3875081 @ soLip state Ye Bet High-Speed Power [ransistors OO?LL? 3 I, +-33-/3 2N5038, 2N5039, 2N6496 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuits in industrial and Commercial Applications Features: = Maximum operating area curves for de and pulse operation = Isp-limit line beginning at 28 V High collector current rating High-dissipation capability RCA-2N5038, 2N5039 and 2N6496 are epitaxial silicon n-p-n planar transistors. They differ in breakdown-voltage ratings, leakage-current, and dc-beta values. The high current-handling capability of these transistors in conjunction with fast switching speeds make these devices especially suited for switching-control amplifiers, power gates, switching regulators, converters, and inverters. Other recommended applications include dc-rf amplifiers and power oscillators. These transistors are supplied in the JEDEC TO-204AA package. MAXIMUM RATINGS, Absolute-Maximum Values: *COLLECTOR-TO-BASE VOLTAGE .......--eerterere rere cttee Vcso 150 120 150 Vv COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With 1,5 volts (Vp_e} of reverse bias and external base-to-emitter resistance (Rg) = 100 LL ccc eects Vce_exisus}) 150 120 - Vv With Rpg S502 0c. eee cece etter eee eee ert rennet sees Vcer(sus) 110 95 130 Vv { With base open 0.66... cece eee eee eer n tener ee nens tes Vceolsus) 90 75 110 Vv EMITTER-TO-BASE VOLTAGE... .. cece cere reer reeereerctes VEBO 7 7 7 Vv *CONTINUOUS COLLECTOR CURRENT ....---- eee eeer recess lo 20 20 15 A *PEAK COLLECTOR CURRENT ......-.-------eeerereee erect 30 30 - A *CONTINUOUS BASE CURRENT ... 0.2... cree eter cere eee eeeeet Ip 5 5 5 A * TRANSISTOR DISSIPATION: Pr At case temperatures up to 25C'and VoE UP to 28 V ... eee eee ee 140 140 140 W At case temperature of 100C and Vop of 20V... 6. errr eee eens 80 80 80 Ww At case temperatures up to 25C and Vg above QB cc ccenccceee <a See Fig. 1._ At case temperatures above 25C and VE above ABV wi cce nce enee a See Figs. 1 & 2.> *TEMPERATURE RANGE: Storage & Operating (Junction) 2.6... 2... ec eee er eee rene tenes < _65to 200 _ C PIN TEMPERATURE (During Soldering) At distances > 1/32 in. (0.8 mm) from seating plane for 10s max. ... <__._ 230 _> C *1n accordance with JEDEC registration data format (JS-6, RDF-1) File Number 698 TERMINAL DESIGNATIONS c (FLANGE) 92CS-27516 JEDEC TO-204AA 2N5038 2N5039 2N6496* * * * * High Speed Power Transistors 2N5038, 2N5039, 2N6496 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 28C Unless Otherwise Specified TEST CONDITIONS LIMITS VOLTAGE CURRENT CHARACTERISTIC SYMBOL Vide Adc 2N5038 2N5039 2N6496 UNITS Vee |ce! Yea Vee| 'c te ig Min.| Max.| Min.