MJ900, MJ901 PNP (suicon) MJ1000, MJ1001 NPN 8.0 AMPERE MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON . . . for use as output devices in complementary general purpose amplifier applications. 60-80 VOLTS 90 WATTS @ High OC Current Gain he gE = 6000 (Typ) @ Ic = 3.0 Adc @ Monolithic Construction with Built-In Base-Emitter Shunt Resistors MAXIMUM RATINGS . MJ900 | MJ901 . Rating Symbol MJ1000 | 451001 Unit Collector-Emitter Voltage VcEO 60 80 Vde Collector-Base Voltage Vee 60 80 Vde Emitter-Base Voltage Ves 5.0 Vde Collector Current Ic 8.0 Adc Base Current Ig 0.1 Adc Total Device Dissipation @ Tc = 25C Po 90 Watts A Derate above 25C 0.515 wc 8~ rc Operating and Storage Junction Ty. T stg -55 to +200 C 4 : Temperature Range tr an E tL fi THERMAL CHARACTERISTICS SEATING o Characteristic Symbol Max Unit F Thermal Resistance, Junction to Case aI5C 1.94 [cw I Qa we: iy yO" v7 , PONT ks FIGURE 1 DARLINGTON CIRCUIT SCHEMATIC STYLE 1: PIN 1, BASE 2. EMITTER NOTE: CASE: COLLECTOR 1. DIM Q" {S DIA. Collector Collector NPN MJ1000 MS1O04 Emitter Emitter 386 CASE 11-03