M29W800DT70N6E - STMICROELECTRONICS

April 2009 Rev 11 1/52

M29W800DT

M29W800DB

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)

3 V supply flash memory

Features

Supply voltage

–V

CC = 2.7 V to 3.6 V for program, erase

and read

Access times: 45, 70, 90 ns

Programming time

–10μs per byte/word typical

19 memory blocks

– 1 boot block (top or bottom location)

– 2 parameter and 16 main blocks

Program/erase controller

– Embedded byte/word program algorithms

Erase suspend and resume modes

– Read and program another block during

erase suspend

Unlock bypass program command

– Faster production/batch programming

Temporary block unprotection mode

Common flash interface

– 64-bit security code

Low power consumption

– Standby and automatic standby

100,000 program/erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Top device code M29W800DT: 22D7h

– Bottom device code M29W800DB: 225Bh

FBGA

TFBGA48 (ZE)

6 x 8 mm

TSOP48 (N)

12 x 20 mm

SO44 (M)

www.numonyx.com

Contents M29W800DT, M29W800DB
2/52   
Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
1 Address inputs (A0-A18)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
2 Data inputs/outputs (DQ0-DQ7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
3 Data inputs/outputs (DQ8-DQ14)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
4 Data input/output or address input (DQ15A-1) . . . . . . . . . . . . . . . . . . . . .  12
5 Chip enable (E)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
6 Output enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  12
7 Write enable (W)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
8 Reset/block temporary unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
9 Ready/busy output (RB)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
10 Byte/word organization select (BYTE)  . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
11 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
12 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
Bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1 Bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
2 Bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3 Output disable   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
4 Standby   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
5 Automatic standby  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
6 Special bus operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
6.1 Electronic signature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.2 Block protection and blocks unprotection   . . . . . . . . . . . . . . . . . . . . . . . 16
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
1 Read/Reset command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
2 Auto Select command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
3 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
4 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
5 Unlock Bypass Program command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18

M29W800DT, M29W800DB Contents
 3/52
6 Unlock Bypass Reset command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
7 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
8 Block Erase command  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
9 Erase Suspend command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
10 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
11 Read CFI Query command   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  20
12 Block Protect and Chip Unprotect commands  . . . . . . . . . . . . . . . . . . . . .  20
Status register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
1 Data polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  23
2 Toggle bit (DQ6)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  23
3 Error bit (DQ5)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
4 Erase timer bit (DQ3)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
5 Alternative toggle bit (DQ2)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DC and AC parameters  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Ordering information   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Appendix A Block address t able. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix B Com mon f lash interface (CFI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Appendix C Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
C.1 Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  45
C.2 In-system technique  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  45
Revision history   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

List of tables M29W800DT, M29W800DB
4/52   
List of tables
Table 1. Signal names  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Bus operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 3. Bus operations, BYTE = VIH  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 5. Commands, 8-bit mode, BYTE = VIL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 6. Program/erase times and program/erase endurance cycles  . . . . . . . . . . . . . . . . . . . . . . . 22
Table 7. Status register bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 8. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 9. Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 10. Device capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 11. DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 12. Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 13. Write AC characteristics, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 14. Write AC characteristics, chip enable controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 15. Reset/block temporary unprotect AC characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 16. SO44 – 44 lead plastic small outline, 525 mils body width, package mechanical data  . . . 35
Table 17. TSOP48 – 48 lead plastic thin small outline, 12 x 20 mm, package mechanical data . . . . 36
Table 18. TFBGA48 6 x 8 mm – 6 x 8 active ball array – 0.80 mm pitch, package mechanical data. 37
Table 19. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 20. Top boot block addresses, M29W800DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 21. Bottom boot block addresses, M29W800DB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 22. Query structure overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 23. CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 24. CFI query system interface information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 25. Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 26. Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 27. Security code area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 28. Programmer technique bus operations, BYTE = VIH or VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46
Table 29. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

M29W800DT, M29W800DB List of figures
 5/52
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. SO connections  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 4. TFBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Block addresses (x 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Block addresses (x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Data polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 8. Data toggle flowchart  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 10. AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 11. Read mode AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 12. Write AC waveforms, write enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 13. Write AC waveforms, chip enable controlled  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 14. Reset/block temporary unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 15. SO44 – 44 lead plastic small outline, 525 mils body width, package outline . . . . . . . . . . . 34
Figure 16. TSOP48 – 48 lead plastic thin small outline, 12 x 20 mm, package outline . . . . . . . . . . . . 36
Figure 17. TFBGA48 6 x 8 mm – 6 x 8 ball array – 0.80 mm pitch, bottom view package outline. . . . 37
Figure 18. Programmer equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 19. Programmer equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 20. In-system equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 21. In-system equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this

document, including without limitation specifications and product descriptions. This document

supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any

information set forth in this document if you obtain the product described herein from any unauthorized

distributor or other source not authorized by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications

unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor

and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron

harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of,

directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting

directly or indirectly from any use of nonautomotive-grade products in automotive applications.

Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and

any customer of distributor/customer (1) state that Micron products are not designed or intended for use

in automotive applications unless specifically designated by Micron as automotive-grade by their

respective data sheets and (2) require such customer of distributor/customer to indemnify and hold

Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees

arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property

damage resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron

component could result, directly or indirectly in death, personal injury, or severe property or

environmental damage ("Critical Applications"). Customer must protect against death, personal injury,

and severe property and environmental damage by incorporating safety design measures into

customer's applications to ensure that failure of the Micron component will not result in such harms.

Should customer or distributor purchase, use, or sell any Micron component for any critical application,

customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors,

and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and

expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability,

personal injury, or death arising in any way out of such critical application, whether or not Micron or its

subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the

Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of

their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS

HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE

RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR

THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate

design, manufacturing, and operating safeguards are included in customer's applications and products to

eliminate the risk that personal injury, death, or severe property or environmental damages will result

from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or

consequential damages (including without limitation lost profits, lost savings, business interruption, costs

related to the removal or replacement of any products or rework charges) whether or not such damages

are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written

agreement executed by Micron's duly authorized representative.

Description M29W800DT, M29W800DB

6/52

1 Description

The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be

read, erased and reprogrammed. These operations can be performed using a single low

voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it

can be read in the same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to

preserve valid data while old data is erased. Each block can be protected independently to

prevent accidental program or erase commands from modifying the memory. Program and

erase commands are written to the command interface of the memory. An on-chip

program/erase controller simplifies the process of programming or erasing the memory by

taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions

identified. The command set required to control the memory is consistent with JEDEC

standards.

The blocks in the memory are asymmetrically arranged, see Figur e 5: Block addre sses ( x 8)

and Figure 6: Block addresses (x 16). The first or last 64 Kbytes have been divided into four

additional blocks. The 16-Kbyte boot block can be used for small initialization code to start

the microprocessor, the two 8-Kbyte parameter blocks can be used for parameter storage

and the remaining 32-Kbyte is a small main block where the application may be stored.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The memory is offered in SO44, TSOP48 (12 x 20 mm) and TFBGA48 6 x 8 mm (0.8 mm

pitch) packages. The memory is supplied with all the bits erased (set to ’1’).

