Rev.3.00 Aug 10, 2005 page 1 of 7
2SC3127
Silicon NPN Epitaxial REJ03G0711-0300
(Previous ADE-208-1080A )
Rev.3.00
Aug.10.2005
Application
UHF/VHF wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1
2
3
1. Emitter
2. Base
3. Collecto
r
Note: Marking for 2SC3127 is “ID–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 20 V
Collector to emitter voltage VCEO 12 V
Emitter to base voltage VEBO 3 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
2SC3127
Rev.3.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V(BR)CBO 20 — — V IC = 10 µA, IE = 0
Collector to emitter breakdo wn voltage V(BR)CEO 12 — — V IC = 1 mA, RBE = ∞
Emitter cutoff current IEBO — — 10 µA VEB = 3 V, IC = 0
Collector cutoff current ICBO — — 0.5 µA VCB = 12 V, IE = 0
DC current transfer ratio hFE 30 90 200 VCE = 5 V, IC = 20 mA
Collector output capacitanc e Cob — 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT 3.5 4.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 2.2 — dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
2SC3127
Rev.3.00 Aug 10, 2005 page 3 of 7
Main Characteristics
Maximum Collector Dissipation Curve
300
200
100
0 50 100 150 200
Ambient Temperature Ta (°C)
Collector Power Dissipation Pc (mW)
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
12 51020 50100
0
40
80
120
160
200
DC Current Transfer Ratio h
FE
V
CE
= 5 V
Gain Bandwidth Product vs.
Collector Current
0
1.0
2.0
3.0
4.0
5.0
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
12 51020 50
V
CE
= 5 V
f = 500 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0
0.4
0.8
1.2
1.6
2.0
12 51020 50
f = 1 MHz
I
E
= 0
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
0
0.4
0.8
1.2
1.6
2.0
12 51020 50
Reverse Transfer Capacitance vs.
Collector to Base Voltage
f = 1 MHz
Emitter Common
Power Gain and Noise Figure vs.
Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
Collector Current I
C
(mA)
0
4
8
12
16
20
0 1020304050
V
CE
= 5 V
f = 500 MHz
PG
NF
2SC3127
Rev.3.00 Aug 10, 2005 page 4 of 7
Power Gain and Noise Figure vs.
Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
Collector Current IC (mA)
2
4
6
8
10
12
0 1020304050
V
CE
= 5 V
f = 900 MHz
PG
NF
2nd I.M. Distortion 2nd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
01020304050
2nd I.M. Distortion vs. Collector Current
V
CC
= 12 V
f
1
= 210 MHz, f
2
= 200 MHz
V
out
= 100 dBµ
f
2nd
= 410 MHz
2nd I.M. Distortion 2nd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
0 1020304050
2nd I.M. Distortion vs. Collector Current
V
CC
= 12 V
f
1
= 600 MHz, f
2
= 650 MHz
V
out
= 100 dBµ
f
2nd
= 1,250 MHz
3rd I.M. Distortion 3rd I.M.D. (dB)
Collector Current IC (mA)
30
40
50
60
70
80
0 1020304050
3rd I.M. Distortion vs. Collector Current
V
CC
= 12 V
f
1
= 210 MHz, f
2
= 200 MHz
V
out
= 100 dBµ
f
3rd
= 190 MHz, 220 MHz
f = 190 MHz
f = 220 MHz
3rd I.M. Distortion 3rd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
0 1020304050
3rd I.M. Distortion vs. Collector Current
V
CC
= 12 V
f
1
= 600 MHz, f
2
= 650 MHz
V
out
= 100 dBµ
f
3rd
= 550 MHz, 700 MHz
f = 550 MHz
f = 700 MHz
2SC3127
Rev.3.00 Aug 10, 2005 page 5 of 7
Noise Figure vs. Frequency
Noise Figure NF (dB)
Frequency f (MHz)
0
2
4
6
8
10
400 500 600 700 800 900
NF
Post AMP. NF
V
CC
= 12 V
I
C
= 20 mA
Power Gain vs. Frequency
Power Gain PG (dB)
Frequency f (MHz)
0
2
4
6
8
10
1,000750500250
V
CC
= 12 V, I
C
= 20 mA
Input Power Level
–50 dBm
Power Gain vs. Frequency
Power Gain PG (dB)
Frequency f (MHz)
0
2
4
6
8
10
1,000750500250
V
CC
= 12 V
Input Power Level
–50 dBm
I
C
= 30 mA
I
C
= 20 mA
I
C
= 10 mA
I
C
= 5 mA
2SC3127
Rev.3.00 Aug 10, 2005 page 6 of 7
Input and Output Reflection Coefficient vs. Frequency
Input and Output Reflection Coefficient
S
11
&S
22
(dB)
Frequency f (MHz)
–20
–10
0
–15
1,000750500250
0
–5
V
CC
= 12 V, I
C
= 20 mA
Input Power Level
–50 dBm
S
22
S
11
Vhf to Uhf Wide Band Amp. Circuit
47050 p
50 p
2.4 k
50 p 5 p
1,200 p Output
Input
Rg = 50 Ω
L
1
L
2
T
1
R
L
= 50 Ω
1.2 p
4,400 p
4,400 p
2,200 p
110
V
BB
V
CC
2.5 p
Unit R : Ω
C : F
Parts Spcecification
L
1
: Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns.
L
2
: Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns.
T
1
: Balance wind used Ferrite Core
Outside dia φ4.0 mm, Inside dia φ2.0 mm
φ0.1 mm Polyurethane Coated Copper wire 3 Turns.
Ratio Input to Output is 2 : 1
2SC3127
Rev.3.00 Aug 10, 2005 page 7 of 7
Package Dimensions
D
eA
AA
b
xSA
M
EH
E
A
A
2
A
1
S
b
A-A Section
b
1
c
1
c
Qc
LL
1
L
P
A
3
Pattern of terminal position areas
I
1
b
2
e
e
1
A
A
1
A
2
A
3
b
b
1
c
c
1
D
E
e
H
E
L
L
1
L
P
x
b
2
e
1
I
1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Min Nom
Dimension in Millimeters
Reference
Symbol
Max
1.1
0.25
0.42
0.4
0.13
0.11
1.5
0.95
2.8
1.95
0.3
1.3
0.1
1.2
0.5
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.05
SC-59A 0.011g
MASS[Typ.]
MPAK(T) / MPAK(T)V,
MPAK / MPAKV
PLSP0003ZB-A
RENESAS CodeJEITA Package Code Package Name
Ordering Information
Part Name Quantity Shipping Container
2SC3127ID-TL-E 3000 φ 178 mm Reel, 8 mm Emboss Taping
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