| Max.) Min.) Max. Coltector Cutoff Current: \cEO 55 0 - - - 20 - - With base open 70 0 - 20 = - - - With base-emitte 0 18 7 _ ~ | 80 ~ 7 i | Fr I 140 -16 - 50 - = = = i i cEV Junction reverse-binsed 130 0 _ _ _ _ _ 20 mA At Tg = 150C 85 -15 -J-| -] wl] -j] - 100 15 - 10 - - - - 130 0 -}{ -]| -{ -| -| 2 Emitter Cutoff Current lego 5 Qo = 5 - 15 - - mA 7 Qo = 50 ~ 50 = 50 DC Forward-Current hee 5 2 50] 200| 30) 150] ~ Transfer Ratio 5 108 - - | 20{ 100} - - 5 12 20] 100} - - -~{|- 2 at - - - - 12 | 100 Magnitude of Small-Signal Forward-Current Transfer [tel 10 2 12| - 12] 12] - Ratio (At f = 5 MHzb Collector-to-Emitter Sustaining Voltage: With base open Vogoteusl 0.2 o | 90] - | 7] - | 110} - v With base-emitter junction reverse biased and} Vegxtsus) 15102 oliso| |r} - _ _ external base-to-emitter resistance (Reg) = 100 2 With Rpg <50 2 Vegptsus!? 0.2 o fio} - | a8} - }130] - Emitter-to-Base Voitage VeRO oO | 0.05 7 - 7 - 7 Vv v 5 108 - - - | 18 - _ Base-to-Emitter Vattage BE 5 124 - |18 - - - Vv 2 2 ~ = Ss = = [16 Collector-to-Emitter 108 1.0 - - - | 1.0 - - Saturation Voltage 12 12) 10] - - - Veglsat) v cen 208 s | -]25]-j25]- | - 33 08 - 7 = = - jo Base-to-Emitter Vertsath 208 5 133] - 733 ] -] - v Saturation Voltage BE 4 a8 - - - - - | 20 Output Capacitance Cop | 10 0 |400) - |400] - | 400 pF Second-Breakdown Collector Current Isnt 28 50 | [50 | - [50] - A (With base farward biased) 45 09 4,09 - {og - Second-Breakdown Energy {With base reverse biased, | Egyy! -4 | 12 wl - | 3] -]- 4] - mi Rg = 208, L = 180 nH} 4 8 - - - - [87 - Sat. Switching Rise Time Moon 10 10% | ~ - | 05 - - t 30V 12 12] - jos] -|]-]-]- 8 oe | = = = - | 05 Sat. Switching Storage Time Vec= 10 worP - ff - f - | PHP - ] Ke ts 30V 12 12} - 115 = - - - HS 8 ose] | ~ | - | - J - fits Sat. Switching Fall Time Mcc= 10 10} - - |05 - - 1, | gov 12 wei fos}-}] -|- | - 8 ose | - - - = - 105 Thermat Resistance unetion-to-Case) Rosc 10 10 ~ [125] [125] - | 1.25 cw 4 Pulsed; pulse duratian <350 ys, duty factor = 2%. > CAUTION: The sustaining voltages Vcgolsus}, VCer{sus). and Vcextsus! MUST NOT be measured on a curve tracer. ta, = lea= value shown, *tn accordance with JEDEC registration data format (15-6, ADF-1} 4 Igyp is defined as the current at which second breakdown occurs at 8 specified collector vaitage with the emitter-base junction forward- biased for transistor operation in the active region. Pulsed: 1-5 non-repetitive pulse. f Egyp is defined as the energy at which second breakdown occurs under specified reverse-bias conditions. Esp = %LI2 where L is a series foad or leakage inductance and [ is the peak collector current. cr 121 ee Sint eee ey inn ff ralHigh-Speed Power Transistors 2N5038, 2N5039, 2N6496 g {| CASE TEMPERATURE (To) = 25C (FOR Tc ABOVE 26, DERATE LIHEARLY) 6 0.05 4 | | ; . m7 To MAX. PULSED) _| PULSE OPERATION" | I t t Ig MAX. (CONTINUOUS) 10 nm COLLECTOR CURRENT (Ip)-A 1 3 + & | i FOR SINGLE NONREPETITIVE PULSE | N Veo MAK.= 75 1") 2 (2N5039) Voeo MAX.= 90 V Vv MAX=IIOV (2N5038) CEO on6496) 0.1 t 1. | J | 1 2 4 6 8 10 2 4 6 8 100} 2 4 6 8 1000 COLLECTOR-T0-EMITTER VOLTAGE (Ve) sess-a641Ri Fig. 1 Maximum operating areas for ail types. DISSIPATION-LIAITED PORTION AND I p LIMITED PORTICN OF MAXTRUM-OPERATING AREA-CURYVES DO NOT OERATE THE SPECI FIED VALUE FOR * vOL OF RATED PERCENTAGE OF MAXIMUM DISSIPATION AT 0 a 0 5 100 in CASE TEMPERATURE (Tg )C sass EFA} Fig. 2 Dissipation derating curves for all types. 