Figure 1. Logic diagram

AI05470B

A0-A18

DQ0-DQ14

VCC

M29W800DT

M29W800DB

VSS

DQ15A–1

BYTE

M29W800DT, M29W800DB Description

7/52

Figure 2. SO conne ct ion s

Table 1. Sign al n am es

Signal Description Direction

A0-A18 Address inputs Inputs

DQ0-DQ7 Data inputs/outputs I/O

DQ8-DQ14 Data inputs/outputs I/O

DQ15A–1 Data input/output or address input I/O

EChip enable Input

GOutput enable Input

WWrite enable Input

RP Reset/block temporary unprotect Input

RB Ready/busy output (not available on SO44 package) Output

BYTE Byte/word organization select Input

VCC Supply voltage –

VSS Ground –

NC Not connected internally –

DQ0

DQ8

VSS

A13

VSS

A14

A15

DQ7

A12

A16

BYTE

DQ15A–1

DQ5DQ2

DQ3 VCC

DQ11 DQ4

DQ14

AI05462b

M29W800DT

M29W800DB

2322

17DQ1

DQ9

DQ6

DQ13

A11

A10

DQ10 21 DQ12

A17 A8

A18

Description M29W800DT, M29W800DB

8/52

Figure 3. TSOP co nnections

DQ3

DQ9

DQ2

A6 DQ0

DQ6

A9 DQ13

A17

A10 DQ14

DQ12

DQ10

DQ15A–1

VCC

DQ4

DQ5

DQ7

AI05461

M29W800DT

M29W800DB

24 25

DQ8

A18

DQ1

DQ11

A12

A13

A16

A11

BYTE

A15

A14 VSS

VSS

M29W800DT, M29W800DB Description

9/52

Figure 4. TFBGA connections (top view through package)

AI00656

4321

DQ15

A–1

DQ10DQ8E

DQ13DQ11

DQ9

VSS

DQ6DQ1VSS

DQ14

A12

NCA17

A14A10NCA18A6A2

RP A8

DQ4

DQ3

VCC

DQ12

BYTE

A15A11NCA1

A16DQ7DQ5DQ2A0

DQ0

RB W A13

Description M29W800DT, M29W800DB

10/52

Fig u re 5. Block addres ses (x 8 )

1. Also see Appendix A: Block address table, Table 20 and Table 21 for a full listing of the block addresses.

AI05463

16 Kbyte

FFFFFh

FC000h

64 Kbyte

1FFFFh

10000h

64 Kbyte

0FFFFh

00000h

M29W800DT

Top boot block addresses (x 8)

32 Kbyte

F7FFFh

F0000h

64 Kbyte

E0000h

EFFFFh

Total of 15

64 Kbyte blocks

16 Kbyte

FFFFFh

F0000h 64 Kbyte

64 Kbyte

03FFFh

00000h

M29W800DB

bottom boot block addresses (x 8)

32 Kbyte

EFFFFh

1FFFFh 64 Kbyte

E0000h

10000h

Total of 15

64 Kbyte blocks

0FFFFh

08000h

8 Kbyte

FBFFFh

FA000h

F9FFFh

F8000h

8 Kbyte

07FFFh

06000h

05FFFh

04000h

M29W800DT, M29W800DB Description

11/52

Fig u re 6. Block ad d r esses (x 16)

1. Also see Appendix A: Block address table, Table 20 and Table 21 for a full listing of the block addresses.

AI05464

8 Kword

7FFFFh

7E000h

32 Kword

0FFFFh

08000h

32 Kword

07FFFh

00000h

M29W800DT

Top boot block addresses (x 16)

16 Kword

7BFFFh

78000h

32 Kword

70000h

77FFFh

Total of 15

32 Kword blocks

8 Kword

7FFFFh

78000h 32 Kword

32 Kword

01FFFh

00000h

M29W800DB

Bottom boot block addresses (x 16)

16 Kword

77FFFh

0FFFFh 32 Kword

70000h

08000h

Total of 15

32 Kword blocks

07FFFh

04000h

4 Kword

7DFFFh

7D000h

7CFFFh

7C000h

4 Kword

03FFFh

03000h

02FFFh

02000h

Signal descriptions M29W800DT, M29W800DB

12/52

2 Signal descriptions

See Figure 1: Lo gi c diagr am and Table 1: Si gnal names for a brief overview of the signals

connected to this device.

2.1 Address inputs (A0-A18)

The address inputs select the cells in the memory array to access during bus read

operations. During bus write operations they control the commands sent to the command

interface of the internal state machine.

2.2 Data inputs/outputs (DQ0-DQ7)

The data inputs/outputs output the data stored at the selected address during a bus read

operation. During bus write operations they represent the commands sent to the command

interface of the internal state machine.

2.3 Data inputs/outputs (DQ8-DQ14)

The data inputs/outputs output the data stored at the selected address during a bus read

operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are

high impedance. During bus write operations the command register does not use these bits.

When reading the status register these bits should be ignored.

2.4 Data input/output or address input (DQ15A-1)

When BYTE is High, VIH, this pin behaves as a data input/output pin (as DQ8-DQ14). When

BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the LSB of

the word on the other addresses, DQ15A–1 High will select the MSB. Throughout the text

consider references to the data input/output to include this pin when BYTE is High and

references to the address inputs to include this pin when BYTE is Low except when stated

explicitly otherwise.

2.5 Chip enable (E)

The chip enable, E, activates the memory, allowing bus read and bus write operations to be

performed. When Chip Enable is High, VIH, all other pins are ignored.

2.6 Outpu t ena ble (G )

The output enable, G, controls the bus read operation of the memory.

M29W800DT, M29W800DB Signal descriptions

13/52

2.7 Wr ite enable (W)

The write enable, W, controls the bus write operation of the memory’s command interface.

2.8 Reset/block temporary unprotect (RP)

The reset/block temporary unprotect pin can be used to apply a hardware reset to the

memory or to temporarily unprotect all blocks that have been protected.

A hardware reset is achieved by holding reset/block temporary unprotect Low, VIL, for at

least tPLPX. After reset/block temporary unprotect goes High, VIH, the memory will be ready

for bus read and bus write operations after tPHEL or tRHEL, whichever occurs last. See the

Section 2.9: Ready/busy output (RB), Ta ble 15: Reset/ bl ock temporary unprotect AC

characteristics and Figure 14: Reset/block temporary unprotect AC waveforms, for more

details.

Holding RP at VID will temporarily unprotect the protected blocks in the memory. Program

and erase operations on all blocks will be possible. The transition from VIH to VID must be

slower than tPHPHH.

2.9 Ready/busy output (RB)

The ready/busy pin is an open-drain output that can be used to identify when the device is

performing a program or erase operation. During program or erase operations ready/busy is

Low, VOL. Ready/busy is high-impedance during read mode, auto select mode and erase

suspend mode.

After a hardware reset, bus read and bus write operations cannot begin until ready/busy

becomes high-impedance. See Tabl e 15: Reset/block tempora ry unprotect AC

characteristics and Figure 14: Reset/block temporary unprotect AC waveforms.

The use of an open-drain output allows the ready/busy pins from several memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

2.10 Byte/word organization select (BYTE)

The byte/word organization select pin is used to switch between the 8-bit and 16-bit bus

modes of the memory. When byte/word organization select is Low, VIL, the memory is in 8-

bit mode, when it is High, VIH, the memory is in 16-bit mode.

2.11 VCC supply voltage

The VCC supply voltage supplies the power for all operations (read, program, erase etc.).

The command interface is disabled when the VCC supply voltage is less than the lockout

voltage, VLKO. This prevents bus write operations from accidentally damaging the data

during power-up, power-down and power surges. If the program/erase controller is

programming or erasing during this time then the operation aborts and the memory contents

being altered will be invalid.

Signal descriptions M29W800DT, M29W800DB

14/52

A 0.1 μF capacitor should be connected between the VCC supply voltage pin and the VSS

ground pin to decouple the current surges from the power supply. The PCB track widths

must be sufficient to carry the currents required during program and erase operations, ICC3.

2.12 VSS ground

The VSS ground is the reference for all voltage measurements.

M29W800DT, M29W800DB Bus operations

15/52

3 Bus operations

There are five standard bus operations that control the device. These are bus read, bus

write, output disable, standby and automatic standby. See Table 2 and Table 3, Bus

operations, for a summary. Typically glitches of less than 5 ns on Chip Enable or Write

Enable are ignored by the memory and do not affect bus operations.

3.1 Bus read

Bus read operations read from the memory cells, or specific registers in the command

interface. A valid bus read operation involves setting the desired address on the address

inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write

Enable High, VIH. The data inputs/outputs will output the value, see Figure 11: Read mode

AC wavefor ms , and Figure 12: Read AC characteristics for details of when the output

becomes valid.

3.2 Bus write

Bus write operations write to the command interface. A valid bus write operation begins by

setting the desired address on the address inputs. The address inputs are latched by the

command interface on the falling edge of Chip Enable or Write Enable, whichever occurs

last. The data inputs/outputs are latched by the command interface on the rising edge of

Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,

during the whole bus write operation. See Figure 12 and Figure 13, Write AC waveforms,

and Table 13 and Table 14, Write AC characteristics, for details of the timing requirements.

