4N65G-TF1-T - Unisonic Technologies Co., Ltd.

UNISONIC TECHNOLOGIES CO., LTD

4N65 Power MOSFET

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4

A

, 650V N-CHANNEL

POWER MOSFET

 DESCRIPTION

The UTC 4N65 is a high voltage power MOSFET designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristic. This power MOSFET is usually used in high speed

switching applications including power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.

 FEATURES

* RDS(ON) = 2.5Ω @VGS = 10 V

* Ultra Low Gate Charge ( typical 15 nC )

* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

 SYMBOL

TO-251

1

TO-252

TO-220

TO-220F2

TO-262

1

TO-263

1

TO-220F

1

11

TO-220F1

 ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing

Lead Free Halogen Free 1 2 3

4N65L-TA3-T 4N65G-TA3-T TO-220 G D S Tube

4N65L- TF1-T 4N65G-TF1-T TO-220F1 G D S Tube

4N65L- TF2-T 4N65G-TF2-T TO-220F2 G D S Tube

4N65L- TF3-T 4N65G-TF3-T TO-220F G D S Tube

4N65L-TM3-T 4N65G-TM3-T TO-251 G D S Tube

4N65L-TN3-R 4N65G-TN3-R TO-252 G D S Tape Reel

4N65L-TN3-T 4N65G-TN3-T TO-252 G D S Tube

4N65L-T2Q-T 4N65G-T2Q-T TO-262 G D S Tube

4N65L-TQ2-R 4N65G-TQ2-R TO-263 G D S Tape Reel

4N65L-TQ2-T 4N65G-TQ2-T TO-263 G D S Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

4N65 Power M OSFET

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 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 650 V

Gate-Source Voltage VGSS ±30 V

Avalanche Current (Note2) IAR 4.4 A

Drain Current Continuous ID 4.0 A

Pulsed (Note2) IDM 16 A

Avalanche Energy

4N65

Single Pulsed (Note3)

EAS

260

mJ

4N65-E 200

4N65-N 260

4N65-Q 60

Repetitive (Note2) EAR 10.6 mJ

Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns

Power Dissipation

TO-220/TO-262/TO-263

PD

106

W

TO-220F/TO-220F1 36

TO-220F2 38

TO-251/ TO-252 50

Junction Temperature TJ +150 °С

Operating Temperature TOPR -55 ~ +150 °С

Storage Temperature TSTG -55 ~ +150 °С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

 THERMAL DATA

PARAMETER PACKAGE SYMBOL RATINGS UNIT

Junction to Ambient

TO-220/TO-262/TO-263

θJA

62.5

°С/W

TO-220F/TO-220F1 62.5

TO-220F2 62.5

TO-251/ TO-252 83

Junction to Case

TO-220/TO-262/TO-263

θJc

1.18

°С/W

TO-220F/TO-220F1 3.47

TO-220F2 3.28

TO-251/ TO-252 2.5

4N65 Power M OSFET

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 ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS V

GS = 0 V, ID = 250μA 650 V

Drain-Source Leakage Current IDSS V

DS = 650 V, VGS = 0 V 10 μA

Gate-Source Leakage Current Forward IGSS VGS = 30 V, VDS = 0 V 100 nA

Reverse VGS = -30 V, VDS = 0 V -100 nA

Breakdown Voltage Temperature Coefficient BV△DSS/△TJID=250μA, Referenced to 25°C 0.6 V/°С

ON CHARACTERISTICS

Gate Threshold Voltage VGS

(

TH

)

V

DS = VGS, ID = 250μA 2.0 4.0 V

Static Drain-Source On-State

Resistance

4N65

RDS(ON) V

GS = 10 V, ID = 2.2A

2.4 2.5

Ω

4N65-E 2.4 2.5

4N65-N 2.9 3.1

4N65-Q 2.9 3.1

DYNAMIC CHARACTERISTICS

Input Capacitance CISS VDS = 25 V, VGS = 0V,

f = 1MHz

520 670 pF

Output Capacitance COSS 70 90 pF

Reverse Transfer Capacitance CRSS 8 11 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time tD

(

ON

)

