NSV45030T1G - ON SEMICONDUCTOR - Datasheet.Directory

June, 2015 − Rev. 5 1Publication Order Number:

NSI45030/D

NSI45030T1G, NSV45030T1G

Constant Current Regulator

& LED Driver

45 V, 30 mA + 15%, 460 mW Package

The linear constant current regulator (CCR) is a simple, economical

and robust device designed to provide a cost−effective solution for

regulating current in LEDs (similar to Constant Current Diode, CCD).

The CCR is based on Self-Biased Transistor (SBT) technology and

regulates current over a wide voltage range. It is designed with a

negative temperature coefficient to protect LEDs from thermal

runaway at extreme voltages and currents.

The CCR turns on immediately and is at 25% of regulation with

only 0.5 V Vak. It requires no external components allowing it to be

designed as a high or low−side regulator. The high anode-cathode

voltage rating withstands surges common in Automotive, Industrial

and Commercial Signage applications. The CCR comes in thermally

robust packages and is qualified to AEC-Q101 standard, and

UL94−V0 certified.

Features

•Robust Power Package: 460 mW

•Wide Operating Voltage Range

•Immediate Turn-On

•Voltage Surge Suppressing − Protecting LEDs

•SBT (Self−Biased Transistor) Technology

•Negative Temperature Coefficient

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Automobile: Chevron Side Mirror Markers, Cluster, Display &

Instrument Backlighting, CHMSL, Map Light

•AC Lighting Panels, Display Signage, Decorative Lighting, Channel

Lettering

•Switch Contact Wetting

•Application Note AND8391/D − Power Dissipation Considerations

•Application Note AND8349/D − Automotive CHMSL

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Anode−Cathode Voltage Vak Max 45 V

Reverse Voltage VR500 mV

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

ESD Rating: Human Body Model

Machine Model ESD Class 1C

Class B

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

AG = Device Code

M = Date Code

G= Pb−Free Package

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SOD−123

CASE 425

STYLE 1

MARKING DIAGRAM

AG M G

Device Package Shipping†

ORDERING INFORMATION

NSI45030T1G SOD−123

(Pb−Free) 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Anode 2

Cathode 1

Ireg(SS) = 30 mA

@ Vak = 7.5 V

NSV45030T1G* SOD−123

(Pb−Free) 3000/Tape & Reel

NSI45030T1G, NSV45030T1G

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Steady State Current @ Vak = 7.5 V (Note 1) Ireg(SS) 25.5 30 34.5 mA

Voltage Overhead (Note 2) Voverhead 1.8 V

Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) 30.3 36.4 42.5 mA

Capacitance @ Vak = 7.5 V (Note 4) C 2.5 pF

Capacitance @ Vak = 0 V (Note 4) C 5.7 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 1 oz. Copper traces, in still air.

2. Voverhead = Vin − VLEDs. Voverhead is typical value for 75% Ireg(SS).

3. Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.

4. f = 1 MHz, 0.02 V RMS.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 5) TA = 25°C

Derate above 25°CPD208

1.66 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 600 °C/W

Thermal Reference, Lead−to−Ambient (Note 5) RψLA 404 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 5) RψJL 196 °C/W

Total Device Dissipation (Note 6) TA = 25°C

Derate above 25°CPD227

1.8 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 6) RθJA 550 °C/W

Thermal Reference, Lead−to−Ambient (Note 6) RψLA 390 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 6) RψJL 160 °C/W

Total Device Dissipation (Note 7) TA = 25°C

Derate above 25°CPD347

2.8 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 360 °C/W

Thermal Reference, Lead−to−Ambient (Note 7) RψLA 200 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 7) RψJL 160 °C/W

Total Device Dissipation (Note 8) TA = 25°C

Derate above 25°CPD368

2.9 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 340 °C/W

Thermal Reference, Lead−to−Ambient (Note 8) RψLA 208 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 8) RψJL 132 °C/W

Total Device Dissipation (Note 9) TA = 25°C

Derate above 25°CPD436

3.5 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 287 °C/W

Thermal Reference, Lead−to−Ambient (Note 9) RψLA 139 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 9) RψJL 148 °C/W

Total Device Dissipation (Note 10) TA = 25°C

Derate above 25°CPD463

3.7 mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 270 °C/W

Thermal Reference, Lead−to−Ambient (Note 10) RψLA 150 °C/W

Thermal Reference, Junction−to−Cathode Lead (Note 10) RψJL 120 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

5. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

6. FR−4 @ 100 mm2, 2 oz. copper traces, still air.

7. FR−4 @ 300 mm2, 1 oz. copper traces, still air.

8. FR−4 @ 300 mm2, 2 oz. copper traces, still air.

9. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

10.FR−4 @ 500 mm2, 2 oz. copper traces, still air.

NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.

Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical

measurements and method of attachment.

NSI45030T1G, NSV45030T1G

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TYPICAL PERFORMANCE CUR VES

Minimum FR−4 @ 300 mm2 1 oz Copper Trace, Still Air

Figure 1. General Performance Curve for CCR Figure 2. Steady State Current (Ireg(SS)) vs.

Anode−Cathode Voltage (Vak)

Figure 3. Pulse Current (Ireg(P)) vs.

Anode−Cathode Voltage (Vak) Figure 4. Steady State Current vs. Pulse

Current Testing

Vak, ANODE−CATHODE VOLTAGE (V) Ireg(P), PULSE CURRENT (mA)

109.08.07.06.05.04.0

403938363534

Ireg(P), PULSE CURRENT (mA)

Ireg(SS), STEADY STATE CURRENT (mA)

37 43

41 42

Non−Repetitive Pulse Test

3.0 25

Vak @ 7.5 V

TA = 25°C

Figure 5. Current Regulation vs. Time

TIME (s)

3025201050

Ireg, CURRENT REGULATION (mA)

15 35

Vak @ 7.5 V

TA = 25°C

Figure 6. Power Dissipation vs. Ambient

Temperature @ TJ = 1505C

TA, AMBIENT TEMPERATURE (°C)

8060200−20−40

200

300

500

PD, POWER DISSIPATION (mW)

500 mm2/2 oz

500 mm2/1 oz

300 mm2/1 oz

400

100

100 mm2/1 oz 100 mm2/2 oz

300 mm2/2 oz

600

800

700

323130 33

Vak, ANODE−CATHODE VOLTAGE (V)

403020 60100−10

−20

Ireg, CURRENT REGULATION (mA)

−10

Vak, ANODE−CATHODE VOLTAGE (V)

96543

Ireg(SS), STEADY STATE CURRENT (mA)

710

DC Test Steady State, Still Air

TA = −40°C

TA = 25°C

TA = 85°C

[ −0.073 mA/°C

typ @ Vak = 7.5 V

[ −0.059 mA/°C

typ @ Vak = 7.5 V

210

NSI45030T1G, NSV45030T1G

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APPLICATIONS INFORMATION

The CCR is a self biased transistor designed to regulate the

current through itself and any devices in series with it. The

device has a slight negative temperature coefficient, as

shown in Figure 2 – Tri Temp. (i.e. if the temperature

increases the current will decrease). This negative

temperature coefficient will protect the LEDS by reducing

the current as temperature rises.

The CCR turns on immediately and is typically at 20% of

regulation with only 0.5 V across it.

The device is capable of handling voltage for short

durations of up to 45 V so long as the die temperature does

not exceed 150°C. The determination will depend on the

thermal pad it is mounted on, the ambient temperature, the

pulse duration, pulse shape and repetition.

Single LED String

The CCR can be placed in series with LEDs as a High Side

or a Low Side Driver. The number of the LEDs can vary

from one to an unlimited number. The designer needs to

calculate the maximum voltage across the CCR by taking the

maximum input voltage less the voltage across the LED

string (Figures 7 and 8).

Figure 7.

Figure 8.

Higher Current LED Strings

Two or more fixed current CCRs can be connected in

parallel. The current through them is additive (Figure 9).

Figure 9.

NSI45030T1G, NSV45030T1G

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Other Currents

The adjustable CCR can be placed in parallel with any

other CCR to obtain a desired current. The adjustable CCR

provides the ability to adjust the current as LED efficiency

increases to obtain the same light output (Figure 10).

Figure 10.

Dimming using PWM

The dimming of an LED string can be easily achieved by

placing a BJT in series with the CCR (Figure 11).