3.3 Output disable

The data inputs/outputs are in the high impedance state when Output Enable is High, VIH.

3.4 Standby

When Chip Enable is High, VIH, the memory enters standby mode and the data

inputs/outputs pins are placed in the high-impedance state. To reduce the supply current to

the standby supply current, ICC2, Chip Enable should be held within VCC ± 0.2 V. For the

standby current level see Tabl e 11 : DC char acteri s tics.

During program or erase operations the memory will continue to use the program/erase

supply current, ICC3, for program or erase operations until the operation completes.

3.5 Automatic standby

If CMOS levels (VCC ± 0.2 V) are used to drive the bus and the bus is inactive for 150 ns or

more the memory enters automatic standby where the internal supply current is reduced to

the standby supply current, ICC2. The data inputs/outputs will still output data if a bus read

operation is in progress.

Bus o p eration s M29W 800DT , M29W 800DB

16/52

3.6 Special bus operations

Additional bus operations can be performed to read the electronic signature and also to

apply and remove block protection. These bus operations are intended for use by

programming equipment and are not usually used in applications. They require VID to be

applied to some pins.

3.6.1 Electronic signature

The memory has two codes, the manufacturer code and the device code, that can be read

to identify the memory. These codes can be read by applying the signals listed in Table 2

and Table 3, Bus operations.

3.6.2 Block protection and blocks unprotection

Each block can be separately protected against accidental program or erase. Protected

blocks can be unprotected to allow data to be changed.

There are two methods available for protecting and unprotecting the blocks, one for use on

programming equipment and the other for in-system use. Block protect and chip unprotect

operations are described in Appendix C: Block protection.

Ta ble 2. Bus operations, BYTE = VIL(1)

Operation E G W Address inputs

DQ15A–1, A0-A1 8

Dat a inputs/outputs

DQ14-DQ8 DQ7-DQ0

Bus read VIL VIL VIH Cell address Hi-Z Data output

Bus write VIL VIH VIL Command address Hi-Z Data input

Output disable X VIH VIH X Hi-Z Hi-Z

Standby VIH X X X Hi-Z Hi-Z

Read manufacturer code VIL VIL VIH

A0 = VIL, A1 = VIL, A9 =

VID, others VIL or VIH

Hi-Z 20h

Read device code VIL VIL VIH

A0 = VIH, A1 = VIL, A9 =

VID, others VIL or VIH

Hi-Z D7h (M29W800DT)

5Bh (M29W800DB)

1. X = VIL or VIH.

Table 3. Bus operations, BYTE = VIH (1)

Operation E G W Address inputs

A0-A18 Data inputs/output s

DQ15A–1, DQ14-DQ0

Bus read VIL VIL VIH Cell address Data output

Bus write VIL VIH VIL Command address Data input

Output disable X VIH VIH X Hi-Z

Standby VIH X X X Hi-Z

Read manufacturer code VIL VIL VIH

A0 = VIL, A1 = VIL, A9 = VID,

others VIL or VIH

0020h

Read device code VIL VIL VIH

A0 = VIH, A1 = VIL, A9 = VID,

others VIL or VIH

22D7h (M29W800DT)

225Bh (M29W800DB)

1. X = VIL or VIH.

M29W800DT, M29W800DB Command interface

17/52

4 Command interface

All bus write operations to the memory are interpreted by the command interface.

Commands consist of one or more sequential bus write operations. Failure to observe a

valid sequence of bus write operations will result in the memory returning to read mode. The

long command sequences are imposed to maximize data security.

The address used for the commands changes depending on whether the memory is in 16-

bit or 8-bit mode. See either Table 4, or Table 5, depending on the configuration that is being

used, for a summary of the commands.

4.1 Read/Reset command

The Read/Reset command returns the memory to its read mode where it behaves like a

ROM or EPROM, unless otherwise stated. It also resets the errors in the status register.

Either one or three bus write operations can be used to issue the Read/Reset command.

The Read/Reset command can be issued, between bus write cycles before the start of a

program or erase operation, to return the device to read mode. Once the program or erase

operation has started the Read/Reset command is no longer accepted. The Read/Reset

command will not abort an erase operation when issued while in erase suspend.

4.2 Auto Select command

The Auto Select command is used to read the manufacturer code, the device code and the

block protection status. Three consecutive bus write operations are required to issue the

Auto Select command. Once the Auto Select command is issued the memory remains in

auto select mode until a Read/Reset command is issued. Read CFI Query and Read/Reset

commands are accepted in auto select mode, all other commands are ignored.

From the auto select mode the manufacturer code can be read using a bus read operation

with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH. The

manufacturer code for Numonyx is 0020h.

The device code can be read using a bus read operation with A0 = VIH and A1 = VIL. The

other address bits may be set to either VIL or VIH. The device code for the M29W800DT is

22D7h and for the M29W800DB is 225Bh.

The block protection status of each block can be read using a bus read operation with A0 =

VIL, A1 = VIH, and A12-A18 specifying the address of the block. The other address bits may

be set to either VIL or VIH. If the addressed block is protected then 01h is output on data

inputs/outputs DQ0-DQ7, otherwise 00h is output.

4.3 Program command

The Program command can be used to program a value to one address in the memory

array at a time. The command requires four bus write operations, the final write operation

latches the address and data in the internal state machine and starts the program/erase

controller.

Command interface M29W800DT, M29W800DB

18/52

If the address falls in a protected block then the Program command is ignored, the data

remains unchanged. The status register is never read and no error condition is given.

During the program operation the memory will ignore all commands. It is not possible to

issue any command to abort or pause the operation. Typical program times are given in

Table 6: Prog ram/e rase tim es and progra m /erase endurance cycles. Bus read operations

during the program operation will output the status register on the data inputs/outputs. See

the Section 5: Status register for more details.

After the program operation has completed the memory will return to the read mode, unless

an error has occurred. When an error occurs the memory will continue to output the status

read mode.

Note that the Program command cannot change a bit set to ’0’ back to ’1’. One of the erase

commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.

4.4 Unlock Bypass command

The Unlock Bypass command is used in conjunction with the Unlock Bypass Program

command to program the memory. When the access time to the device is long (as with

some EPROM programmers) considerable time saving can be made by using these

commands. Three bus write operations are required to issue the Unlock Bypass command.

Once the Unlock Bypass command has been issued the memory will only accept the Unlock

Bypass Program command and the Unlock Bypass Reset command. The memory can be

read as if in read mode.

4.5 Unlock Bypass Program command

The Unlock Bypass Program command can be used to program one address in memory at

a time. The command requires two bus write operations, the final write operation latches the

address and data in the internal state machine and starts the program/erase controller.

The program operation using the Unlock Bypass Program command behaves identically to

the program operation using the Program command. A protected block cannot be

programmed; the operation cannot be aborted and the status register is read. Errors must

be reset using the Read/Reset command, which leaves the device in unlock bypass mode.

See the Program command for details on the behavior.

4.6 Unlock B ypass Reset command

The Unlock Bypass Reset command can be used to return to read/reset mode from unlock

bypass mode. Two bus write operations are required to issue the Unlock Bypass Reset

command. Read/Reset command does not exit from unlock bypass mode.

M29W800DT, M29W800DB Command interface

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4.7 Chip Erase command

The Chip Erase command can be used to erase the entire chip. Six bus write operations are

required to issue the Chip Erase command and start the program/erase controller.

If any blocks are protected then these are ignored and all the other blocks are erased. If all

of the blocks are protected the chip erase operation appears to start but will terminate within

about 100 μs, leaving the data unchanged. No error condition is given when protected

blocks are ignored.

During the erase operation the memory will ignore all commands. It is not possible to issue

any command to abort the operation. Typical chip erase times are given in Table 6:

Pr ogram/ erase times and prog ram/e rase endura nce cyc l es. All bus read operations during

the chip erase operation will output the status register on the data inputs/outputs. See the

Se ct i on 5 : Status regi ster for more details.

After the chip erase operation has completed the memory will return to the read mode,

unless an error has occurred. When an error occurs the memory will continue to output the

status register. A Read/Reset command must be issued to reset the error condition and

return to read mode.

The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All

previous data is lost.