1223875081 G E SOLID STATE Ob DE pse7soas Oouvbed 3 I 7-33-13 High Speed Power Transistors 2N5038, 2N5039, 2N6496 2N5039 COLLECTOR-TO-EMITTER VOLTAGE (VcE}= 15 | Tt CASE TEMPERATURE (T)= 25C i | oy * 1 Tp ' 2N6496 $05 6, z { i 7 ON : < o ay T i i L : rs Cam og = ! | : | | 2 on 5 ' | : ; | | : 5 2 1 i iyo | t t a 2 | , i z = : | t \ ? ! 8 E t +1 t + ! = Y | i | \t | 5 5 1 poi g 6 2 0 I la i , 4H 4 2 : fl por 4 = . : 8 i ' | i i ' Veo MAX? 75V(ZN5039 o Y i bT YGEQ MAX= S0 \ ! 1 it ray a | dy Li cat : 8 F410 1 8 3 9 COLLECTOR-T0-EMITTER VOLTAGE (VcEe)}V socs-z208 COLLECTOR CURRENT {1)-A asm Fig. 3 - Maximum operating areas for all types. Fig. 4 - Typical gain-bandwidth product for all types. CASE TEMPERATURE (Tc}+25C BASE SUPPLY VOLTAGE v CASE = BASE SERIES (Rad= 200 (NDUCTANCE (L}=200 in wn < e 2 ig c = 2 5 S 5 5 w i 3 8 o x < wi a PEAK COLLECTOR CURRENT A 3 2 3 0 10 Io INDUCTANCE (L] pH BASE SERIES RESISTANCE (RgI2 92CS"1S460 92CS-15464R1 Fig. & ~ Maximum reverse-bias, second-breakdown characteristics Fig. 6 - Maximum reverse-bias, second-breakdown characteristics for 2N5038 and 2N5039. for 2N5038 and 2N5039. CASE TEMPERATURE (Te. e258 CASE TEMPERATURE (To 42 25C BASE SERIES RESISTANCE (Ral+ 202 BASE SUPPLY VOLTAGE (Vagh+-4 | < !0 t | NN Lb INDUCTANCE (L)=200 pH E z w oe 2 oe s 2 S00nH & Ss & 8 750 ph F uo a 4 4 4 4 a a 4 o + oO 8 o % % a wl a g 2 : * 1000 ' INDUGTANCE [LIaH BASE SERIES RESISTANCE (Rg) 0 9zes-22799 9205-22503 Fig. 7 - Maximum reverse-bias, second-breakdown characteristics Fig. 8 - imum reverse-bias, d-breakd h istics for 2NG496. tor 2NG496. 123wre eve 3875081 G & SOLID STATE Gh DE Bserscsh CoLelel 5 I 7-33-13 High-Speed Power Transistors 2N5038, 2N5039, 2N6496 10-EMITTER VOLTAGE (Vcel* COLLECTOR -TO-EMITTER VOLTAGE (Vc_)=5V i a s E Zz w rE c s Oo ec 5 3 4 3 oO FOWARD-CURRENT TRANSFER RATIO (hee) ! to COLLECTOR CURRENT (Ip)A BASE-TO-EMITTER VOLTAGE (VgelV 92Ls-453 92cs-22791 Fig. 9 - Typical transfer characteristics for 2N5038. Fig. 10 - Typical de beta characteristics for 2N5038. COLLECTOR -TO-EMITTER VOLTAGE COLLECTOR-TO-EMITTER VOLTAGE ( #5 COLLECTOR CURRENT {Il-A OC FORWARD -CURRENT TRANSFER RATIO (hee) fo 15 2.0 30 aol I a0 BASETO-EMITTER VOLTAGE {Vge] COLLECTOR CURRENT (I,)A S2LS-1G 66Rt 92cs-22792 Fig. 11 - Typical transfer characteristics for 2N5039. Fig. 12 -Typical de beta characteristics for 2N5029. COLLECTOR-T0- EMITTER VOLTAGE (Veg=2 COLLECTOR CURRENT (T.1A DC FORWARD-CURRENT TRANSFER RATIO (hr) 0 0.5 15 2 25 3 eo 10 BASE-TO-EMITTER VOLTAGE (VgelV COLLECTOR CURRENT [Ic }A p2cs-22600 Fig. 13 - Typical transfer characteristics for 2N6496. 92CS-22798 Fig. 14 - Typical de beta characteristics for 2N6496. 