VDD = 325V, ID = 4.0A,

RG = 25Ω (Note 1, 2)

13 35 ns

Turn-On Rise Time

4N65

tR

70 100

ns

4N65-E 60 100

4N65-N 70 100

4N65-Q 45 100

Turn-Off Delay Time tD

(

OFF

)

25 60 ns

Turn-Off Fall Time

4N65

tF

100 120

ns

4N65-E 70 120

4N65-N 100 120

4N65-Q 35 120

Total Gate Charge QG VDS= 520V,ID= 4.0A,

VGS= 10V (Note 1, 2)

15 20 nC

Gate-Source Charge QGS 3.4 nC

Gate-Drain Charge QGD 7.1 nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage VSD V

GS = 0 V, IS = 4.4A 1.4 V

Maximum Continuous Drain-Source Diode

Forward Current IS 4.4 A

Maximum Pulsed Drain-Source Diode

Forward Current ISM 17.6 A

Reverse Recovery Time tr

r

VGS = 0V, IS = 4.4A,

dIF/dt = 100 A/μs (Note 1)

250 ns

Reverse Recovery Charge QRR 1.5 μC

Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

4N65 Power M OSFET

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 TEST CIRCUITS AND WAVEFORMS

Same Type

as D.U.T.

L

VDD

Driver

VGS

RG

-

VDS

D.U.T. +

* dv/dt controlled by RG

* ISD controlled by pulse period

* D.U.T.-Device Under Test

-

+

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

D=

VGS

(Driver)

ISD

(D.U.T.)

IFM, Body Diode Forward Current

di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode Forward Voltage Drop

VDD

10V

VDS

(D.U.T.)

VGS=

P.W.

Period

Peak Diode Recovery d v/dt Waveforms

4N65 Power M OSFET

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 TEST CIRCUITS AND WAVEFORMS (Cont.)

VGS

D.U.T.

RG

10V

VDS

RL

VDD

Pulse Width≤ 1μs

Duty Factor≤0.1%

Switching Test Circuit Switching Waveforms

Gate Charge Test Circuit Gate Charge Waveform

VDD

tpTime

BVDSS

IAS

ID(t) VDS(t)

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

4N65 Power M OSFET

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 TYPICAL CHARACTERISTICS

-100

Drain-Source Breakdown Voltage,

BVDSS (Normalized) (V)

Junction Temperature, TJ(°С)

-50 50 200

100 150

1.2

0

1.1

1.0

0.9

0.8

Note:

1. VGS=0V

2. ID=250µA

Breakdown Voltage Variation vs.

Temperature

-100

Drain-Source On-Resistance,

RDS(ON) (Normalized) (Ω)

Junction Temperature, TJ(°С)

-50 50 200

100 150

3.0

0

2.0

1.0

0.5

0.0

1.5

2.5

On-Resistance Junction Temperature

Note:

1. VGS=10V

2. ID=4A

10

1

100.1 1

Drain-to-Source Voltage, VDS (V)

On-State Characteristics

0.1

2

Gate-Source Voltage, VGS (V)

Transfer Characteristics

46 810

150°С

Notes:

1. VDS=50V

2. 250µs Pulse Test

10

1

0.1

25°С

5.0V

Notes:

1. 250µs Pulse Test

2. TC=25°С

VGS

Top: 10V

9V

8V

7V

6V

5.5V

5 V Bottorm:5.0V

4N65 Power M OSFET

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 TYPICAL CHARACTERISTICS(Cont.)

1200

0

0.1

Drain-SourceVoltage, VDS (V)

1000

200

110

Ciss

800

600

Notes:

1. VGS=0V

2. f = 1MHz

Ciss=Cgs+Cgd (Cds=shorted)

Coss=Cds+Cgd Crss=Cgd

Capacitance Characteristics

(Non-Repetitive)

0

Total Gate Charge, QG(nC)

515 25

Note: ID=4A

8

10

12

10

6

4

2

0

VDS=120V

VDS=300V

VDS=480V

20

Gate Charge Characteristics

Coss

Crss

400

Thermal Response, θJC (t)

PD(w)

4N65 Power M OSFET

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UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.