4.8 Block Erase command

The Block Erase command can be used to erase a list of one or more blocks. Six bus write

operations are required to select the first block in the list. Each additional block in the list can

be selected by repeating the sixth bus write operation using the address of the additional

block. The block erase operation starts the program/erase controller about 50 μs after the

last bus write operation. Once the program/erase controller starts it is not possible to select

any more blocks. Each additional block must therefore be selected within 50 μs of the last

block. The 50 μs timer restarts when an additional block is selected. The status register can

be read after the sixth bus write operation. See the status register for details on how to

identify if the program/erase controller has started the block erase operation.

If any selected blocks are protected then these are ignored and all the other selected blocks

are erased. If all of the selected blocks are protected the block erase operation appears to

start but will terminate within about 100 μs, leaving the data unchanged. No error condition

is given when protected blocks are ignored.

During the block erase operation the memory will ignore all commands except the Erase

Suspend command. Typical block erase times are given in Ta bl e 6 : Progr am / erase tim es

and prog ram/e rase endurance cyc l es. All bus read operations during the block erase

operation will output the status register on the data inputs/outputs. See the Section 5: Status

After the block erase operation has completed the memory will return to the read mode,

unless an error has occurred. When an error occurs the memory will continue to output the

status register. A Read/Reset command must be issued to reset the error condition and

return to read mode.

The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All

previous data in the selected blocks is lost.

Command interface M29W800DT, M29W800DB

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4.9 Erase Suspend command

The Erase Suspend command may be used to temporarily suspend a block erase operation

and return the memory to read mode. The command requires one bus write operation.

The program/erase controller will suspend within the erase suspend latency time (refer to

Table 6 for value) of the Erase Suspend command being issued. Once the program/erase

controller has stopped the memory will be set to read mode and the erase will be

suspended. If the Erase Suspend command is issued during the period when the memory is

waiting for an additional block (before the program/erase controller starts) then the erase is

suspended immediately and will start immediately when the Erase Resume command is

issued. It is not possible to select any further blocks to erase after the erase resume.

During erase suspend it is possible to read and program cells in blocks that are not being

erased; both read and program operations behave as normal on these blocks. If any attempt

is made to program in a protected block or in the suspended block then the Program

command is ignored and the data remains unchanged. The status register is not read and

no error condition is given. Reading from blocks that are being erased will output the status

It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands

during an erase suspend. The Read/Reset command must be issued to return the device to

read array mode before the Resume command will be accepted.

4.10 Erase Resume command

The Erase Resume command must be used to restart the program/erase controller from

erase suspend. An erase can be suspended and resumed more than once.

4.11 R ead CFI Qu ery comman d

The Read CFI Query command is used to read data from the common flash interface (CFI)

memory area. This command is valid when the device is in the read array mode, or when

the device is in auto select mode.

One bus write cycle is required to issue the Read CFI Query command. Once the command

is issued subsequent bus read operations read from the common flash interface memory

area.

The Read/Reset command must be issued to return the device to the previous mode (read

array mode or auto select mode). A second Read/Reset command would be needed if the

device is to be put in the read array mode from auto select mode.

See Ap pendix B: Comm on fla sh interf ace (CF I ), Table 22, Table 23, Table 24, Table 25,

Table 26 and Table 27 for details on the information contained in the common flash interface

(CFI) memory area.

4.12 Block Protect and Ch ip Unpro tect comm ands

Each block can be separately protected against accidental program or erase. The whole

chip can be unprotected to allow the data inside the blocks to be changed.

Block protect and chip unprotect operations are described in Appendix C: Block protection.

M29W800DT, M29W800DB Command interface

21/52

Ta ble 4. C om m ands , 16-bit mode , BYTE = VIH(1)

Command

Length

Bus write operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset 1X F0

3555 AA 2AA 55 X F0

Auto Select 3 555 AA 2AA 55 555 90

Program 4 555 AA 2AA 55 555 A0 PA PD

Unlock Bypass 3 555 AA 2AA 55 555 20

Unlock Bypass Program 2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Erase Suspend 1 X B0

Erase Resume 1 X 30

Read CFI Query 1 55 98

1. X don’t care, PA program address, PD program data, BA any address in the block.

All values in the table are in hexadecimal format.

The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15

are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Command interface M29W800DT, M29W800DB

22/52

Ta ble 5. C om m ands , 8-bit mode, BYTE = VIL(1)

Command

Length

Bus write operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset 1X F0

3 AAA AA 555 55 X F0

Auto Select 3 AAA AA 555 55 AAA 90

Program 4 AAA AA 555 55 AAA A0 PA PD

Unlock Bypass 3 AAA AA 555 55 AAA 20

Unlock Bypass

Program 2X A0PAPD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

Block Erase 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

Erase Suspend 1 X B0

Erase Resume 1 X 30

Read CFI Query 1 AA 98

1. X don’t care, PA program address, PD program data, BA any address in the block.

All values in the table are in hexadecimal.

The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15

are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6. Program/era se times and pro gr am/ eras e end urance cycles

Parameter Min. Typ. (1)(2) Max.(2) Unit

Chip erase 12 25(3) s

Block erase (64 Kbytes) 0.8 1.6(4) s

Erase suspend latency time 15 25(3) μs

Program (byte or word) 10 200(3) μs

Chip program (byte by byte) 12 60(3) s

Chip program (word by word) 6 30(4) s

Program/erase cycles (per block) 100,000 cycles

Data retention 20 years

1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

M29W800DT, M29W800DB Status register

23/52

5 Status register

Bus read operations from any address always read the status register during program and

erase operations. It is also read during erase suspend when an address within a block being

erased is accessed.

The bits in the status register are summarized in Table 7: Status register bits.

5.1 Data polling bit (DQ7)

The data polling bit can be used to identify whether the program/erase controller has

successfully completed its operation or if it has responded to an erase suspend. The data

polling bit is output on DQ7 when the status register is read.

During program operations the data polling bit outputs the complement of the bit being

programmed to DQ7. After successful completion of the program operation the memory

returns to read mode and bus read operations from the address just programmed output

DQ7, not its complement.

During erase operations the data polling bit outputs ’0’, the complement of the erased state

of DQ7. After successful completion of the erase operation the memory returns to read

mode.

In erase suspend mode the data polling bit will output a ’1’ during a bus read operation

within a block being erased. The data polling bit will change from a ’0’ to a ’1’ when the

program/erase controller has suspended the erase operation.

Figure 7: Data polling flowchart gives an example of how to use the data polling bit. A valid

address is the address being programmed or an address within the block being erased.

5.2 Toggle bit (DQ6 )

The toggle bit can be used to identify whether the program/erase controller has successfully

completed its operation or if it has responded to an erase suspend. The toggle bit is output

on DQ6 when the status register is read.

During program and erase operations the toggle bit changes from ’0’ to ’1’ to ’0’, etc., with

successive bus read operations at any address. After successful completion of the

operation the memory returns to read mode.

During erase suspend mode the toggle bit will output when addressing a cell within a block

being erased. The toggle bit will stop toggling when the program/erase controller has

suspended the erase operation.

If any attempt is made to erase a protected block, the operation is aborted, no error is

signalled and DQ6 toggles for approximately 100 μs. If any attempt is made to program a

protected block or a suspended block, the operation is aborted, no error is signalled and

DQ6 toggles for approximately 1 μs.

Figure 8: Data toggle flowchart gives an example of how to use the toggle bit.

Stat u s register M29W 800DT , M2 9W800 DB

24/52

5.3 Error bit (DQ5)

The error bit can be used to identify errors detected by the program/erase controller. The

error bit is set to ’1’ when a program, block erase or chip erase operation fails to write the

correct data to the memory. If the error bit is set a Read/Reset command must be issued

before other commands are issued. The error bit is output on DQ5 when the status register

is read.

Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to

do so will set DQ5 to ‘1’. A bus read operation to that address will show the bit is still ‘0’. One

of the erase commands must be used to set all the bits in a block or in the whole memory

from ’0’ to ’1’

5.4 Erase timer bit (DQ3)

The erase timer bit can be used to identify the start of program/erase controller operation

during a Block Erase command. Once the program/erase controller starts erasing the erase

timer bit is set to ’1’. Before the program/erase controller starts the erase timer bit is set to ’0’

and additional blocks to be erased may be written to the command interface. The erase

timer bit is output on DQ3 when the status register is read.

