APTGF20X60E2
APTGF20X60E2(P2) – Rev 0 November, 2003
APT website – http://www.advancedpower.com
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 500µA
600
V
T
j
= 25°C 1 500 µA
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 600V T
j
= 125°C 1 mA
T
j
= 25°C 2.0 2.5
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 20A T
j
= 125°C 2.2 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 0.5mA 3 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 400 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 1100
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz 70 pF
T
d(on)
Turn-on Delay Time 45
T
r
Rise Time 23
T
d(off)
Turn-off Delay Time 107
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 20A
R
G
= 27Ω 18
ns
T
d(on)
Turn-on Delay Time 47
T
r
Rise Time 24
T
d(off)
Turn-off Delay Time 125
T
f
Fall Time 21
ns
E
off
Turn off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 20A
R
G
= 27Ω
0.38 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.25 1.6
V
F
Diode Forward Voltage I
F
= 20A
V
GE
= 0V T
j
= 125°C 1.2 V
E
R
Reverse Recovery Energy I
F
= 20A
V
R
= 300V
di/dt =800A/µs T
j
= 125°C 0.43 mJ
T
j
= 25°C 1.4
Q
rr
Reverse Recovery Charge I
F
= 20A
V
R
= 300V
di/dt =800A/µs
T
j
= 125°C 2.4 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 1
R
thJC
Junction to Case Diode 1.5 °C/W
V
ISOL
RMS Isolation Voltage, an
y terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 2 3.5 N.m
Wt Package Weight 185 g