Figure 11.

The method of pulsing the current through the LEDs is

known as Pulse Width Modulation (PWM) and has become

the preferred method of changing the light level. LEDs being

a silicon device, turn on and off rapidly in response to the

current through them being turned on and off. The switching

time is in the order of 100 nanoseconds, this equates to a

maximum frequency of 10 Mhz, and applications will

typically operate from a 100 Hz to 100 kHz. Below 100 Hz

the human eye will detect a flicker from the light emitted

from the LEDs. Between 500 Hz and 20 kHz the circuit may

generate audible sound. Dimming is achieved by turning the

LEDs on and off for a portion of a single cycle. This on/off

cycle is called the Duty cycle (D) and is expressed by the

amount of time the LEDs are on (Ton) divided by the total

time of an on/off cycle (Ts) (Figure 12).

Figure 12.

The current through the LEDs is constant during the period

they are turned on resulting in the light being consistent with

no shift i n chromaticity (color). The b rightness is i n proportion

to the percentage of time that the LEDs are turned on.

Figure 13 i s a t ypical response o f L uminance vs Duty C ycle.

Figure 13. Luminous Emmitance vs. Duty Cycle

DUTY CYCLE (%) 10

908070605040

1000

3000

ILLUMINANCE (lx)

2000

4000

6000

20100

5000

Lux

Linear

Reducing EMI

Designers creating circuits switching medium to high

currents need to be concerned about Electromagnetic

Interference (EMI). The LEDs and the CCR switch

extremely fast, less than 100 nanoseconds. To help eliminate

EMI, a capacitor can be added to the circuit across R2.

(Figure 11) This will cause the slope on the rising and falling

edge on the current through the circuit to be extended. The

slope of the CCR on/off current can be controlled by the

values of R1 and C1.

The selected delay / slope will impact the frequency that

is selected to operate the dimming circuit. The longer the

delay, the lower the frequency will be. The delay time should

not be less than a 10:1 ratio of the minimum on time. The

frequency is also impacted by the resolution and dimming

steps that are required. With a delay of 1.5 microseconds on

the rise and the fall edges, the minimum on time would be

30 microseconds. If the design called for a resolution of 100

dimming steps, then a total duty cycle time (Ts) of 3

milliseconds or a frequency of 333 Hz will be required.

NSI45030T1G, NSV45030T1G

www.onsemi.com

Thermal Considerations

As power in the CCR increases, it might become

necessary to provide some thermal relief. The maximum

power dissipation supported by the device is dependent

upon board design and layout. Mounting pad configuration

on the PCB, the board material, and the ambient temperature

affect the rate of junction temperature rise for the part. When

the device has good thermal conductivity through the PCB,

the junction temperature will be relatively low with high

power applications. The maximum dissipation the device

can handle is given by:

PD(MAX) +TJ(MAX) *TA

RqJA

Referring to the thermal table on page 2 the appropriate

RqJA for the circuit board can be selected.

AC Applications

The CCR is a DC device; however , it can be used with full

wave rectified AC as shown in application notes

AND8433/D and AND8492/D and design notes

DN05013/D and DN06065/D. Figure 14 shows the basic

circuit configuration.

Figure 14. Basic AC Application

NSI45030T1G, NSV45030T1G

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PACKAGE DIMENSIONS

SOD−123

CASE 425−04

ISSUE G

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 1:

PIN 1. CATHODE

2. ANODE

1.22

0.048

ÉÉ

0.91

0.036

2.36

0.093

4.19

0.165

ǒmm

inchesǓ

SCALE 10:1

ÉÉ

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ÂÂÂÂ

DIM MIN NOM MAX

MILLIMETERS INCHES

A0.94 1.17 1.35 0.037

A1 0.00 0.05 0.10 0.000

b0.51 0.61 0.71 0.020

1.60

0.15

0.055D1.40 1.80

E2.54 2.69 2.84 0.100

---

3.68 0.140

L0.25

3.86

0.010

0.046

0.002

0.024

0.063

0.106

0.145

0.053

0.004

0.028

0.071

0.112

0.152

MIN NOM MAX

3.56

---

--- ---

0.006

--- ---

q00

10 10

°°° °

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