Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DAN217
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type. (SMD3)
2) High reliability.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50Ω
Capacitance between terminals
Reverse recovery time
Parameter Conditions
Forward voltage
Reverse current
Storage temperature 55 to 150
Power dissipation 200
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) 4
Reverse voltage (DC) 80
Forward current (Single) 300
Parameter Limits
Reverse voltage (repetitive peak) 80
SMD3
1.0MIN.
0.8MIN.
2.4
0.95
1.9
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
1.35±0.1
3.2±0.1
φ1.05MIN
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
ROHM : SMD3
JEITA : SC-59
weekcode
JEDEC :S0T-346
0.4
＋0.1
－0.06
2.9±0.2
2.8±0.2
1.9±0.2
1.6
＋0.2
－0.1
0.95 0.95
＋0.1
－0.05
各リードとも
同寸法
0～0.1
0.15
1.1±0.2
0.01
0.8±0.1
(2) (1)
(3)
0.3～0.6
Each lead has same dimension
1/2 2011.06 - Rev.B
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DAN217
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 100
0
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
0.1
1
10
0 5 10 15 20
f=1MHz
900
910
920
930
940
950
AVE:921.7mV
Ta=25℃
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=80V
n=10pcs
AVE:9.655nA
0
1
2
3
4
5
6
7
8
9
10
AVE:1.17pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:3.50A
0
1
2
3
4
5
1 10 100
1
10
100
0.1 1 10 100
0
1
2
3
4
5
6
7
8
9
10
AVE:0.97kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:2.54kV
8.3ms
Ifsm 1cyc
8.3ms
Ifsm
1cyc
8.3ms
t
Ifsm
1ms
IM=1mA IF=10mA
300us
time
ｶﾞﾗｽｴﾎﾟｷｼ基板実装時
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
1ms
IM=100mA IF=10A
300us
time
Mounted on epoxy board
2/2 2011.06 - Rev.B
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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