5.5 Alternative toggle bit (DQ2)

The alternative toggle bit can be used to monitor the program/erase controller during erase

operations. The alternative toggle bit is output on DQ2 when the status register is read.

During chip erase and block erase operations the toggle bit changes from ’0’ to ’1’ to ’0’,

etc., with successive bus read operations from addresses within the blocks being erased. A

protected block is treated the same as a block not being erased. Once the operation

completes the memory returns to read mode.

During erase suspend the alternative toggle bit changes from ’0’ to ’1’ to ’0’, etc. with

successive bus read operations from addresses within the blocks being erased. Bus read

operations to addresses within blocks not being erased will output the memory cell data as if

in read mode.

After an erase operation that causes the error bit to be set the alternative toggle bit can be

used to identify which block or blocks have caused the error. The alternative toggle bit

changes from ’0’ to ’1’ to ’0’, etc. with successive bus read operations from addresses within

blocks that have not erased correctly. The alternative toggle bit does not change if the

addressed block has erased correctly.

M29W800DT, M29W800DB Status register

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Figure 7. D ata polling flowchart

Table 7. St atus register bits (1)

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB

Program Any address DQ7 To g g le 0 – – 0

Program during erase

suspend Any address DQ7 To g g le 0 – – 0

Program error Any address DQ7 To g g l e 1 – – 0

Chip erase Any address 0 Toggle 0 1 Toggle 0

Block erase before

timeout

Erasing block 0 Toggle 0 0 Toggle 0

Non-erasing block 0 Toggle 0 0 No toggle 0

Block erase

Erasing block 0 Toggle 0 1 Toggle 0

Non-erasing block 0 Toggle 0 1 No toggle 0

Erase suspend

Erasing block 1 No toggle 0 – Toggle 1

Non-erasing block Data read as normal 1

Erase error

Good block address 0 Toggle 1 1 No toggle 0

Faulty block address 0 Toggle 1 1 Toggle 0

1. Unspecified data bits should be ignored.

READ DQ5 & DQ7

at VALID ADDRESS

START

READ DQ7

at VALID ADDRESS

FAIL PASS

AI03598

DQ7

DATA YES

YES

DQ5

= 1

DQ7

DATA YES

Stat u s register M29W 800DT , M2 9W800 DB

26/52

Figure 8. D ata toggle flowchar t

READ DQ6

START

READ DQ6

TWICE

FAIL PASS

AI01370C

DQ6

TOGGLE NO

YES

DQ5

= 1

YES

DQ6

TOGGLE

READ

DQ5 & DQ6

M29W800DT, M29W800DB Maximum rating

27/52

6 Maximum rating

Stressing the device above the rating listed in the Table 8: Absolute maximum ratings may

cause permanent damage to the device. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability. These are stress ratings only and

operation of the device at these or any other conditions above those indicated in the

operating sections of this specification is not implied. Refer also to the Numonyx SURE

program and other relevant quality documents.

Table 8. Abso l u te maximum rating s

Symbol Parameter Min Max Unit

TBIAS Temperature under bias –50 125 °C

TSTG Storage temperature –65 150 °C

VIO Input or output voltage (1) (2)

1. Minimum voltage may undershoot to –2 V during transition and for less than 20 ns during transitions.

2. Maximum voltage may overshoot to VCC + 2 V during transition and for less than 20 ns during transitions.

–0.6 VCC + 0.6 V

VCC Supply voltage –0.6 4 V

VID Identification voltage –0.6 13.5 V

DC and AC para meters M29W 800DT , M29W 800DB

28/52

7 DC and AC parameters

This section summarizes the operating measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics tables that

follow, are derived from tests performed under the measurement conditions summarized in

Table 9: Operating and AC measurem ent conditi ons. Designers should check that the

operating conditions in their circuit match the operating conditions when relying on the

quoted parameters.

Fig ur e 9. AC measurement I/O waveform

Table 9. Operating and AC measurement conditions

Parameter

M29W800D

Unit45 ns 70 ns 90 ns

Min Max Min Max Min Max

VCC supply voltage 3.0 3.6 2.7 3.6 2.7 3.6 V

Ambient operating temperature (range 6) –40 85 –40 85 –40 85

°C

Ambient operating temperature (range 1) 0 70 0 70 0 70

Load capacitance (CL) 30 30 100 pF

Input rise and fall times 10 10 10 ns

Input pulse voltages 0 to VCC 0 to VCC 0 to VCC V

Input and output timing ref. voltages VCC/2 VCC/2 VCC/2 V

AI04498

VCC

0 V

VCC/2

M29W800DT, M29W800DB DC and AC parameters

29/52

Fig u re 10. AC me asuremen t load circuit

Table 10. Device capacitance(1)

1. Sampled only, not 100% tested.

Symbol Parameter Test condition Min Max Unit

CIN Input capacitance VIN = 0 V 6 pF

COUT Output capacitance VOUT = 0 V 12 pF

Table 11. DC characteristics

Symbol Parameter Test condition Min Max Unit

ILI Input leakage current 0 V ≤ VIN ≤ VCC ±1 μA

ILO Output leakage current 0 V ≤ VOUT ≤ VCC ±1 μA

ICC1 Supply current (read) E=V

IL, G =V

IH,

f=6MHz 10 mA

ICC2 Supply current (standby) E=V

CC ±0.2V,

RP =V

CC ±0.2V 100 μA

ICC3 (1)

