ITT SEMICOND/ INTERMNETALL 61E D MM 4682711 O003ee3 545 MISI ZMY1...ZMY100 (1W) Silicon Planar Power Zener Diodes Cathode Mark for use in stabilizing and clipping circuits with high power rating. - The Zener voltages are graded according to the international TT E 24 standard. Smaller voltage tolerances on request. * l+ D4 5102 o Glass case MELF ++ 2a These diodes are also available in DO-41 case with the type designation ZPY1 ... ZPY100. Weight approx. 0.25 g Dimensions in mm These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings | Symbol Value Unit Zener Current see Table Characteristics Power Dissipation at Tamp = 25 C Prot 11) Ww Junction Temperature Tj 175 C Storage Temperature Range Ts 55to +175 C 1) Valid provided that electrodes are kept at ambient temperature. Characteristics at Tapp = 25 C | Symbol Min. Typ. Max. Unit Thermal Resistance Rha - - 1701) K/W Junction to Ambient Air | Valid provided that electrodes are kept at ambient temperature. 162 ITT SEMICOND/ INTERMETALL bLE D WM 4682711 0003224 411 MBISI ZMY1...ZMY100 (1W) Type Zener Dynamic Temp. coeff. Test Reverse Admissible voltage resistance of Zener volt. current voltage Zener current at at at at at |; test piest lz test Ip =O5pA Tamp = 25C V2V ry 0 oyz 104/K lz test mA Va V IpmA zMy1* 0.65 ... 0.75 6.5 (<8) 26 ... 23 5 - 406 ZMY3,9 3.7 ...4.1 4 (<7) 7...42 100 - 203 ZMY4,3 4.0...46 4 (<7) 7...4+3 100 - 182 ZMY4,7 4.4...5.0 4 (<7) -7...+4 100 - 165 ZMY5,1 4.8 ...5.4 2 (<5) 6...4+5 100 >0.7 150 ZMY5,6 5.2...6.0 1 (<2) 3...45 100 >1.5 135 ZMY6,2 5.8 ...6.6 1 (<2) -1...4+6 100 >2.0 128 ZMY6,8 6.4... 7.2 1 (<2) 0...+7 100 >3.0 110 ZMY7,5 7.0...7.9 1 (<2) 0.47 100 >5.0 100 ZMY8,2 7.7 ...8.7 1 (<2) +3...48 100 >6.0 89 ZMY9,1 8.5...9.6 2 (<4) +3...4+8 50 >7.0 82 ZMY10 9.4...10.6 2 (<4) +5...49 50 >7.5 74 ZMY11 10.4...11.6 3 (<7) +5...410 50 >8.5 66 ZMY12 11.4...12.7 3 (<7) +5...4+10 50 >9.0 60 ZMY13 12.4...14.1 4 (<9) +5...4+10 50 >10 55 ZMY15 13.8 ...15.8 4 (<9) +5... +10 50 >11 49 ZMY16 15.3 ...17.1 5 (<10) +7...+11 25 >12 44 ZMY18 16.8... 19.1 5 (<11) +7...411 25 >14 40 ZMY20 18.8 ...21.2 6 (<12) +7...411 25 >15 36 ZMY22 20.8 ... 23.3 7 (<138) +7 ...411 25 >17 34 ZMY24 22.8 ...25.6 8 (<14) +7...412 25 >18 29 ZMY27 25.1 ... 28.9 9 (<15) +7...412 25 >20 27 ZMY30 28 ... 32 10 (<20) +7 ...412 25 >22.5 25 ZMY33 31...35 11 (<20) +7...4+12 25 >25 22 ZMY36 34... 38 25 (<60) +7...4+12 10 >27 20 ZMY39 37...41 30 (<60) +8...412 10 >29 18 ZMY43 40... 46 35 (<80) +8...413 10 >32 17 ZMY47 44 ...50 40 (<80) +8...418 10 >35 15 ZMY51 48 ... 54 45 (<100) +8...413 10 >38 14 ZMY56 52 ... 60 50 (<100) +8...413 10 >42 13 ZMY62 58 ... 66 60 (<130) +8...418 10 >47 11 ZMY68 64... 72 65 (<130) +8...413 10 >51 10 ZMY75 70... 79 70 (<160) +8...413 10 >56 9 ZMY82 77 ... 88 80 (<160) +8...413 10 >61 8 ZMY91 85 ...96 120 (<250) +9... 413 5 >68 7.5 ZMY100 94... 106 130 (<250) +9...413 5 >75 7 1 Valid provided that electrodes are kept at ambient temperature. ) Tested with pulses tp = 20 ms. ) The ZMY1 is a silicon diode operated in forward direction. Hence, the index of all characteristics and maximum ratings should be F instead of 'Z. Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dissipation see types ZMU100 ... ZMU180. 163 ITT SEMICOND/ INTERMETALL SLE D MM 4YbS2711 0003225 358 MISTI ZMY1...ZMY100 (1W) Breakdown characteristics T, = constant (pulsed) mA 240 ZMY3,9 200 160 Test Current Iz ZMY8,2 120 | WOmA 80 Breakdown characteristics T, = constant (pulsed) mA ZMY15 ZMY18 ZMY22 Test Current Jz 25mA 164 TTT SEMTCOND/ INTERMETALL BLE D MM 4682711 0003226 294 MIST ZMY1...ZMY100 (1W) Breakdown characteristics T, = constant (pulsed) mA ZMY. 7, =25C ZMY56 Iz ZMY68 ZMY82 Test Current Iz | 10mA ZMY100 10 RP HY -]-]-|-I4 - 4 r | | | 5mA { | I on ee eee ee ; ] J 0 50 100 150 200 V _ Vz Admissible power dissipation Pulse thermal resistance versus ambient temperature versus pulse duration Valid provided that electrodes Valid provided that electrodes are kept at ambient temperature are kept at ambient temperature Ww ZMY... K/W ZMY... 1.0 \ Rot 08 \ \ 06 \ \ 04 \ \ 02 \ 0 0 100 200C Tamb 165 ITT SEMICOND/ INTERMETALL 61E ZMY1... ZMY100 (1W) 4b8e?11 OOO3ee7? 1eO MISSI Dynamic resistance versus Zener current Qj 10 yn ww eu 1 2 345 7 40 2 345 100 mA 2 Dynamic resistance versus Zener current ZMY ... ZMY100 ZMY82 ZMY68 ZMY56 ZMY43 0) 2 3 45 1 2 3 45 10mMA _Y I, Dynamic resistance versus Zener current 2 ZMY ... 1 23925 JO 2 345 100mA _ 166