403875081 G E SOLID STATE OL DE Baa7saa. ooze 7 J p-za-i3 High-Speed Power Transistors 2N5038, 2N5039, 2N6496 CASE TEMPERATURE (Tg) = 25C CASE TEMPERATURE (Tc) 25C Voer (sus) 1 Voeo (ust COLLECTOR CURRENTII )A on VOLTAGE, Voer (sus) MINIMUM COLLECTOR- lo IS 20 25 30 35 40 45 10 00 ik COLLECTOR-TO-EMITTER VOLTAGE (Voe)V EXTERNAL BASE-TO-EMITTER RESISTANCE (Ref sats-460 92s-22804 Fig. 15 - Typical output characteristics for 2N50238. Fig. 16 - Coltector-to-emitter sustaining voltage characteristic for all types. TO-EMITTER VOLTAGE (Voce) 4 CASE TEMPERATURE {To} = 25 C = n no a 3 a COLLECTOR CURRENT(Ic}A 3 BASE CURRENT (Ig) A a 2.0 25 =< 0 5 lo 15 20 25 30 05 1.0 35. 4045 BASE ~TO~EMITTER VOLTAGE (Vge) V COLLECTOR-TO-EMITTER VOLTAGE (Vop)-V S32LS-(465F2 92LS-1464 Fig. 17 - Typical output characteristics for 2N5039. Fig. 18 - Typical input characteristics for 2N5038 and 2N5039. CASE TEMPERATURE (Tg }# 25C COLLECTOR - 10- EMITTER VOLTAGE (Vc_}=2 / : ~ no m <. = ie 4 i < o H a L oO Z 8 s 5 5 i] 3 o ec = > 9 5 o w $ o 4 < a oOo oO o SASE CURRENT (Igh= 20 mA VOLT: WWeeh-v BASE-TO-EMITTER VOLTAGE (VgelV 92S -22802 2209-22601 Fig. 19 - Typical output characteristics for 2N6496. Fig. 20 - Typical input characteristics for 2N6496. 1253875081 G E SOLID STATE Ol DE fJ2875081 OOL?ie3 4 i 7-32-(3 High Speed Power Transistors 2N5038, 2N5039, 2N6496 CLARE MERCURY-RELAY E MODEL No. HGP-1004, CHANNEL A 4 OR EQUIVALENT DEVICE 8 UNDER 2 TEST To 5 HEWLETT-PACKARD = L OSCILLOSCOPE 200 MODEL No 130B, . 5In OR EQUIVALENT 6 0.5 W) O go 75 gi, 10 0 60 Vee pisus) CHANNEL B z Hz Ln 5 COLLECTOR -TO-EMITTER VOLTAGE (Wegi- 9268-36368 Voeo (sus? O.5W le LYcext! SoRMON The sustaining voltages (Vogg (sus), VoeR sus), end " Voexisush are acceptable when the traces fall to the ie 6v right of paint A for type 2NGO39, point B for 2 QTos50Vv type 2N5038 and paint C" for type 2NG496. L = 15mH for Veetsus) and | 500 mA (NOTE: 2N6496 is not tested for Veg (sust-) - CEO Yoenisus! measurements 92LS-1466R3 L = 2mH for Vcex (sus) measurements Fig. 21 - Circuit used to measure sustaining voltages Veeokusl. Fig. 22 - Osciiloscope display for measurement of sustaining voltages Vreplsus), and Vogx(susi. (Test circuit shown in Fig. 22). CER CEX' DURATION = 20 54 RATE 800 PULSES/SEG SUPPLY VOLTAGE (Vcc) = 90 = 45sec = 20a RATE 500 PULSES/SEC SUPPLY VOLTAGE (Yc) = 30 {Te} = 28C CURRENT saca-4a6a COLLECTOR (r sncs-tomas Fig. 23 - Typical rise-time and fall-time characteristics for all types. Fig. 24 - Typical storage time characteristic far all types. 0-+25 z+t30V O PULSE GENERATOR HEWLETT-PACKARD NO 214A, 5 OR EQUIVALENT z Tosti + 2 oO PULSE DURA- 3 TION 2 20 ms 4 REP. RATE ola a kHz ~ 6 Pe of Ri (NON-INDUGTIVE) = ae 2.52,12W FOR tc 2A 35 | 329,12W FOR Ig 210A 3750, 8W FOR I=8A 92cs-22376 -4T0 -6V . Fig. 26 Phase rela tionship between input and output currents 92acs-22377R showing reference points for specification of switching Fig. 26 - Circuit used to measure switching times for all types. times. (Test circuit shawn in Fig. 26). 126