1. Sampled only, not 100% tested.

Supply current (program/erase) Program/erase

controller active 20 mA

VIL Input low voltage –0.5 0.8 V

VIH Input high voltage 0.7VCC VCC +0.3 V

VOL Output low voltage IOL = 1.8 mA 0.45 V

VOH Output high voltage IOH = –100 μAV

CC –0.4 V

VID Identification voltage 11.5 12.5 V

IID Identification current A9 = VID 100 μA

VLKO

Program/erase lockout supply

voltage 1.8 2.3 V

AI0449

CL includes JIG capacitance

DEVICE

UNDER

TEST

25kΩ

VCC

25kΩ

VCC

0.1µF

DC and AC para meters M29W 800DT , M29W 800DB

30/52

Figure 11. Read mode AC wavefo rms

AI05448

tAVAV

tAVQV tAXQX

tELQX tEHQZ

tGLQV

tGLQX tGHQX

VALID

A0-A18/

A–1

DQ0-DQ7/

DQ8-DQ15

tELQV tEHQX

tGHQZ

VALID

tBHQV

tELBL/tELBH tBLQZ

BYTE

Table 12. Re ad AC ch aracter i s tics

Symbo l Alt Parameter Test condition M29W800D Unit

45 ns 70 ns 90 ns

tAVAV tRC Address Valid to Next Address Valid E = VIL,

G = VIL

Min 45 70 90 ns

tAVQ V tACC Address Valid to Output Valid E = VIL,

G = VIL

Max 45 70 90 ns

tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL Min 0 0 0 ns

tELQV tCE Chip Enable Low to Output Valid G = VIL Max 45 70 90 ns

tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL Min 0 0 0 ns

tGLQV tOE Output Enable Low to Output Valid E = VIL Max 25 30 35 ns

tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL Max 20 25 30 ns

tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL Max 20 25 30 ns

tEHQX

tGHQX

tAXQX

tOH

Chip Enable, Output Enable or Address

Transition to Output Transition Min 0 0 0 ns

tELBL

tELBH

tELFL

tELFH

Chip Enable to BYTE Low or High Max 5 5 5 ns

tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 25 30 ns

tBHQV tFHQV BYTE High to Output Valid Max 30 30 40 ns

1. Sampled only, not 100% tested.

M29W800DT, M29W800DB DC and AC parameters

31/52

Figu re 12. Wri te AC waveforms, write en able co ntrolled

AI05449

A0-A18/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHEL

tWHEH

tWHWL

tELWL

tAVWL

tWHGL

tWLAX

tWHDX

tAVAV

tDVWH

tWLWHtGHWL

tWHRL

Table 13. Write AC characteristics, write enable controlled

Symbol Alt Parameter M29W800D Unit

45 ns 70 ns 90 ns

tAVAV tWC Address Valid to Next Address Valid Min 45 70 90 ns

tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 0 ns

tWLWH tWP Write Enable Low to Write Enable High Min 30 45 50 ns

tDVWH tDS Input Valid to Write Enable High Min 25 45 50 ns

tWHDX tDH Write Enable High to Input Transition Min 0 0 0 ns

tWHEH tCH Write Enable High to Chip Enable High Min 0 0 0 ns

tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 30 ns

tAVWL tAS Address Valid to Write Enable Low Min 0 0 0 ns

tWLAX tAH Write Enable Low to Address Transition Min 40 45 50 ns

tGHWL Output Enable High to Write Enable Low Min 0 0 0 ns

tWHGL tOEH Write Enable High to Output Enable Low Min 0 0 0 ns

tWHRL (1) tBUSY Program/Erase Valid to RB Low Max 30 30 35 ns

tVCHEL tVCS VCC High to Chip Enable Low Min 50 50 50 μs

1. Sampled only, not 100% tested.

DC and AC para meters M29W 800DT , M29W 800DB

32/52

Figu re 13. Wri te AC waveforms, chip enabl e co ntrolled

AI05450

A0-A18/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHWL

tEHWH

tEHEL

tWLEL

tAVEL

tEHGL

tELAX

tEHDX

tAVAV

tDVEH

tELEHtGHEL

tEHRL

Table 14. W r ite AC char ac teri s tics, chi p en a ble con trol l ed

Symbol Alt Parameter M29W800D Unit

45 ns 70 ns 90 ns

tAVAV tWC Address Valid to Next Address Valid Min 45 70 90 ns

tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 0 ns

tELEH tCP Chip Enable Low to Chip Enable High Min 30 45 50 ns

tDVEH tDS Input Valid to Chip Enable High Min 25 45 50 ns

tEHDX tDH Chip Enable High to Input Transition Min 0 0 0 ns

tEHWH tWH Chip Enable High to Write Enable High Min 0 0 0 ns

tEHEL tCPH Chip Enable High to Chip Enable Low Min 30 30 30 ns

tAVEL tAS Address Valid to Chip Enable Low Min 0 0 0 ns

tELAX tAH Chip Enable Low to Address Transition Min 40 45 50 ns

tGHEL Output Enable High Chip Enable Low Min 0 0 0 ns

tEHGL tOEH Chip Enable High to Output Enable Low Min 0 0 0 ns

tEHRL (1) tBUSY Program/Erase Valid to RB Low Max 30 30 35 ns

tVCHWL tVCS VCC High to Write Enable Low Min 50 50 50 μs

1. Sampled only, not 100% tested.

M29W800DT, M29W800DB DC and AC parameters

33/52

Figu r e 14. R eset/b l o ck temp orary unprote ct AC waveform s

AI06870

RP tPLPX

tPHWL, tPHEL, tPHGL

tPLYH

tPHPHH

E, G

tRHWL, tRHEL, tRHGL

Table 15. Reset/block temporary unprotect AC characteristics

Symbol Alt Parameter M29W800D Unit

45 ns 70 ns 90 ns

tPHWL (1)

tPHEL

tPHGL (1)

tRH

RP High to Write Enable Low, Chip Enable

Low, Output Enable Low Min505050ns

tRHWL (1)

tRHEL (1)

tRHGL (1)

tRB

RB High to Write Enable Low, Chip Enable

Low, Output Enable Low Min000ns

tPLPX tRP RP pulse width Min 500 500 500 ns

tPLYH (1) tREADY RP Low to read mode Max 10 10 10 μs

tPHPHH (1) tVIDR RP rise time to VID Min 500 500 500 ns

1. Sampled only, not 100% tested.

Package mechanical data M29W800DT, M29W800DB

34/52

8 Package mechanical data

In order to meet environmental requirements, Numonyx offers these devices in RoHS

packages. These packages have a lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label.

Figure 15. SO44 – 44 lead plastic small outlin e, 525 mils body width, package outline

1. Drawing is not to scale.

SO-d

LA1 α

eCP

M29 W800DT , M29W 800DB P ackage mechanical data

35/52

Ta ble 16. SO44 – 44 lead plast i c small outlin e, 525 mils body width, pa ck age mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A 2.80 0.110

A1 0.10 0.004

A2 2.30 2.20 2.40 0.091 0.087 0.094

b 0.40 0.35 0.50 0.016 0.014 0.020

C 0.15 0.10 0.20 0.006 0.004 0.008

CP 0.08 0.003

D 28.20 28.00 28.40 1.110 1.102 1.118

E 13.30 13.20 13.50 0.524 0.520 0.531

EH 16.00 15.75 16.25 0.630 0.620 0.640

e 1.27 – – 0.050 – –

L 0.80 0.031

a8° 8°

N44 44

Package mechanical data M29W800DT, M29W800DB

36/52

Fig u re 16. T S OP48 – 48 lead p l astic th i n small o u tl ine, 12 x 20 mm , packag e outline

1. Drawing is not to scale.

TSOP-G

DIE

LA1

Table 17. TS OP48 – 48 lead p lasti c th in small ou tl ine, 12 x 20 mm , packag e mech an i cal da ta

Symbol millimeters inches

Typ Min Max Typ Min Max

A1.200.047

A1 0.10 0.05 0.15 0.004 0.002 0.006

A2 1.00 0.95 1.05 0.039 0.037 0.041

B 0.22 0.17 0.27 0.009 0.007 0.011

C 0.10 0.21 0.004 0.008

CP 0.08 0.003

D1 12.00 11.90 12.10 0.472 0.468 0.476

E 20.00 19.80 20.20 0.787 0.779 0.795

E1 18.40 18.30 18.50 0.724 0.720 0.728

e 0.50 – – 0.020 – –

L 0.60 0.50 0.70 0.024 0.020 0.028

L1 0.80 0.031

a3°0°5°3°0°5°

M29 W800DT , M29W 800DB P ackage mechanical data

37/52

Figure 17. TFBGA48 6x8mm – 6x8 ball array – 0.80mm pitch, bottom view package outline

1. Drawing is not to scale.

E1E

BGA-Z32

ddd

FE SD

BALL "A1"

Table 18. TFBGA48 6 x 8 mm – 6 x 8 active ball array – 0.80 mm pitch, package mechanical data

Symbol millimeters inches

Typ Min Max Typ Min Max

A1.200.047

A1 0.26 0.010

A2 0.90 0.035

b 0.35 0.45 0.014 0.018

D 6.00 5.90 6.10 0.236 0.232 0.240

D1 4.00 – – 0.157 – –

ddd 0.10 0.004

E 8.00 7.90 8.10 0.315 0.311 0.319

E1 5.60 – – 0.220 – –

e 0.80 – – 0.031 – –

FD 1.00 – – 0.039 – –

FE 1.20 – – 0.047 – –

SD 0.40 – – 0.016 – –

SE 0.40 – – 0.016 – –

Orde ri n g information M29W 800DT , M2 9W800 DB

38/52

9 Ordering information

Tabl e 19. Ordering information scheme

Note: For a list of available options (speed, package, etc.) or for further information on any aspect

of t hi s device, pl ease contact your nearest Numony x Sales Offic e.

