=25C Max. 0.62 10 1100 1650 150 225 8 12 17 26 7 11 40 60 8 12 30 45 9 13.5 10 15 1.00 1.50 120 250 0.6 1.5 Units V V A mA nA S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.786 58 Units C/W C/W 1 2SK3929-01MR FUJI POWER MOSFET Characteristics 80 Allowable Power Dissipation PD=f(Tc) 24 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20 20V 10V 7.5V 16 7V 70 60 ID [A] PD [W] 50 40 12 30 8 6.5V 20 4 VGS=6V 10 0 0 0 25 50 75 100 125 0 150 5 10 15 20 25 VDS [V] Tc [C] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0.1 0.01 0.01 0 1 2 3 4 5 6 7 8 9 10 0.1 1 VGS[V] 1.7 100 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 2.2 1.6 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V 2.0 7.0V VGS=6.5V 1.5 1.8 1.4 1.6 1.3 7.5V 8V 10V 20V 1.2 1.1 1.0 RDS(on) [ ] RDS(on) [ ] 10 1.4 max. 1.2 1.0 typ. 0.8 0.9 0.6 0.8 0.7 0.4 0.6 0.2 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3929-01MR 7 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 24 6 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25C 20 Vcc= 120V max. 300V 16 4 VGS [V] VGS(th) [V] 5 min. 3 480V 12 8 2 4 1 0 0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 Tch [C] 10n 40 50 60 70 80 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 1n IF [A] 100p Coss 1 10p Crss 1p -1 10 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 0.75 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 500 1.75 2.00 EAV [mJ] td(off) td(on) 10 1.50 IAS=5A 400 2 1.25 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A tf 10 1.00 VSD [V] VDS [V] t [ns] C [F] 10 300 I =7A AS 200 IAS=11A 1 tr 100 10 0 10 0 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3929-01MR 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=60V Single Pulse -1 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4