TOUCCON vev:ccs. 0. 1177 BLUE HERON BLVD. @ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 @ TLX: 51-3435 @FAX: (407) 863-5946 PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 6OOV, L7A. 0.400 SDF 17N60 GAF PARAMETER SYMBOL UNITS Drain-source Volt.{1) VDSS 600 Vdc Drain-Gate Voltage (Ros=1.0Ma) (1) VOGR 600 Vac Gate-Source Voltage Continuous VGS +20 Vde rein seecsn! Continuous ID 17 Ade Drain Current Pulsed(3) 1DM 68 A Total Power Dissipation PD 300 W Power Dissipation e Derating > 25C 2.4 W/C Operating & Storage Temp. | TU/Tsig -55 TO +150 C Thermal Resistance Rthdec 0.42 C/W Max.Lead temperature TL 300 Cc FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 ELECTRICAL CHARACTERISTICS Te =25c UNLESS OTHER- WISE SPECIFIED SCREENING SCHEMATIC (D) [TERMINAL CONNECTIONS G H - 1 {GATE __|1| DRAIN # 2] DRAIN 2 | SOURCE (Ss) [3[source [3] GATE PARAMETER SYMBOL} TEST CONDITIONS MINJTYP | MAX JUNI TSI Drain-source VGS=OV Breakdown volt ,|Y(aR)0ss ID=250 WA 600; - ~ V Gare ihreshold |ygs(TH)|VDS*VGS ID=250 A 12.0} - |4.5] V Gate Source = _ _ Leakage IGSS |VGS=*+20 V 100] nA Zero Gate VDS=MAX.RATING VGS=0] - - {250| WA Voltage Drain | 1DSS = Current vosco ANzidste | ~ | ~ ftooo] ma Static Drain- VGS=10 V Source On-State|/RDS(ON -~ | - 10.4] 0 Resistance(1) (ON) 10=8.5A Forward Trans- VOS 2 SO V Conductance (2) gf's 10S=8.5A 3.0} - - |{s(0) Input Capacitance] CISS - |4500; - pF Output Capacitance! COSS VGS=OV_ VDS=25 V - |S50O| - pF Reverse Transfer f=1.0 MHz -~ Jiso| - F Capacitance CRSS p Turn-On Delay [td(on)]vop=300V Zo=50n = | - [100] ns Rise Time tr (woaes itching ti - | - 1110] ns Turn-Off Delayltd(off)| are essentially indepen- - - |220] ns Fall Time vi dent of operating temp.) [_ |105| ns Tota! Gate Charge (Gate-Source Plus! Qg - 1165|/ - ac Gate-Drain) VGS=10V, ID=17A Gate-Source VDS=0.8 MAX.RATING Charge Qgs (Gate charge is essenti- ~ 65] - nc = - aily independent o e Comitiers) Qgd operating temperature) ~ |ioo|] - nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT .Tc = 25C ( UNLESS OTHER- ) WISE SPECIFIED PARAMETER SYMBOL. TEST CONDITIONS MIN | TYP .|MAX. UNITS Continuous te: Source Current! (S Modified MOSFET -|/- 17] A symbol showing the (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM Ifier (See schematic)}] - | - | 68] A Diode) (1) Diode Forward (F217A VGS=*0V _ - Voltage (2) VSO |Te=*25C 1.5] V Reverse 249G8 _ Recovery Time | fre |Tess25* C 500} - | ns Reverse Re- IF=17A covery Charge Qrr jdi/dt=100A/ ES - |8.0} - | pc STANDARD BEND CONF IGURAT IONS GAF (CUSTOM BEND OPTIONS AVAILABLE) ta} TJ = 25C to 150C. 3 A3 Pulse test: Pulse Width <3008S, Duty Cycie <2%. Repetitive Rating: Pulse Width limited By Max.junction Temperature.