Example: M29W800DB 90 N 6 T

Device type

M29

Operating voltage

W = VCC = 2.7 to 3.6 V

Device function

800D = 8-Mbit (x 8/x 16), boot block

Array matrix

T = top boot

B = bottom boot

Speed

45 = 45 ns

70 = 70 ns

90 = 90 ns

Package

M = SO44

N = TSOP48: 12 x 20 mm

ZE = TFBGA48: 6 x 8 mm, 0.80 mm pitch

Temperature range

6 = –40 to 85 °C

1 = 0 to 70 °C

Option

T = tape & reel packing

E = lead-free package, standard packing

F = lead-free package, tape & reel packing

M29W800DT, M29W800DB Block address table

39/52

Appendix A Block address table

Table 20. Top boot block ad d r esses, M2 9W800 DT

# Size (Kbyte s) Add ress range (x 8) Address r an g e (x 16)

18 16 FC000h-FFFFFh 7E000h-7FFFFh

17 8 FA000h-FBFFFh 7D000h-7DFFFh

16 8 F8000h-F9FFFh 7C000h-7CFFFh

15 32 F0000h-F7FFFh 78000h-7BFFFh

14 64 E0000h-EFFFFh 70000h-77FFFh

13 64 D0000h-DFFFFh 68000h-6FFFFh

12 64 C0000h-CFFFFh 60000h-67FFFh

11 64 B0000h-BFFFFh 58000h-5FFFFh

10 64 A0000h-AFFFFh 50000h-57FFFh

9 64 90000h-9FFFFh 48000h-4FFFFh

8 64 80000h-8FFFFh 40000h-47FFFh

7 64 70000h-7FFFFh 38000h-3FFFFh

6 64 60000h-6FFFFh 30000h-37FFFh

5 64 50000h-5FFFFh 28000h-2FFFFh

4 64 40000h-4FFFFh 20000h-27FFFh

3 64 30000h-3FFFFh 18000h-1FFFFh

2 64 20000h-2FFFFh 10000h-17FFFh

1 64 10000h-1FFFFh 08000h-0FFFFh

0 64 00000h-0FFFFh 00000h-07FFFh

Block address table M29W800DT, M29W800DB

40/52

Table 21. Bottom boot block addresses , M29W800 DB

# Size (Kbyte s) Add ress range (x 8) Address r an g e (x 16)

18 64 F0000h-FFFFFh 78000h-7FFFFh

17 64 E0000h-EFFFFh 70000h-77FFFh

16 64 D0000h-DFFFFh 68000h-6FFFFh

15 64 C0000h-CFFFFh 60000h-67FFFh

14 64 B0000h-BFFFFh 58000h-5FFFFh

13 64 A0000h-AFFFFh 50000h-57FFFh

12 64 90000h-9FFFFh 48000h-4FFFFh

11 64 80000h-8FFFFh 40000h-47FFFh

10 64 70000h-7FFFFh 38000h-3FFFFh

9 64 60000h-6FFFFh 30000h-37FFFh

8 64 50000h-5FFFFh 28000h-2FFFFh

7 64 40000h-4FFFFh 20000h-27FFFh

6 64 30000h-3FFFFh 18000h-1FFFFh

5 64 20000h-2FFFFh 10000h-17FFFh

4 64 10000h-1FFFFh 08000h-0FFFFh

3 32 08000h-0FFFFh 04000h-07FFFh

2 8 06000h-07FFFh 03000h-03FFFh

1 8 04000h-05FFFh 02000h-02FFFh

0 16 00000h-03FFFh 00000h-01FFFh

M29 W800DT , M29W 800DB Comm o n flash in terface (CFI )

41/52

Appendix B Common flash interface (CFI)

The common flash interface is a JEDEC approved, standardized data structure that can be

read from the flash memory device. It allows a system software to query the device to

determine various electrical and timing parameters, density information and functions

supported by the memory. The system can interface easily with the device, enabling the

software to upgrade itself when necessary.

When the CFI Query command is issued the device enters CFI query mode and the data

structure is read from the memory. Table 22, Table 23, Table 24, Table 25, Table 26 and

Table 27 show the addresses used to retrieve the data.

The CFI data structure also contains a security area where a 64-bit unique security number

is written (see Table 27: Security code area). This area can be accessed only in read mode

by the final user. It is impossible to change the security number after it has been written by

Numonyx. Issue a Read command to return to read mode.

Tabl e 22. Que ry stru cture overview (1)

1. Query data are always presented on the lowest order data outputs.

Address Sub-section name Description

x 16 x 8

10h 20h CFI query identification string Command set ID and algorithm data offset

1Bh 36h System interface information Device timing & voltage information

27h 4Eh Device geometry definition Flash device layout

40h 80h Primary algorithm-specific extended

query table

Additional information specific to the

primary algorithm (optional)

61h C2h Security code area 64-bit unique device number

Common flas h interf ace (CF I) M29W 800DT , M29W 800DB

42/52

Table 23. CFI query identification string(1)

1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

Address Data Description Value

x 16 x 8

10h 20h 0051h ‘Q’

11h 22h 0052h Query unique ASCII string ‘QRY’ ‘R’

12h 24h 0059h ‘Y’

13h 26h 0002h Primary algorithm command set and control interface ID

code 16-bit ID code defining a specific algorithm

AMD

compatible

14h 28h 0000h

15h 2Ah 0040h Address for primary algorithm extended query table (see

Table 26)P = 40h

16h 2Ch 0000h

17h 2Eh 0000h Alternate vendor command set and control interface ID

code second vendor - specified algorithm supported NA

18h 30h 0000h

19h 32h 0000h Address for alternate algorithm extended query table NA

1Ah 34h 0000h

Tabl e 24. CFI que ry system interface information

Address Data Description Value

x 16 x 8

1Bh 36h 0027h

VCC logic supply minimum program/erase voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 mV

2.7 V

1Ch 38h 0036h

VCC logic supply maximum program/erase voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 mV

3.6 V

1Dh 3Ah 0000h VPP [programming] supply minimum program/erase voltage NA

1Eh 3Ch 0000h VPP [programming] supply maximum program/erase voltage NA

1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n μs16μs

20h 40h 0000h Typical timeout for minimum size write buffer program = 2n μsNA

21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1 s

22h 44h 0000h Typical timeout for full chip erase = 2n ms (1)

1. Not supported in the CFI.

23h 46h 0004h Maximum timeout for byte/word program = 2n times typical 256 μs

24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA

25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical 8 s

26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical (1)

M29 W800DT , M29W 800DB Comm o n flash in terface (CFI )

43/52

Table 25. De vice geomet ry defi nitio n

Address Data Description Value

x 16 x 8

27h 4Eh 0014h Device size = 2n in number of bytes 1 Mbyte

28h

29h

50h

52h

0002h

0000h Flash device interface code description x 8, x 16

async.

2Ah

2Bh

54h

56h

0000h

Maximum number of bytes in multi-byte program or page =

2n NA

2Ch 58h 0004h

Number of erase block regions within the device.

It specifies the number of regions within the device

containing contiguous erase blocks of the same size.

2Dh

2Eh

5Ah

5Ch

0000h

Region 1 information

Number of identical size erase block = 0000h+1 1

2Fh

30h

5Eh

60h

0040h

0000h

Region 1 information

Block size in region 1 = 0040h * 256 bytes 16-Kbyte

31h

32h

62h

64h

0001h

0000h

Region 2 information

Number of identical size erase block = 0001h+1 2

33h

34h

66h

68h

0020h

0000h

Region 2 information

Block size in region 2 = 0020h * 256 bytes 8-Kbyte

35h

36h

6Ah

6Ch

0000h

Region 3 information

Number of identical size erase block = 0000h+1 1

37h

38h

6Eh

70h

0080h

0000h

Region 3 information

Block size in region 3 = 0080h * 256 byte 32-Kbyte

39h

3Ah

72h

74h

000Eh

0000h

Region 4 information

Number of identical-size erase block = 000Eh+1 15

3Bh

3Ch

76h

78h

0000h

0001h

Region 4 information

Block size in region 4 = 0100h * 256 byte 64-Kbyte

Common flas h interf ace (CF I) M29W 800DT , M29W 800DB

44/52

Table 26. Primary algorithm-specific e xtended query table

Address Data Description Value

x 16 x 8

40h 80h 0050h

Primary algorithm extended query table unique ASCII string

‘PRI’

‘P’

41h 82h 0052h ‘R’

42h 84h 0049h ‘I’

43h 86h 0031h Major version number, ASCII ‘1’

44h 88h 0030h Minor version number, ASCII ‘0’

45h 8Ah 0000h

Address sensitive unlock (bits 1 to 0)

00 = required, 01= not required

silicon revision number (bits 7 to 2)

Yes

46h 8Ch 0002h Erase suspend

00 = not supported, 01 = read only, 02 = read and write 2

47h 8Eh 0001h Block protection

00 = not supported, x = number of sectors in per group 1

48h 90h 0001h Temporary block unprotect

00 = not supported, 01 = supported Yes

49h 92h 0004h Block protect /unprotect

04 = M29W800D 4

4Ah 94h 0000h Simultaneous operations, 00 = not supported No

4Bh 96h 0000h Burst mode, 00 = not supported, 01 = supported No

4Ch 98h 0000h Page mode, 00 = not supported, 01 = 4 page word, 02 = 8

page word No

Tabl e 27. Security co de are a

Address Data Description

x 16 x 8

61h C3h, C2h XXXX

64-bit: unique device number

62h C5h, C4h XXXX

63h C7h, C6h XXXX

64h C9h, C8h XXXX

M29W800DT, M29W800DB Block protection

45/52

Appendix C Block protection

Block protection can be used to prevent any operation from modifying the data stored in the

Flash. Each block can be protected individually. Once protected, program and erase

operations on the block fail to change the data.

There are three techniques that can be used to control block protection, these are the

programmer technique, the in-system technique and temporary unprotection. Temporary

unprotection is controlled by the reset/block temporary unprotection pin, RP; this is

described in the Section 2: Signal descriptions.

Unlike the command interface of the program/erase controller, the techniques for protecting

and unprotecting blocks change between different Flash memory suppliers. For example,

the techniques for AMD parts will not work on Numonyx parts. Care should be taken when

changing drivers for one part to work on another.

C.1 Programmer technique

The programmer technique uses high (VID) voltage levels on some of the bus pins. These

cannot be achieved using a standard microprocessor bus, therefore the technique is

recommended only for use in programming equipment.

To protect a block follow the flowchart in Figure 18: Pr ogrammer eq ui pment bl ock protect

flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all

blocks can be unprotected at the same time. To unprotect the chip follow Figure 19:

Pr ogrammer eq ui pm ent chip unp rotect flowchart. Table 28: Program m er techniqu e bus

operations, B YTE = VIH or VIL, gives a summary of each operation.

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not abort the procedure before

reaching the end. Chip unprotect can take several seconds and a user message should be

provided to show that the operation is progressing.

C.2 In-system technique

The in-system technique requires a high voltage level on the reset/blocks temporary

unprotect pin, RP. This can be achieved without violating the maximum ratings of the

components on the microprocessor bus, therefore this technique is suitable for use after the

Flash has been fitted to the system.

To protect a block follow the flowchart in Figure 20: In -syst em equipm ent block protect

flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all

the blocks can be unprotected at the same time. To unprotect the chip follow Figu re 2 1: In-

sy st em equipment chip un protect flow chart.

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not allow the microprocessor to

service interrupts that will upset the timing and do not abort the procedure before reaching

the end. Chip unprotect can take several seconds and a user message should be provided

to show that the operation is progressing.

Block protect ion M29W 800D T , M2 9W800 DB

46/52

Ta ble 28. Programm er technique bus operations, BYTE = VIH or VIL

Operation E G W Address i nputs

A0-A18 Data inputs/ou tputs

DQ15A–1, DQ14-DQ0

Block protect VIL VID VIL pulse A9 = VID, A12-A18 block address

others = X X

Chip unprotect VID VID VIL pulse A9 = VID, A12 = VIH, A15 = VIH

others = X X

Block protection

verify VIL VIL VIH

A0 = VIL, A1 = VIH, A6 = VIL,

A9 = VID, A12-A18 block address

others = X

Pass = XX01h

Retry = XX00h

Block unprotection

verify VIL VIL VIH

A0 = VIL, A1 = VIH, A6 = VIH,

A9 = VID, A12-A18 block address

others = X

Retry = XX01h

Pass = XX00h

M29W800DT, M29W800DB Block protection

47/52

Figure 18. Programme r equipm ent block prot ect flowchart

ADDRESS = BLOCK ADDRESS

AI0346

G, A9 = VID,

E = VIL

n = 0

Wait 4µs

Wait 100µs

W = VIL

W = VIH

E, G = VIH,

A0, A6 = VIL,

A1 = VIH

A9 = VIH

E, G = VIH

++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

W = VIH

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

Verify Protect Set-upEnd

A9 = VIH

E, G = VIH

Block protect ion M29W 800D T , M2 9W800 DB

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Figure 19. Programmer equipment chip unprotect flowchart

PROTECT ALL BLOCKS

AI03470

A6, A12, A15 = VIH(1)

E, G, A9 = VID

DATA

W = VIH

E, G = VIH

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1, A6 = VIH

Wait 10ms

00h

INCREMENT

CURRENT BLOCK

n = 0

CURRENT BLOCK = 0

Wait 4µs

W = VIL

++n

= 1000

START

YES

YESNO

NO LAST

BLOCK

YES

E = VIL

Wait 4µs

G = VIL

Wait 60ns

Read DATA

FAIL PASS

Verify Unprotect Set-upEnd

A9 = VIH

E, G = VIH A9 = VIH

E, G = VIH

M29W800DT, M29W800DB Block protection

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Figure 20. In-syst em equipm ent block prot ect flowchart

AI0347

WRITE 60h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

n = 0

Wait 100µs

WRITE 40h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

RP = VIH ++n

= 25

START

FAIL

PASS

YES

DATA

01hYES

RP = VIH

Wait 4µs

Verify Protect Set-upEnd

READ DATA

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

WRITE 60h

ADDRESS = BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIL

Block protect ion M29W 800D T , M2 9W800 DB

50/52

Figure 21. I n-system equipment chip unprotect flowchart

AI03472

WRITE 60h

ANY ADDRESS WITH

A0 = VIL, A1 = VIH, A6 = VIH

n = 0

CURRENT BLOCK = 0

Wait 10ms

WRITE 40h

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIH

RP = VIH

++n

= 1000

START

FAIL PASS

YES

DATA

00h

YESNO

RP = VIH

Wait 4µs

READ DATA

ADDRESS = CURRENT BLOCK ADDRESS

A0 = VIL, A1 = VIH, A6 = VIH

RP = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

PROTECT ALL BLOCKS

INCREMENT

CURRENT BLOCK

LAST

BLOCK

YES

WRITE 60h

ANY ADDRESS WITH

A0 = VIL, A1 = VIH, A6 = VIH

Verify Unprotect Set-upEnd

M29W800DT, M29W800DB Revision history
 51/52
10 Revision history
         
         
Table 29. Document revision history
Date Version Changes
August 2001 1.0 First issue
03-Dec-2001 2.0
Block protection appendix added, SO44 drawing and package 
mechanical data updated, CFI Table 26, address 39h/72h data clarified, 
read/reset operation during erase suspend clarified
01-Mar-2002 3.0
Description of Ready/Busy signal clarified (and Figure 14 modified)
Clarified allowable commands during block erase
Clarified the mode the device returns to in the CFI Read Query command 
section
11-Apr-2002 4.0 Temperature range 1 added
Document promoted from preliminary data to full datasheet
31-Mar-2003 4.1
Erase suspend latency time (typical and maximum) and data retention 
parameters added to Tabl e 6: Program/eras e times and program/erase 
enduranc e cycles, and typical after 100k W/E cycles column removed. 
Minimum voltage corrected for 70 ns speed class in Ta bl e 9:  Op er ati n g 
and AC  measurement conditions.
Logic diagram and data toggle flowchart corrected.
Lead-free package options E and F added to Table 19: Orderin g 
information scheme.
13-Feb-2004 5
TSOP48 package outline and mechanical data updated.
TFBGA48 6 x 8 mm – 6 x 8 active ball array – 0.80 mm pitch added.
Table 9: Operating and AC measurement condi tions updated for 70 ns 
speed option.
23-Apr-2004 6 Figure 2: SO connec tions updated.
16-Sep-2004 7 45 ns speed class added.
21-Mar-2006 8 Removed TFBGA48 (ZA) (6 x 9 mm) package. Converted to new ST 
corporate template.
10-Dec-2007 9 Applied Numonyx branding.
25-Mar-2008 10 Minor text changes.
7-April-2009 11
Revised Chip Erase signal value (maximum) in Tab l e 6.: Pr og r am / e r a s e 
times and program/erase endurance cycles from 60 to 25 seconds.
Revised Block Erase (64-Kbytes) signal value (maximum) in Table 6.: 
Program/erase times and program/erase endurance cycles from 6 to 1.6 
seconds.

NAND128-A, NAND256-A

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